Manufacture | Part Number | Description | |
Huajing Microelectronics |
3DD13005G8D | 硅三重扩散 NPN 双极型晶体管 3DD13005G8D | |
Huajing Microelectronics |
3DD13005C9D | 硅三重扩散 NPN 双极型晶体管 3DD13005 C9 | |
Toshiba |
TC58NYG2S3ETA00 | TC58NYG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CI | |
Avago |
SPFMPR302 | SPF MPR3 02 Plastic Fiber Optic Receiver for MOST | |
ON Semiconductor |
NCP3170 | NCP3170 Synchronous PWM Switching Converter The | |
Rohm |
BU94501AMUV | Datasheet USB Audio Decoder LSI Series AAC/WMA/MP | |
Rohm |
BU94501AKS2 | Datasheet USB Audio Decoder LSI Series AAC/WMA/MP | |
Rohm |
BU94502AMUV | Datasheet USB Audio Decoder LSI Series AAC/WMA/MP | |
Rohm |
BU94502AKS2 | Datasheet USB Audio Decoder LSI Series AAC/WMA/MP | |
Feihonltd |
FHP75N08 | 产品描述 FHP75N08为低压大电流功率MOS� | |
Infineon Technologies |
IPP80N04S2L-03 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPD25N06S2-40 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPD25N06S4L-30 | OptiMOS®-T2 Power-Transistor Features • N-chann | |
Infineon Technologies |
IPD25CNE8NG | IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N | |
Infineon Technologies |
IPU25CNE8NG | IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N | |
Infineon Technologies |
IPD25CN10NG | IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N | |
Infineon Technologies |
IPD250N06N3G | Type OptiMOS(TM)3 Power-Transistor Features • I | |
Infineon Technologies |
IPD15N06S2L-64 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPB100N06S2L-05 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPP100N06S2L-05 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPB100N06S2-05 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPP100N06S2-05 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPB80N06S2L-H5 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPP80N06S2L-H5 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPB80N06S2-05 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPP80N06S2-05 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPB80N06S2-H5 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPP80N06S2-H5 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPB80N06S2L-09 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPP80N06S2L-09 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPB80N06S2L-07 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPP80N06S2L-07 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPP80N04S2-04 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPI80N04S2-04 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPP80N08S2L-07 | OptiMOS™ Power-Transistor Features • N-channel | |
Infineon Technologies |
IPB77N06S2-12 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPP77N06S2-12 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPB80N06S2L-06 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPP80N06S2L-06 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPB70P04P4-09 | OptiMOS®-P2 Power-Transistor Features • P-chann | |
Infineon Technologies |
IPI70P04P4-09 | OptiMOS®-P2 Power-Transistor Features • P-chann | |
Infineon Technologies |
IPP70P04P4-09 | OptiMOS®-P2 Power-Transistor Features • P-chann | |
Infineon Technologies |
IPI70N10SL-16 | SIPMOS Power-Transistor Feature • N-Channel | |
Infineon Technologies |
IPP70N10SL-16 | SIPMOS Power-Transistor Feature • N-Channel | |
Infineon Technologies |
IPB70N10SL-16 | SIPMOS Power-Transistor Feature • N-Channel | |
Infineon Technologies |
IPB70N10S3L-12 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPI70N10S3L-12 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPP70N10S3L-12 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPB70N10S3-12 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPI70N10S3-12 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPP70N10S3-12 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPB70N04S4-06 | OptiMOS®-T2 Power-Transistor Features • N-chann | |
Infineon Technologies |
IPI70N04S4-06 | OptiMOS®-T2 Power-Transistor Features • N-chann | |
Infineon Technologies |
IPP70N04S4-06 | OptiMOS®-T2 Power-Transistor Features • N-chann | |
Infineon Technologies |
IPB70N04S3-07 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPI70N04S3-07 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPP70N04S3-07 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPB77N06S3-09 | OptiMOS®-T2 Power-Transistor Features • N-chann | |
Infineon Technologies |
IPI77N06S3-09 | OptiMOS®-T2 Power-Transistor Features • N-chann | |
Infineon Technologies |
IPP77N06S3-09 | OptiMOS®-T2 Power-Transistor Features • N-chann | |
Infineon Technologies |
IPD220N06L3G | Type OptiMOS(TM)3 Power-Transistor Features • I | |
Infineon Technologies |
IPD22N08S2L-50 | OptiMOS® Power-Transistor Features • N-channel | |
Infineon Technologies |
IPD70N04S3-07 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPD70N03S4L-04 | OptiMOS®-T2 Power-Transistor Features • N-chann | |
Infineon Technologies |
IPD70N10S3L-12 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPD70P04P4-09 | OptiMOS®-P2 Power-Transistor Features • P-chann | |
Infineon Technologies |
IPD70P04P4L-08 | OptiMOS®-P2 Power-Transistor Features • P-chann | |
Infineon Technologies |
IPD75N04S4-06 | OptiMOS®-T2 Power-Transistor Features • N-chann | |
Infineon Technologies |
IPD70N10S3-12 | OptiMOS™-T Power-Transistor Features • N-chann | |
Infineon Technologies |
IPB100N10S3-05 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPI100N10S3-05 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPP100N10S3-05 | OptiMOS®-T Power-Transistor Features • N-channe | |
Infineon Technologies |
IPD35N10S3L-26 | OptiMOS®-T Power-Transistor Features • N-channe | |
Murata Electronics |
LQW15CA1R0K00 | ||
Linear Technology |
LTM4630 | LTM4630 Dual 18A or Single 36A DC/DC µModule Reg | |
Taiwan Semiconductor |
TPAR3D | TPAR3D - TPAR3J Taiwan Semiconductor CREAT BY ART | |
Taiwan Semiconductor |
TPAR3G | TPAR3D - TPAR3J Taiwan Semiconductor CREAT BY ART | |
Taiwan Semiconductor |
TPAR3J | TPAR3D - TPAR3J Taiwan Semiconductor CREAT BY ART | |
Taiwan Semiconductor |
KBU1001G | KBU1001G – KBU1007G Taiwan Semiconductor 10A, 5 | |
Taiwan Semiconductor |
KBU1002G | KBU1001G – KBU1007G Taiwan Semiconductor 10A, 5 | |
Taiwan Semiconductor |
KBU1003G | KBU1001G – KBU1007G Taiwan Semiconductor 10A, 5 | |
Taiwan Semiconductor |
KBU1004G | KBU1001G – KBU1007G Taiwan Semiconductor 10A, 5 | |
Taiwan Semiconductor |
KBU1005G | KBU1001G – KBU1007G Taiwan Semiconductor 10A, 5 | |
Taiwan Semiconductor |
KBU1006G | KBU1001G – KBU1007G Taiwan Semiconductor 10A, 5 | |
Taiwan Semiconductor |
KBU1007G | KBU1001G – KBU1007G Taiwan Semiconductor 10A, 5 | |
FOSHAN BLUE ROCKET |
3DA2396 | 2SD2396(3DA2396) 硅 NPN 半导体三极管/SILIC | |
Infineon Technologies |
K50H603 | IGBT HighspeedDuoPack:IGBTinTrenchandFields | |
HUAJING MICROELECTRONICS |
CS8N65FA9H | Huajing Discrete Devices Silicon N-Channel Power M | |
FOSHAN BLUE ROCKET |
BRF8N65 | BRF8N65(CS8N65F) N-Channel MOSFET/N 沟 MOS 晶� | |
FOSHAN BLUE ROCKET |
CS8N65F | BRF8N65(CS8N65F) N-Channel MOSFET/N 沟 MOS 晶� |
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