Manufacture | Part Number | Description | |
RF Micro Devices |
RF5288 | RF5288 3.0V TO 3.6V, DUAL-BAND FRONT-END MODULE Pa | |
Shunye |
BZV55C2V4 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C2V7 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C3V0 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C3V3 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C3V6 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C3V9 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C4C3 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C4V7 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C5V1 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C5V6 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C6V2 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C6V8 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C7V5 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C8V2 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C9V1 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C10 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C11 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C12 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C13 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C15 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C16 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C18 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C20 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C22 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C24 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C27 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C30 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C33 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C36 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C39 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C43 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C47 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C51 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C56 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C62 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C68 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C75 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C82 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C91 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C100 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C110 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C120 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C130 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C150 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C160 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C180 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Shunye |
BZV55C188 | 0.020(0.5) 0.012(0.3) BZV55C/ZMM55C-SERIES ZENER | |
Omron |
M2C | Indicator Indicator with Cylindrical 20-mm × 12-d | |
Omron |
M2CJ-90A1 | Indicator Indicator with Cylindrical 20-mm × 12-d | |
Omron |
M2CA-90A1 | Indicator Indicator with Cylindrical 20-mm × 12-d | |
Omron |
M2CT-90A1 | Indicator Indicator with Cylindrical 20-mm × 12-d | |
Sanyo |
A1624 | Ordering number : 3 1 0 3 A 2SA1624 PNP Epitaxia | |
International Rectifier |
IRS21171 | February 18, 2009 IRS211(7,71,8)(S) SINGLE CHANNE | |
International Rectifier |
IRS2117 | February 18, 2009 IRS211(7,71,8)(S) SINGLE CHANNE | |
International Rectifier |
IRS2118 | February 18, 2009 IRS211(7,71,8)(S) SINGLE CHANNE | |
International Rectifier |
IRS21171S | February 18, 2009 IRS211(7,71,8)(S) SINGLE CHANNE | |
International Rectifier |
IRS2117S | February 18, 2009 IRS211(7,71,8)(S) SINGLE CHANNE | |
International Rectifier |
IRS2118S | February 18, 2009 IRS211(7,71,8)(S) SINGLE CHANNE | |
StarChips |
SCT2026 | StarChips Technology SCT2026 V02_01; Jan/08 16-b | |
Infineon |
BA895-02V | Silicon PIN Diode • Current-controlled RF resist | |
RF Micro Devices |
RF5322 | RF5322 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER A | |
RF Micro Devices |
RF5325 | RF5325 3.3V, 2.4GHZ 802.11b/g/n WIFI FRONT END MOD | |
RF Micro Devices |
RF5345 | RF5345 2.4GHz TO 2.5GHz, 802.11b/g/n WiFi FRONT EN | |
RF Micro Devices |
RF5355 | RF5355 3.3V, 5GHz LINEAR POWER AMPLIFIER Package S | |
RF Micro Devices |
RF5375 | RF5375 2.4GHz to 2.5GHz, 802.11b/g/n WiFi Front En | |
RF Micro Devices |
RF5385 | RF5385 2.4GHz to 2.4GHz 802.11b/g/n WiFi Front End | |
RF Micro Devices |
RF5501 | RF5501 3.3V, SWITCH AND LNA FRONT END SOLUTION Pac | |
RF Micro Devices |
RF5510 | ProposedRF551011b/g WLAN SP3T Switch RF5510 11B/G | |
RF Micro Devices |
RF5511 | Proposed RF5511 3.3V, SWITCH AND LNA FRONT END SO | |
RF Micro Devices |
RF5521 | RF5521 3.3V, SWITCH AND LNA FRONT END MODULE Packa | |
RF Micro Devices |
RF5611 | RF5611 3.3V, SWITCH AND LNA FRONT END SOLUTION Pac | |
RF Micro Devices |
RF5506 | RF5506 5.15GHz TO 5.85GHz 802.11a/n FRONT END MODU | |
RF Micro Devices |
RF5515 | RF5515 4.9GHz to 5.85GHz Low Noise Amplifier with | |
RF Micro Devices |
RF5516 | RF5516 5.15GHz TO 5.85GHz 802.11a/n FRONT END MODU | |
RF Micro Devices |
RF5565 | RF5565 2.4GHz TO 2.5GHz, 802.11b/g/n WiFi FRONT EN | |
RF Micro Devices |
RF5601 | RF5601 4.9GHz to 5.85GHz Low Noise Amplifier with | |
RF Micro Devices |
RF5603 | RF56033.0 V to 5.0V, 3.3GHz to 3.8GHz Linear Power | |
RF Micro Devices |
RF5604 | RF56045 V, 475MHz to 625MHz FEM RF5604 5V, 475MH | |
RF Micro Devices |
RF5616 | RF5616 3.0V TO 5.0V, 5GHz LINEAR POWER AMPLIFIER P | |
RF Micro Devices |
RF5632 | RF5632Single 5.0V, 2.3 to 2.7 GHz Linear Power Amp | |
RF Micro Devices |
RF5633 | RF5633Single 5.0V, 3.3 to 3.8GHz Linear Power Ampl | |
RF Micro Devices |
RF5652 | RF56525.0 V, 2.4GHz to 2.7GHz High Power Amplifier | |
RF Micro Devices |
RF5722 | RF5722 3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER | |
Rohm |
RQ3E100BN | RQ3E100BN Nch 30V 21A Power MOSFET VDSS RDS | |
Rohm |
RQ3E120BN | RQ3E120BN Nch 30V 21A Power MOSFET D | |
Rohm |
RQ3E130BN | RQ3E130BN Nch 30V 13A Middle Power MOSFET V | |
Rohm |
RQ3E150BN | RQ3E150BN Nch 30V 15A Middle Power MOSFET V | |
Rohm |
RQ3E180AJ | RQ3E180AJ Nch 30V 18A Middle Power MOSFET V | |
Rohm |
RQ5A030AP | RQ5A030AP Pch -12V -3A Middle Power MOSFET | |
Rohm |
RQ5E030AJ | RQ5E030AJ Nch 30V 3A Middle Power MOSFET VD | |
Rohm |
RQ5E040AJ | RQ5E040AJ Nch 30V 4A Middle Power MOSFET VD | |
Rohm |
RQ5L015SP | RQ5L015SP Pch -60V -1.5A Small Signal MOSFE | |
Rohm |
RQ6E030AT | RQ6E030AT Pch -30V -3.0A Small Signal MOSFET | |
Rohm |
RQ6E035AT | RQ6E035AT Pch -30V -3.5A Power MOSFET VDSS | |
Rohm |
RQ6E055BN | RQ6E055BN Nch 30V 5.5A Power MOSFET VDSS RD | |
Rohm |
RQ7E055AT | RQ7E055AT Pch -30V -5.5A Middle Power MOSFET | |
Rohm |
RS1E200BN | RS1E200BN Nch 30V 68A Power MOSFET D | |
Rohm |
RS1E240BN | RS1E240BN Nch 30V 40A Middle Power MOSFET V | |
Rohm |
RS1E280BN | RS1E280BN Nch 30V 80A Middle Power MOSFET V | |
Rohm |
RS3E075AT | RS3E075AT Pch -30V -7.5A Middle Power MOSFET | |
Rohm |
RSX051VYM30FH | RSX051VYM30FH Schottky Barrier Diode (AEC-Q101 q | |
Rohm |
RSX201VAM30 | Schottky Barrier Diode RSX201VAM30 Data Sheet lA | |
Rohm |
RUS100N02 | RUS100N02 Nch 20V 10A Middle Power MOSFET V | |
Rohm |
SH8K41 | SH8K41 80V Nch+Nch Middle MOSFET VDSS RDS(o | |
Central Semiconductor |
TIP29 | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (63 | |
Central Semiconductor |
TIP29A | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (63 | |
Central Semiconductor |
TIP29B | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (63 | |
Central Semiconductor |
TIP29C | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (63 | |
Fortune Semiconductor |
FS8205A | REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFo | |
CanSheng Industry |
FS8205A | ShenZhen CanSheng Industry Development Co.,Ltd. ww | |
GigaDevice |
GD32F130F4P6 | GigaDevice Semiconductor Inc. GD32F130xx ARM® Cor | |
GigaDevice |
GD32F130G4U6 | GigaDevice Semiconductor Inc. GD32F130xx ARM® Cor | |
GigaDevice |
GD32F130G6U6 | GigaDevice Semiconductor Inc. GD32F130xx ARM® Cor | |
GigaDevice |
GD32F130G8U6 | GigaDevice Semiconductor Inc. GD32F130xx ARM® Cor | |
GigaDevice |
GD32F130C4T6 | GigaDevice Semiconductor Inc. GD32F130xx ARM® Cor | |
GigaDevice |
GD32F130C6T6 | GigaDevice Semiconductor Inc. GD32F130xx ARM® Cor | |
GigaDevice |
GD32F130C8T6 | GigaDevice Semiconductor Inc. GD32F130xx ARM® Cor | |
GigaDevice |
GD32F130R8T6 | GigaDevice Semiconductor Inc. GD32F130xx ARM® Cor | |
Panasonic |
C4004 | Power Transistors 2SC4004 Silicon NPN triple diffu | |
Motorola |
GM338 | GM338/GM398 Mobile Radios Basic Service Manual 680 | |
Motorola |
GM398 | GM338/GM398 Mobile Radios Basic Service Manual 680 | |
UTC |
UTC7106 | UTC 7106 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) PARAME | |
Microchip |
MCP14E9 | MCP14E9/10/11 3.0A Dual High-Speed Power MOSFET Dr | |
Microchip |
MCP14E10 | MCP14E9/10/11 3.0A Dual High-Speed Power MOSFET Dr | |
Microchip |
MCP14E11 | MCP14E9/10/11 3.0A Dual High-Speed Power MOSFET Dr | |
Silergy |
SY5810 | Applications Note: SY5810 Single Stage Flyback And | |
Toshiba |
RN1112F | RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Ep | |
Toshiba |
RN1113F | RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Ep | |
Central Semiconductor |
CMNTVS5V0 | CMNTVS5V0 SURFACE MOUNT SILICON UNI-DIRECTIONAL 5. | |
Central Semiconductor |
CQ202-4B-2 | CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 4.0 AM | |
Central Semiconductor |
CQ202-4D-2 | CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 4.0 AM | |
Central Semiconductor |
CQ202-4M-2 | CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 4.0 AM | |
Central Semiconductor |
CQ202-4N-2 | CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 4.0 AM | |
Central Semiconductor |
CQ220-12B | CQ220-12B CQ220-12D CQ220-12M CQ220-12N 12 AMP TRI | |
Central Semiconductor |
CQ220-12D | CQ220-12B CQ220-12D CQ220-12M CQ220-12N 12 AMP TRI | |
Central Semiconductor |
CQ220-12M | CQ220-12B CQ220-12D CQ220-12M CQ220-12N 12 AMP TRI | |
Central Semiconductor |
CQ220-12N | CQ220-12B CQ220-12D CQ220-12M CQ220-12N 12 AMP TRI | |
Central Semiconductor |
CQ220-8B | CQ220-8B CQ220-8D CQ220-8M CQ220-8N 8.0 AMP TRIAC | |
Central Semiconductor |
CQ220-8D | CQ220-8B CQ220-8D CQ220-8M CQ220-8N 8.0 AMP TRIAC | |
Central Semiconductor |
CQ220-8M | CQ220-8B CQ220-8D CQ220-8M CQ220-8N 8.0 AMP TRIAC | |
Central Semiconductor |
CQ220-8N | CQ220-8B CQ220-8D CQ220-8M CQ220-8N 8.0 AMP TRIAC | |
Central Semiconductor |
CQ92B | CQ92B CQ92D CQ92M CQ92N TRIAC 1.0 AMP, 200 THRU 80 | |
Central Semiconductor |
CQ92D | CQ92B CQ92D CQ92M CQ92N TRIAC 1.0 AMP, 200 THRU 80 | |
Central Semiconductor |
CQ92M | CQ92B CQ92D CQ92M CQ92N TRIAC 1.0 AMP, 200 THRU 80 | |
Central Semiconductor |
CQ92N | CQ92B CQ92D CQ92M CQ92N TRIAC 1.0 AMP, 200 THRU 80 | |
Central Semiconductor |
CS18B | CS18B CS18D CS18M CS18N SILICON CONTROLLED RECTIFI | |
Central Semiconductor |
CS18D | CS18B CS18D CS18M CS18N SILICON CONTROLLED RECTIFI | |
Central Semiconductor |
CS18M | CS18B CS18D CS18M CS18N SILICON CONTROLLED RECTIFI | |
Central Semiconductor |
CS18N | CS18B CS18D CS18M CS18N SILICON CONTROLLED RECTIFI | |
RF Micro Devices |
DKFC2071 | RFFC2071 RFFC2071/2072 2.7GHz RF SYNTHESIZER/VCO | |
RF Micro Devices |
DKFC2072 | RFFC2071 RFFC2071/2072 2.7GHz RF SYNTHESIZER/VCO | |
RF Micro Devices |
DKFC5061 | RFFC5061/62 Wideband Synthesizer/VCO with Integrat | |
RF Micro Devices |
DKFC5062 | RFFC5061/62 Wideband Synthesizer/VCO with Integrat | |
Diodes |
DMP2130L | Features Low RDS(ON): 75 m @VGS = -4.5V | |
Diodes |
DMP3160L | DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Produc | |
Diodes |
DMP4047SK3 | NEW PRODUCT DMP4047SK3 40V P-CHANNEL ENHANCEMENT | |
Diodes |
DMP4047SSD | NEW PRODUCT DMP4047SSD 40V DUAL P-CHANNEL ENHANCE | |
Diodes |
DMP4065S | DMP4065S 40V P-CHANNEL ENHANCEMENT MODE MOSFET Pr | |
Diodes |
DMP6023LE | ADVANCE INFORMATION Green DMP6023LE 60V P-CHA | |
Diodes |
DMP6023LFG | ADVANCE INFORMATION DMP6023LFG 60V P-CHANNEL ENHA | |
Diodes |
DMP6023LSS | ADVANCE INFORMATION DMP6023LSS 60V P-CHANNEL ENHA | |
Diodes |
DMP6050SSD | N EN EWWP RPORDOUDCUTC T DMP6050SSD 60V DUAL P-CH | |
Diodes |
DMP6110SSD | NEW PRODUCT DMP6110SSD P-CHANNEL ENHANCEMENT MODE | |
Diodes |
DMP6110SSS | NEW PNREOWDUPCRTODUCT DMP6110SSS 60V P-CHANNEL EN | |
Diodes |
DMP6180SK3 | NEW PRODUCT DMP6180SK3 60V P-CHANNEL ENHANCEMENT | |
Diodes |
DMP6185SE | NAEDWVPARNOCDEUICNTF O R M A T I O N DMP6185SE Gr | |
Diodes |
DMP6185SK3 | DMP6185SK3 60V P-CHANNEL ENHANCEMENT MODE MOSFET | |
Diodes |
DMP6250SE | NAEDWVPARNOCDEUICNTF O R M A T I O N Product Summ | |
Diodes |
DMS2085LSD | ADVANCE INFORMATION DMS2085LSD P-CHANNEL ENHANCEM | |
Diodes |
DMS2095LFDB | NEW PRODUCT Product Summary V(BR)DSS -20V VR 20V | |
Diodes |
DMS3012SFG | DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET W | |
Diodes |
DMS3016SSSA | DMS3016SSSA N-CHANNEL ENHANCEMENT MODE MOSFET WITH | |
Diodes |
DMT3008LFDF | ADVA NAECDEWVDAPINRNCOFEDOIURNCMFTAOTRIMOANTION P | |
Diodes |
DMT5015LFDF | NOT RECOMMENDED FOR NEW DESIGN CONTACT US DMT5015 | |
Diodes |
DMT6008LFG | ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT DMT6008LF | |
Diodes |
DMT6010LFG | ADVANCE INNEFWORPRMOADTIUOCNT DMT6010LFG 60V N-CH | |
Diodes |
DMT6016LFDF | Product Summary BVDSS 60V RDS(ON) Max 16mΩ @ V | |
Diodes |
DMT6016LPS | DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET P | |
Diodes |
DMT6016LSS | A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT | |
Diodes |
DMT8012LFG | ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT DMT8012LF | |
Linear |
LTC2265-14 | LTC2265-14/ LTC2264-14/LTC2263-14 14-Bit, 65Msps/ | |
Linear |
LTC2264-14 | LTC2265-14/ LTC2264-14/LTC2263-14 14-Bit, 65Msps/ | |
Linear |
LTC2263-14 | LTC2265-14/ LTC2264-14/LTC2263-14 14-Bit, 65Msps/ | |
Linear |
LTC2415 | FEATURES LTC2415/LTC2415-1 24-Bit No Latency ∆� | |
Linear |
LTC2415-1 | FEATURES LTC2415/LTC2415-1 24-Bit No Latency ∆� | |
Linear |
LTC3114-1 | LTC3114-1 FEATURES 40V, 1A Synchronous Buck-Boos | |
Linear |
LTC3129-1 | LTC3129-1 15V, 200mA Synchronous Buck-Boost DC/DC | |
Linear |
LTC3553-2 | LTC3553-2 FEATURES Micropower USB Power Manager | |
Linear |
LTC3554-1 | LTC3554/LTC3554-1/ LTC3554-2/LTC3554-3 Features | |
Linear |
LTC3554 | LTC3554/LTC3554-1/ LTC3554-2/LTC3554-3 Features | |
Linear |
LTC3554-2 | LTC3554/LTC3554-1/ LTC3554-2/LTC3554-3 Features | |
Linear |
LTC3554-3 | LTC3554/LTC3554-1/ LTC3554-2/LTC3554-3 Features | |
Linear |
LTC3586-2 | LTC3586-2/LTC3586-3 FEATURES High Efficiency USB | |
Linear |
LTC3586-3 | LTC3586-2/LTC3586-3 FEATURES High Efficiency USB | |
Linear |
LTC3786 | FEATURES n Synchronous Operation For Highest Effic | |
Linear |
LTC3789 | LTC3789 Features n Single Inductor Architecture | |
Linear |
LTC3807 | LTC3807 Low IQ, Synchronous Step-Down Controller w | |
Linear |
LTC3816 | LTC3816 Features Single-Phase Wide VIN Range DC/ | |
Silergy |
SY8805A | Applications Note: AN_SY8805A High Efficiency 1 MH | |
Infineon |
BAR67-04 | Silicon PIN Diode • For low loss RF switches and | |
Infineon |
BAR90-02ELS | Silicon Deep Trench PIN Diodes • Optimized for l | |
Infineon |
BAR90-02EL | Silicon Deep Trench PIN Diodes • Optimized for l | |
Infineon |
BBY51-02L | Silicon Tuning Diode • High Q hyperabrupt tuning | |
Infineon |
BBY51-02V | Silicon Tuning Diode • High Q hyperabrupt tuning | |
Infineon |
BBY51-02W | Silicon Tuning Diode • High Q hyperabrupt tuning | |
Infineon |
BBY51-03W | Silicon Tuning Diode • High Q hyperabrupt tuning | |
Infineon |
BBY52-02L | Silicon Tuning Diodes • Ηigh Q hyperabrupt tuni | |
Infineon |
BBY52-02W | Silicon Tuning Diodes • Ηigh Q hyperabrupt tuni | |
Infineon |
BBY53-02L | Silicon Tuning Diode • High Q hyperabrupt tuning | |
Infineon |
BBY53-02V | Silicon Tuning Diode • High Q hyperabrupt tuning | |
Infineon |
BBY53-02W | Silicon Tuning Diode • High Q hyperabrupt tuning | |
Infineon |
BBY53-03W | Silicon Tuning Diode • High Q hyperabrupt tuning | |
Infineon |
BBY53-05W | Silicon Tuning Diode • High Q hyperabrupt tuning | |
Infineon |
BBY55-02V | Silicon Tuning Diodes • Excellent linearity • | |
Infineon |
BBY55-02W | Silicon Tuning Diodes • Excellent linearity • | |
Infineon |
BBY55-03W | Silicon Tuning Diodes • Excellent linearity • | |
Infineon |
BBY56-02V | Silicon Tuning Diode • Excellent linearity • L | |
Infineon |
BBY56-02W | Silicon Tuning Diode • Excellent linearity • L | |
Infineon |
BBY56-03W | Silicon Tuning Diode • Excellent linearity • L | |
Infineon |
BBY57-02L | Silicon Tuning Diode • Excellent linearity • H | |
Infineon |
BBY57-02V | Silicon Tuning Diode • Excellent linearity • H | |
Infineon |
BBY57-02W | Silicon Tuning Diode • Excellent linearity • H | |
Infineon |
BBY57-05W | Silicon Tuning Diode • Excellent linearity • H | |
Infineon |
BBY58-02L | Silicon Tuning Diodes • Excellent linearity • | |
Infineon |
BBY58-02V | Silicon Tuning Diodes • Excellent linearity • | |
Infineon |
BBY58-02W | Silicon Tuning Diodes • Excellent linearity • | |
Infineon |
BBY58-03W | Silicon Tuning Diodes • Excellent linearity • | |
Infineon |
BBY58-05W | Silicon Tuning Diodes • Excellent linearity • | |
Infineon |
BBY58-06W | Silicon Tuning Diodes • Excellent linearity • | |
Infineon |
BBY65-02V | Silicon Tuning Diode • High Q hyperabrupt tuning | |
Infineon |
BBY66-02V | Silicon Tuning Diodes • High capacitance ratio | |
Infineon |
BBY66-05 | Silicon Tuning Diodes • High capacitance ratio | |
Infineon |
BBY66-05W | Silicon Tuning Diodes • High capacitance ratio | |
Infineon |
BB857-02V | Silicon Tuning Diode • For SAT tuners • High c |
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