Manufacture | Part Number | Description | |
ON Semiconductor |
CPH3910 | DATA SHEET www.onsemi.com N-Channel JFET 25 V, 20 | |
ON Semiconductor |
NCV8450A | NCV8450, NCV8450A Self-Protected High Side Driver | |
ON Semiconductor |
NIMD6001ANR2G | NIMD6001N, NIMD6001AN Dual N-Channel Driver with | |
ON Semiconductor |
NIMD6001NR2G | NIMD6001N, NIMD6001AN Dual N-Channel Driver with | |
STMicroelectronics |
W45NM60 | STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - T | |
ON Semiconductor |
NCV8401A | Self-Protected Low Side Driver with Temperature an | |
ON Semiconductor |
NCV8402AD | Dual Self-Protected Low-Side Driver with Temperatu | |
ON Semiconductor |
NCV8405A | NCV8405A, NCV8405B Self-Protected Low Side Driver | |
ON Semiconductor |
NCV8403A | Self-Protected Low Side Driver with Temperature an | |
ON Semiconductor |
NCV8406A | Self-Protected Low Side Driver with Temperature an | |
ON Semiconductor |
NCV8440A | NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 | |
ON Semiconductor |
NIMD6001N | NIMD6001N, NIMD6001AN Dual N-Channel Driver with | |
ON Semiconductor |
NIMD6001AN | NIMD6001N, NIMD6001AN Dual N-Channel Driver with | |
Renesas Technology |
RJK1056DPB | RJK1056DPB 100V, 25A, 14m max. Silicon N Channe | |
Renesas Technology |
RJK0856DPB | RJK0856DPB 80V, 35A, 8.9m max. Silicon N Channe | |
International Rectifier |
IRF6633ATRPbF | l RoHS Compliant l Lead-Free (Qualified up to 2 | |
International Rectifier |
IRF6633APbF | l RoHS Compliant l Lead-Free (Qualified up to 2 | |
International Rectifier |
IRF3007PbF | PD -95618A IRF3007PbF Typical Applications l Ind | |
International Rectifier |
IRF7420PBF-1 | VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = | |
ON Semiconductor |
NGB8206AN | NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N | |
ON Semiconductor |
NGD8205ANT4G | NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Vol | |
ON Semiconductor |
2SK3557 | N-Channel JFET 15 V, 10 to 32 mA, 35 mS, CP 2SK3 | |
ON Semiconductor |
K3557 | Ordering number : EN7169A 2SK3557 N-Channel JFET | |
ON Semiconductor |
MCH5908 | Ordering number : ENA1218A MCH5908 N-Channel JFET | |
ON Semiconductor |
NGB8245N | NGB8245N Ignition IGBT 20 A, 450 V, N−Channel D | |
ON Semiconductor |
NGB8245NT4G | NGB8245N Ignition IGBT 20 A, 450 V, N−Channel D | |
ON Semiconductor |
NGD18N45CLB | NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N� | |
ON Semiconductor |
NGD18N45CLBT4G | NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N� | |
ON Semiconductor |
NGD15N41ACL | NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, | |
ON Semiconductor |
NGB15N41ACL | NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, | |
ON Semiconductor |
NGP15N41ACL | NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, | |
ON Semiconductor |
NGD8201B | NGD8201B Ignition IGBT, 20 A, 400 V N−Channel D | |
ON Semiconductor |
NGB18N40CLB | NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, | |
ON Semiconductor |
NGB18N40ACLB | NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, | |
ON Semiconductor |
NGD18N40ACLB | NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 40 | |
ON Semiconductor |
NGD18N40CLBT4G | NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 40 | |
ON Semiconductor |
NGD18N40ACLBT4G | NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 40 | |
ON Semiconductor |
NGB8202AN | NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N | |
ON Semiconductor |
NGB8202NT4G | NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N | |
ON Semiconductor |
NGB8202ANT4G | NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N | |
ON Semiconductor |
NGD8201AN | NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N | |
ON Semiconductor |
NGD8201NT4G | NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N | |
ON Semiconductor |
NGD8201ANT4G | NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N | |
ON Semiconductor |
NGB8204AN | NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Vo | |
ON Semiconductor |
NGB8204NT4G | NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Vo | |
ON Semiconductor |
NGB8204ANT4G | NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Vo | |
ON Semiconductor |
NGB8207BN | NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N | |
ON Semiconductor |
NGB8207NT4G | NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N | |
ON Semiconductor |
NGB8207BNT4G | NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N | |
ON Semiconductor |
NGB8207ABN | NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, | |
ON Semiconductor |
NGB8207ANT4G | NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, | |
ON Semiconductor |
NGB8207ABNT4G | NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, | |
ON Semiconductor |
NGD8205AN | NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Vol | |
ON Semiconductor |
NGD8205NT4G | NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Vol | |
Diodes |
ZXTR2005P5 | Description The ZXTR2005P5 monolithically integrat | |
Diodes |
ZXTR2005Z | ZXTR2005Z 100V INPUT, 5V 30mA REGULATOR TRANSISTOR | |
Diodes |
ZXTR2008K | A Product Line of Diodes Incorporated ZXTR2008K 10 | |
Diodes |
ZXTR2008P5 | Description The ZXTR2008P5 monolithically integrat | |
Diodes |
ZXTR2008Z | A Product Line of Diodes Incorporated ZXTR2008Z 10 | |
Diodes |
ZXTR2012K | A Product Line of Diodes Incorporated ZXTR2012K 10 | |
Diodes |
ZXTR2012P5 | Description The ZXTR2012P5 monolithically integrat | |
Diodes |
ZXTR2012Z | A Product Line of Diodes Incorporated ZXTR2012Z 10 | |
Diodes |
ZXTR2105F | ZXTR2105F 60V INPUT, 5V 15mA REGULATOR TRANSISTOR | |
Diodes |
ZXTR2108F | A Product Line of Diodes Incorporated ZXTR2108F 60 | |
Diodes |
ZXTR2112F | A Product Line of Diodes Incorporated ZXTR2112F 60 | |
NEC |
NP80N055MLE | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055ELE | |
NEC |
NP80N055NLE | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055ELE | |
Fairchild Semiconductor |
FDMS3016DC | FDMS3016DC N-Channel Dual CoolTM 56 PowerTrench® | |
Renesas |
NP60N055KUG | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N055KUG | |
Renesas |
NP80N04MDG | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04MDG, | |
Renesas |
NP80N04NDG | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04MDG, | |
Renesas |
NP80N04PDG | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04MDG, | |
International Rectifier |
IRFS4020PbF | PD - 97393 IRFS4020PbF DIGITAL AUDIO MOSFET IRFSL4 | |
International Rectifier |
IRFSL4020PbF | PD - 97393 IRFS4020PbF DIGITAL AUDIO MOSFET IRFSL4 | |
International Rectifier |
AUIRFR8405 | AUTOMOTIVE GRADE Features l Advanced Process Tech | |
International Rectifier |
AUIRFU8405 | AUTOMOTIVE GRADE Features l Advanced Process Tech | |
International Rectifier |
IRF1010ZPbF | PD - 95361A IRF1010ZPbF IRF1010ZSPbF Features | |
International Rectifier |
IRF1010ZSPbF | PD - 95361A IRF1010ZPbF IRF1010ZSPbF Features | |
International Rectifier |
IRF1010ZLPbF | PD - 95361A IRF1010ZPbF IRF1010ZSPbF Features | |
Renesas |
NP34N055SHE | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HHE | |
Fairchild Semiconductor |
FDMS8320LDC | FDMS8320LDC N-Channel Dual CoolTM Power Trench® M | |
Fairchild Semiconductor |
FDMS2510SDC | FDMS2510SDC N-Channel Dual CoolTM PowerTrench® Sy | |
Renesas Technology |
RJK0214DPA | Preliminary Datasheet RJK0214DPA Silicon N Chann | |
Renesas |
UPA2731UT1A | DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2731UT | |
International Rectifier |
IRF7420PbF | l Ultra Low On-Resistance l P-Channel MOSFET l Sur | |
International Rectifier |
IRF6710S2TRPbF | PD - 97124D IRF6710S2TRPbF IRF6710S2TR1PbF l RoH | |
International Rectifier |
IRF6710S2TR1PbF | PD - 97124D IRF6710S2TRPbF IRF6710S2TR1PbF l RoH | |
NEC |
NP80N055KLE | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055ELE | |
GME |
T2095 | Production specification High Voltage Fast Switch | |
Jilin Sino |
T2097A | NPN 型高压功率开关晶体管 HIGH VOLTAGE FA | |
XINSUN |
W2XN934 | 江阴新顺微电子有限公司分立器件芯� | |
XINSUN |
W2XN9155 | 江阴新顺微电子有限公司分立器件芯� | |
Jilin Sino |
3DD2101 | CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR | |
Diodes |
APR3415B | APR3415B SECONDARY SIDE SYNCHRONOUS RECTIFICATION | |
Diodes |
APR3415 | NEW PRODUCT A Product Line of Diodes Incorporated | |
Diodes |
APS39903 | NEW PRODUCT A Product Line of Diodes Incorporated | |
KEC |
KIA4559P | SEMICONDUCTOR KIA4559P/S/F TECHNICAL DATA BIPOL | |
KEC |
KIA4559S | SEMICONDUCTOR KIA4559P/S/F TECHNICAL DATA BIPOL | |
KEC |
KIA4559F | SEMICONDUCTOR KIA4559P/S/F TECHNICAL DATA BIPOL | |
KEC |
KIA4558P | SEMICONDUCTOR TECHNICAL DATA KIA4558P/S/F/FK BIPO | |
KEC |
KIA4558S | SEMICONDUCTOR TECHNICAL DATA KIA4558P/S/F/FK BIPO | |
Panasonic Semiconductor |
MA190 | Switching Diodes MA2B190 (MA190) Silicon epitaxial | |
Powerex |
PS21A7A | Powerex, Inc., 173 Pavilion Lane, Youngwood, Penns | |
Tyco |
V23083 | Twin relays Mini power relay UT Features – Mini | |
Diodes |
APT13005D | Features BVCEO > 450V BVCES > 700V BVE | |
Diodes |
APT17 | Features BVCEO > 480V BVCES > 700V BVE | |
BCD |
APT27H | Data Sheet HIGH VOLTAGE NPN TRANSISTOR General De | |
Diodes |
APT27H | Green A Product Line of Diodes Incorporated AP | |
Diodes |
APT27 | Green A Product Line of Diodes Incorporated AP | |
Diodes |
APM8600 | NOT RECOMMENDED FOR NEW DESIGN Green APM8600 SIN | |
Diodes |
APM8601 | NOT RECOMMENDED FOR NEW DESIGN Green APM8601 DUA |
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