Manufacture | Part Number | Description | |
DSI |
1N3941B | Technical Data DIODE maximum ratings Voltage, Re | |
uPI Semiconductor |
uP1712 | uP1712 1MHz, 3.0A, High-Efficiency Synchronous-R | |
Infineon |
1EBN1001AE | EiceDRIVER™ Boost Booster for Automotive Applica | |
Micropac Industries |
4N47BU | 4N47BU 4N48BU 4N49BU 08/05/2014 JAN, JANTX, JANTX | |
Micropac Industries |
4N48BU | 4N47BU 4N48BU 4N49BU 08/05/2014 JAN, JANTX, JANTX | |
Micropac Industries |
4N49BU | 4N47BU 4N48BU 4N49BU 08/05/2014 JAN, JANTX, JANTX | |
Infineon |
BFP780 | BFP780 200 mW High Gain RF Driver Amplifier Data S | |
Infineon |
BSC0500NSI | BSC0500NSI MOSFET OptiMOSTM5Power-MOSFET,30V F | |
Infineon |
BSC0503NSI | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
BSC0504NSI | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
BSC050N03LSG | OptiMOS™3 Power-MOSFET Features • Fast switchi | |
Infineon |
BSC050N03MSG | BSC050N03MS G OptiMOS™3 M-Series Power-MOSFET | |
Infineon |
BSC050N04LSG | OptiMOS™3 Power-Transistor Features • Fast swi | |
Infineon |
BSC050NE2LS | BSC050NE2LS MOSFET OptiMOSTMPower-MOSFET,25V F | |
Infineon |
BSC0501NSI | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
BSC0502NSI | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
BSZ0500NSI | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
BSZ0502NSI | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
ESD101-B1-02 | ESD101-B1-02 Series Protection device TVS (transie | |
Infineon |
ESD5V5U5ULC | TVS Diodes Transient Voltage Suppressor Diodes ESD | |
Infineon |
GTVA221701FA | advance specification GTVA221701FA advance specif | |
Infineon |
GTVA220701FA | advance specification GTVA220701FA advance specif | |
Infineon |
GTVA261701FA | advance specification GTVA261701FA advance specif | |
Infineon |
IDW20G65C5B | SiC Silicon Carbide Diode 5th Generation thinQ!TM | |
Infineon |
IDW24G65C5B | SiC Silicon Carbide Diode 5th Generation thinQ!TM | |
Infineon |
IDW32G65C5B | SiC Silicon Carbide Diode 5th Generation thinQ!TM | |
Infineon |
IDW40G65C5B | SiC Silicon Carbide Diode 5th Generation thinQ!TM | |
Infineon |
IPA60R190P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPW60R190P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB60R190P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPP60R190P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPA60R230P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPW60R230P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB60R230P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPP60R230P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPA60R380P6 | IPB60R380P6,IPP60R380P6,IPD60R380P6, IPA60R380P6 | |
Infineon |
IPB60R380P6 | IPB60R380P6,IPP60R380P6,IPD60R380P6, IPA60R380P6 | |
Infineon |
IPP60R380P6 | IPB60R380P6,IPP60R380P6,IPD60R380P6, IPA60R380P6 | |
Infineon |
IPD60R380P6 | IPB60R380P6,IPP60R380P6,IPD60R380P6, IPA60R380P6 | |
Infineon |
IPA60R600P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB60R600P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPP60R600P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPD60R600P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB17N25S3-100 | OptiMOS™-T Power-Transistor Features • N-chann | |
Infineon |
IPP17N25S3-100 | OptiMOS™-T Power-Transistor Features • N-chann | |
Infineon |
IPB64N25S3-20 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon |
IPP60R280P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPW60R280P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB60R280P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPA60R280P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPP60R330P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPW60R330P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB60R330P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPA60R330P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPS65R600E6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPW60R160P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB60R160P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPP60R160P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPA60R160P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPZ60R041P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPZ60R040C7 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPZ60R099C7 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPZ65R019C7 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPZ65R045C7 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPZ60R070P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPZ60R099P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPZ60R125P6 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
DSI |
1N3941G-M | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
1N3941G | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
1N3942-M | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
1N3942 | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
1N3942B | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
1N3942G-M | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
1N3942G | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
1N3997A-SEL | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
1N3997A | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
1N3997RA | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
1N5617 | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
1N5811-M | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
2N2222A-M | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
2N2907A-M | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
2N3019S-M | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
2N4382 | Technical Data TRANSISTOR maximum ratings VDS VD | |
DSI |
2N4392-M | Technical Data TRANSISTOR maximum ratings VDS VD | |
DSI |
2N6901-M | Technical Data TRANSISTOR maximum ratings VDS VD | |
DSI |
2N6901 | Technical Data TRANSISTOR maximum ratings VDS VD | |
DSI |
16F120 | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
40HFR80 | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
BAT49 | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
BYW88-600 | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
BZY93C24 | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
DS2-16A | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
BYS26-45 | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
BYS26-90 | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
BYT12-400 | Technical Data Diode ® maximum ratings Voltage | |
DSI |
BYT13-1000 | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
BYX92-400 | Technical Data Diode ® maximum ratings Voltage | |
DSI |
DSA1-16D | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
DTVS518 | Technical Data DIODE maximum ratings Voltage, Re | |
DSI |
MF12-1200 | ||
DSI |
182T2B | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
182T2C | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
183T2B | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
183T2C | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
184T2B | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
184T2C | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
185T2B | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
185T2C | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
BTW42-1200R | Technical Data THYRISTOR maximum ratings VDRM VR | |
DSI |
BUX47A | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
BLY93C | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
BLY93H | Technical Data TRANSISTOR maximum ratings Voltag | |
DSI |
ESM3004 | Technical Data TRANSISTOR maximum ratings Voltag | |
Toshiba |
TA8116F | ||
STMicroelectronics |
P60NF03L | STP60NF03L N-channel 30V - 0.008Ω - 60A TO-220 S | |
NEC |
K2541 | ||
HannStar |
HSD100IFW1-A01 | Document Title Document No. HannStar Display Corp | |
Fairchild Semiconductor |
FQA10N80C_F109 | FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N | |
nELL |
10N80 | SEMICONDUCTOR 10N80 Series RRooHHSS Nell High Pow | |
ETC |
2SC782 | Radio(AC100 ~120V) ~7>間電流 直流三て;'::J | |
ETC |
2SC783 | Radio(AC100 ~120V) ~7>間電流 直流三て;'::J | |
ETC |
C782 | Radio(AC100 ~120V) ~7>間電流 直流三て;'::J | |
ETC |
C783 | Radio(AC100 ~120V) ~7>間電流 直流三て;'::J | |
MagnaChip |
MDP1901 | MDP1901 – 100V Single N-Channel Trench MOSFET M | |
NXP |
74HC4060-Q100 | 74HC4060-Q100; 74HCT4060-Q100 14-stage binary ri | |
NXP |
74HCT4060-Q100 | 74HC4060-Q100; 74HCT4060-Q100 14-stage binary ri |
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