Manufacture | Part Number | Description | |
Unisonic Technologies |
12P10 | UNISONIC TECHNOLOGIES CO., LTD 12P10 -9.4A, -100V | |
Unisonic Technologies |
10N15 | UNISONIC TECHNOLOGIES CO., LTD 10N15 Preliminary | |
Unisonic Technologies |
1N40 | 1N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary | |
Unisonic Technologies |
22N20 | UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary | |
Unisonic Technologies |
2N40 | 2N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary | |
Unisonic Technologies |
3N40 | 3N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary | |
Unisonic Technologies |
4N40 | UNISONIC TECHNOLOGIES CO., LTD 4N40 4A, 400V N-CHA | |
NPC |
5052H | 5052H series Crystal Oscillator Module ICs OVERVIE | |
Unisonic Technologies |
5N40 | UNISONIC TECHNOLOGIES CO., LTD 5N40 Power MOSFET | |
Unisonic Technologies |
6N10 | UNISONIC TECHNOLOGIES CO., LTD 6N10 6.5 Amps, 100 | |
Unisonic Technologies |
7N10 | UNISONIC TECHNOLOGIES CO., LTD 7N10 7.0A, 100V N-C | |
Infineon |
ESD218-B1 | Protection Device TVS (Transient Voltage Suppresso | |
Infineon |
IDW20C65D2 | Diode RapidSwitchingEmitterControlledDiode IDW | |
Infineon |
IDW30C65D1 | Diode RapidSwitchingEmitterControlledDiode IDW | |
Infineon |
IDW30C65D2 | Diode RapidSwitchingEmitterControlledDiode IDW | |
Infineon |
IDW60C65D1 | Diode RapidSwitchingEmitterControlledDiode IDW | |
Infineon |
IDW75D65D1 | Diode RapidSwitchingEmitterControlledDiode IDW | |
Infineon |
IDW80C65D1 | Diode RapidSwitchingEmitterControlledDiode IDW | |
Infineon |
IDW80C65D2 | Diode RapidSwitchingEmitterControlledDiode IDW | |
Infineon |
IGP40N65F5 | IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5tec | |
Infineon |
IGW40N65F5 | IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5tec | |
Infineon |
IGP40N65H5 | IGBT Highspeed5IGBTinTRENCHSTOPTM5technolo | |
Infineon |
IGW40N65H5 | IGBT Highspeed5IGBTinTRENCHSTOPTM5technolo | |
Infineon |
IGW30N65L5 | IGBT LowVCE(sat)IGBTinTRENCHSTOPTM5technolo | |
Infineon |
IGW40N65F5A | IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5tech | |
Infineon |
IGW40N65H5A | IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5tech | |
Infineon |
IGW50N65F5A | IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5tech | |
Infineon |
IKD03N60RFA | IGBT IGBTwithintegrateddiodeinpackagesofferi | |
Infineon |
IKD04N60RFA | IGBT IGBTwithintegrateddiodeinpackagesofferi | |
Infineon |
IKD10N60RFA | IGBT IGBTwithintegrateddiodeinpackagesofferi | |
Infineon |
IKD15N60RFA | IGBT IGBTwithintegrateddiodeinpackagesofferi | |
Infineon |
IKW30N65EL5 | IKW30N65EL5 LowVCE(sat)seriesfifthgeneration | |
Infineon |
IKW40N65F5A | IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5tech | |
Infineon |
IKW40N65H5A | IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5tech | |
Infineon |
IKW50N65H5A | IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5tech | |
Infineon |
IKZ75N65EL5 | IGBT LowVCE(sat)IGBTinTRENCHSTOPTM5technolog | |
Infineon |
IPA083N10N5 | IPA083N10N5 MOSFET OptiMOSª5Power-Transistor,1 | |
Infineon |
IPB015N08N5 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB017N10N5 | IPB017N10N5 MOSFET OptiMOSª5Power-Transistor, | |
Infineon |
IPB020N08N5 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB024N08N5 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB027N10N5 | IPB027N10N5 MOSFET OptiMOSª5Power-Transistor, | |
Infineon |
IPB031N08N5 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB049N08N5 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPB065N10N3G | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPP023N08N5 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPP027N08N5 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPP030N10N5 | IPP030N10N5 MOSFET OptiMOSª5Power-Transistor,1 | |
Infineon |
IPP034N08N5 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPP052N08N5 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPP083N10N5 | MOSFET MetalOxideSemiconductorFieldEffectTran | |
Infineon |
IPT012N08N5 | IPT012N08N5 MOSFET OptiMOSTM5Power-Transistor, | |
Infineon |
IPT015N10N5 | IPT015N10N5 MOSFET OptiMOSTM5Power-Transistor, | |
International Rectifier |
IRF135S203 | Application Brushed Motor drive application | |
International Rectifier |
IRF135B203 | Application Brushed Motor drive application | |
International Rectifier |
IRF135SA204 | Application Brushed Motor drive application | |
International Rectifier |
IRF7480MTRPBF | Application Brushed Motor drive application | |
International Rectifier |
IRF7484QPBF | PD - 96167 AUTOMOTIVE MOSFET Typical Application | |
International Rectifier |
IRF7488 | PD - 94507 IRF7488 Applications l High frequency | |
International Rectifier |
IRF7488PBF | Applications l High frequency DC-DC converters l L | |
Infineon |
ISO2H823V2.5 | ISOFACE™ ISO2H823V2.5 Galvanic Isolated 8 Channe | |
Infineon |
KP229E3111 | TurboMAP Analog Manifold Air Pressure Sensor IC KP | |
ROHM |
BU21077MUV | Datasheet Capacitive Controller ICs Capacitive Sw | |
Rubycon |
TRV | TRV SERIES CHIP ALUMINUM ELECTROLYTIC CAPACITORS | |
Rubycon |
TWL | MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS TWL SER | |
Rubycon |
TXV | TXV SERIES CHIP ALUMINUM ELECTROLYTIC CAPACITORS | |
Rubycon |
TZV | TZV SERIES CHIP ALUMINUM ELECTROLYTIC CAPACITORS | |
Rubycon |
ZLS | RADIAL LEAD ALUMINUM ELECTROLYTIC CAPACITORS ZLS S | |
Rubycon |
ZLQ | RADIAL LEAD ALUMINUM ELECTROLYTIC CAPACITORS ZLQ S | |
Rubycon |
ZLG | MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ZLG SER | |
Rubycon |
YXM | MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS YXM SER | |
NPC |
WF5028 | WF5028 series 0.8V operation Crystal Oscillator Mo | |
Winbond |
W989D6KB | W989D6KB / W989D2KB 1. GENERAL DESCRIPTION 512Mb | |
Winbond |
W989D2KB | W989D6KB / W989D2KB 1. GENERAL DESCRIPTION 512Mb | |
Winbond |
W989D6DB | W989D6DB / W989D2DB 512Mb Mobile LPSDR Table of | |
Winbond |
W989D2DB | W989D6DB / W989D2DB 512Mb Mobile LPSDR Table of | |
Winbond |
W97AH6KB | W97AH6KB / W97AH2KB LPDDR2-S4B 1Gb Table of Cont | |
Winbond |
W97AH2KB | W97AH6KB / W97AH2KB LPDDR2-S4B 1Gb Table of Cont | |
Winbond |
W968D6DA | W968D6DA 256Mb Async./Page,Syn./Burst CellularRAM | |
Winbond |
W967D6HB | W967D6HB 1. GENERAL DESCRIPTION 128Mb Async./Pag | |
Winbond |
W966K6HB | W966K6HB 32Mb Async./Page,Syn./Burst CellularRAM T | |
Winbond |
W958D6DB | W958D6DB 256Mb Async./Burst/Sync./A/D MUX 1. GENE | |
Winbond |
W957D6HB | W957D6HB 1. GENERAL DESCRIPTION 128Mb Async./Bur | |
Winbond |
W956K6HB | W956K6HB 32Mb Async./Burst/Sync./A/D MUX TABLE OF | |
Winbond |
W956D6HB | W956D6HB 1. GENERAL DESCRIPTION 64Mb Async./Burs | |
Winbond |
W94AD6KB | W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Cont | |
Winbond |
W94AD2KB | W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Cont | |
Winbond |
W949D6KB | W949D6KB / W949D2KB 512Mb Mobile LPDDR Table of Co | |
Winbond |
W949D2KB | W949D6KB / W949D2KB 512Mb Mobile LPDDR Table of Co | |
Winbond |
W949D6DB | W949D6DB / W949D2DB 512Mb Mobile LPDDR Table of Co | |
Winbond |
W949D2DB | W949D6DB / W949D2DB 512Mb Mobile LPDDR Table of Co | |
Rubycon |
VXR | VXR SERIES SNAP-IN ALUMINUM ELECTROLYTIC CAPACITO | |
Rubycon |
VXK | VXK SERIES SNAP-IN ALUMINUM ELECTROLYTIC CAPACITO | |
Rubycon |
VXG | VXG SERIES SNAP-IN ALUMINUM ELECTROLYTIC CAPACITO | |
Rubycon |
USK | USK SERIES SNAP-IN ALUMINUM ELECTROLYTIC CAPACITO | |
Rubycon |
USC | USC SERIES SNAP-IN ALUMINUM ELECTROLYTIC CAPACITO | |
Rubycon |
UFG | UFG SERIES SNAP-IN ALUMINUM ELECTROLYTIC CAPACITO | |
Rubycon |
ULW | MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ULW SER | |
Unisonic Technologies |
UP9971 | UNISONIC TECHNOLOGIES CO., LTD UP9971 5A, 60V N-CH | |
Unisonic Technologies |
UP9972 | UNISONIC TECHNOLOGIES CO., LTD UP9972 Preliminar | |
Unisonic Technologies |
UP9T15G | UNISONIC TECHNOLOGIES CO., LTD UP9T15G N-CHANNEL E | |
Unisonic Technologies |
UP2790 | UNISONIC TECHNOLOGIES CO., LTD UP2790 SWITCHING N- | |
Unisonic Technologies |
UP2855 | UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminar | |
Unisonic Technologies |
UK4145 | UNISONIC TECHNOLOGIES CO., LTD UK4145 SWITCHING N- | |
Unisonic Technologies |
UFZ44 | UNISONIC TECHNOLOGIES CO., LTD UFZ44 50 A, 60 V N |
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