Manufacture | Part Number | Description | |
Samsung |
LTN101NT05-T01 | Approval TO : Toshiba DATE : July. 29, 2010 SAMSUN | |
TRINAMIC |
TMC262 | POWER DRIVER FOR STEPPER MOTORS INTEGRATED CIRCUI | |
TRINAMIC |
TMC248 | POWER DRIVER FOR STEPPER MOTORS INTEGRATED CIRCUI | |
Kexin |
AO4618-HF | ||
Kexin |
KO4618-HF | ||
InfoVision |
M101NWT2R1 | InfoVision Optoelectronics ( Kunshan ) Co.,LTD. D | |
Kexin |
AO4618 | ||
Kexin |
KO4618 | ||
International Rectifier |
IRF7526D1PbF | PD -95437 IRF7526D1PbF l Co-packaged HEXFET® Po | |
International Rectifier |
IRF8721GPbF | PD - 96262 IRF8721GPbF Applications l Control MOS | |
Diodes |
DMP4025LK3 | ADVANCE INFORMATION Product Summary BVDSS -40V | |
Fairchild Semiconductor |
FQD13N06TM | FQD13N06 — N-Channel QFET® MOSFET FQD13N06 N-C | |
International Rectifier |
IRFH8321PBF | VDS Vgs max RDS(on) max (@VGS = 10V) (@VGS = 4.5V) | |
International Rectifier |
IRFH8321TRPBF | VDS Vgs max RDS(on) max (@VGS = 10V) (@VGS = 4.5V) | |
International Rectifier |
IRF9392PbF | VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25 | |
International Rectifier |
IRF9392TRPbF | VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25 | |
Renesas Technology |
RJK03M9DNS | RJK03M9DNS Silicon N Channel Power MOS FET Power S | |
Renesas |
UPA2211T1M | DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2211T1 | |
Renesas |
UPA2210T1M | DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2210T1 | |
Renesas |
UPA2200T1M | DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2200T1 | |
Fairchild Semiconductor |
FDD050N03B | FDD050N03B N-Channel PowerTrench® MOSFET March 2 | |
Renesas |
UPA2520 | DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2520 N | |
Renesas |
UPA2821T1L | μPA2821T1L MOS FIELD EFFECT TRANSISTOR Prelimina | |
Fairchild Semiconductor |
FDS8449_F085 | FDS8449_F085 40V N-Channel PowerTrench®MOSFET Ju | |
Fairchild Semiconductor |
FDMS8888 | FDMS8888 N-Channel PowerTrench® MOSFET June 2015 | |
Fairchild Semiconductor |
FDD1600N10ALZD | FDD1600N10ALZD — BoostPak (N-Channel PowerTrench | |
Fairchild Semiconductor |
FQU4N50TU_WS | FQU4N50TU_WS — N-Channel QFET® MOSFET FQU4N50T | |
Fairchild Semiconductor |
FDMS8820 | FDMS8820 N-Channel PowerTrench® MOSFET FDMS8820 | |
Renesas |
UPA2737GR | Data Sheet μPA2737GR P-channel MOSFET –30 V, | |
Renesas |
UPA2521 | DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2521 N | |
International Rectifier |
IRLR024ZPbF | Features n Logic Level n Advanced Process Technolo | |
International Rectifier |
IRLU024ZPbF | Features n Logic Level n Advanced Process Technolo | |
Fairchild Semiconductor |
FQD3N60C | FQD3N60C FQD3N60C 600V N-Channel MOSFET Features | |
Fairchild Semiconductor |
FDS4410A | FDS4410A Single N-Channel, Logic-Level, PowerTrenc | |
International Rectifier |
IRF9388PbF | VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25 | |
International Rectifier |
IRF9388TRPbF | VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25 | |
Renesas Technology |
RJK03M7DPA | RJK03M7DPA Silicon N Channel Power MOS FET Power S | |
Renesas Technology |
RJK03M6DPA | RJK03M6DPA 30V, 30A, 9.4mΩmax. N Channel Power M | |
Renesas Technology |
RJK03M6DNS | RJK03M6DNS Silicon N Channel Power MOS FET Power S | |
Fairchild Semiconductor |
FDC3535 | FDC3535 P-Channel Power Trench® MOSFET FDC3535 P | |
Fairchild Semiconductor |
FDD8445_F085 | FDD8445_F085 N-Channel PowerTrench® MOSFET MPLEME | |
Renesas Technology |
RJK03M5DNS | RJK03M5DNS Silicon N Channel Power MOS FET Power S | |
Panasonic Semiconductor |
D1985 | Power Transistors 2SD1985, 2SD1985A Silicon NPN t | |
Rohm |
D1856 | Transistors 2SD2212 / 2SD2143 / 2SD1866 / 2SD1764 | |
Core Micro Technology |
SP2038 | SP2038 3.5W 带耳放模式立体声音频功率� | |
KEC |
BC338 | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLI | |
AUO |
A101EW01-V0 | &86720(5 $33529$/ 6+((7 &RPSDQ 1DPH 02'(/ $( | |
Diodes Incorporated |
DDTC144ELP | DDTC144ELP PRE-BIASED (R1=R2) SMALL SIGNAL SURFACE |
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