ZXMS6005DT8Q Datasheet PDF - Diodes

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ZXMS6005DT8Q
Diodes

Part Number ZXMS6005DT8Q
Description N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Page 9 Pages


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ZXMS6005DT8Q
Green
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET® MOSFET
Product Summary
Continuos Drain Source Voltage
On-State Resistance
Nominal Load Current (VIN = 5V)
Clamping Energy
60V
200m
1.8A
210mJ
Description
The ZXMS6005DT8Q is a dual self protected low side MOSFET with
logic level input. It integrates over-temperature, over-current, over-
voltage (active clamp) and ESD protected logic level functionality. The
ZXMS6005DT8Q is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Applications
Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
Features and Benefits
Compact Dual Package
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Over Voltage Protection (active clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
High Continuous Current Rating
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
AEC-Q101-006 Short Circuit Reliability Characterized
PPAP Capable (Note 4)
Mechanical Data
Case: SM-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.117 grams (approximate)
SM-8
IN1
Top View
D1 D2
IN2
S1
Device Symbol
S2
1
IN1
S1
IN2
S2
Top View
Pin-Out
D1
D1
D2
D2
Ordering Information (Note 5)
Product
ZXMS6005DT8QTA
Marking
ZXMS6005D
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Notes:
1. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMS
6005D
Pin 1
ZXMS6005D = Product Type Marking Code
Top View
IntelliFET® is a registered trademark of Diodes Incorporated.
ZXMS6005DT8Q
Document number: DS37136 Rev. 3 - 2
1 of 9
www.diodes.com
July 2014
© Diodes Incorporated



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Functional Block Diagram
ZXMS6005DT8Q
Application Information
Two completely isolated independent channels
Especially suited for loads with a high in-rush current such as lamps and motors
All types of resistive, inductive and capacitive loads in switching applications
μC compatible power switch for 12V DC applications
Automotive rated
Replaces electromechanical relays and discrete circuits
Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation
The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the
protection circuitry. This does not compromise the product’s ability to self-protect at low VDS
IntelliFET® is a registered trademark of Diodes Incorporated.
ZXMS6005DT8Q
Document number: DS37136 Rev. 3 - 2
2 of 9
www.diodes.com
July 2014
© Diodes Incorporated



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ZXMS6005DT8Q
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Continuous Drain-Source Voltage
Drain-Source Voltage For Short Circuit Protection
Continuous Input Voltage
Continuous Input Current @ -0.2V VIN 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
Pulsed Drain Current @VIN = 3.3V ( Note 7)
Pulsed Drain Current @VIN = 5V ( Note 7)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
Electrostatic Discharge (Human Body Model)
Charged Device Model
Symbol
VDS
VDS(SC)
VIN
IIN
IDM
IDM
IS
ISM
EAS
VESD
VCDM
Value
60
24
-0.5 to +6
No limit
│IIN │≤2
5
6
2.5
10
210
4000
1000
Units
V
V
V
mA
A
A
A
A
mJ
V
V
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at TA = +25°C (Notes 5 & 8)
Linear Derating Factor
Power Dissipation at TA = +25°C (Notes 5 & 9)
Linear Derating Factor
Power Dissipation at TA = +25°C (Notes 6 & 8)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Notes 5 & 8)
Thermal Resistance, Junction to Ambient (Notes 5 & 9)
Thermal Resistance, Junction to Case (Notes 6 & 8)
Thermal Resistance, Junction to Case (Note 10)
Operating Temperature Range
Storage Temperature Range
Symbol
PD
PD
PD
RθJA
RθJA
RθJC
RθJC
TJ
TSTG
Value
1.16
9.28
1.67
13.3
2.13
17
108
75
58.7
26.5
-40 to +150
-55 to +150
Units
W
mW/°C
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C/W
°C
°C
Notes:
5. For a dual device surface mounted on a 25mm x 25mm single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air
conditions.
6. For a dual device surface mounted on FR4 PCB measured at t≤ 10sec.
7. Repetitive rating25mm x 25mm FR4 PCB, D = 0.02, Pulse width = 300µs – pulse width limited by junction temperature. Refer to transient
thermal impedance graph.
8. For a dual device with one active die.
9. For a dual device with 2 active die running at equal power.
10. Thermal resistance from junction to the mounting surface of the drain pin.
Recommended Operating Conditions
The ZXMS6005DT8Q is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic
Input Voltage Range
Ambient Temperature Range
High Level Input Voltage for MOSFET to be on
Low Level Input Voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
Symbol
VIN
TA
VIH
VIL
VP
Min Max Unit
0 5.5 V
-40 +125 °C
3 5.5 V
0 0.7 V
0 24 V
IntelliFET® is a registered trademark of Diodes Incorporated.
ZXMS6005DT8Q
Document number: DS37136 Rev. 3 - 2
3 of 9
www.diodes.com
July 2014
© Diodes Incorporated



No Preview Available !

Thermal Characteristics
ZXMS6005DT8Q
Limited
10 by RDS(on)
Limited by Over-Current Protection
1ms
1
100m
10m
DC 1s
100ms
Single Pulse
Tamb=25°C
25X25X1.6mm FR4 10ms
Single 1oz Cu
One active die Limit of s/c protection
1 10
VDS Drain-Source Voltage (V)
Safe Operating Area
1.6
1.4
1.2 2 active die
1.0
0.8
0.6
0.4 1 active die
0.2
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
120 25X25X1.6mm FR4
Single 1oz Cu
100 One active die
80 Tamb=25°C
D=0.5
60
40 D=0.2
20
0
100µ 1m
10m 100m
Single Pulse
D=0.05
D=0.1
1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100
25X25X1.6mm FR4
Single 1oz Cu
One active die
Single Pulse
Tamb=25°C
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
IntelliFET® is a registered trademark of Diodes Incorporated.
ZXMS6005DT8Q
Document number: DS37136 Rev. 3 - 2
4 of 9
www.diodes.com
July 2014
© Diodes Incorporated



ZXMS6005DT8Q datasheet pdf
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ZXMS6005DT8Q pdf
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ZXMS6005DT8Q N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET ZXMS6005DT8Q
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