ZXMS6004DN8 Datasheet PDF - Diodes

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ZXMS6004DN8
Diodes

Part Number ZXMS6004DN8
Description N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Page 9 Pages


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ZXMS6004DN8
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET® MOSFET
Product Summary
Continuos Drain-Source Voltage: 60V
On-State Resistance: 500m
Nominal Load Current (VIN = 5V): 1.3A
Clamping Energy: 120mJ
Description
The ZXMS6004DN8 is a dual self-protected low side MOSFET with
logic level input. It integrates over-temperature, overcurrent,
overvoltage (active clamp) and ESD protected logic level functionality.
The ZXMS6004DN8 is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Features and Benefits
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Overvoltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Overcurrent Protection
Input Protection (ESD)
High Continuous Current Rating
Totally Lead-Free; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
Mechanical Data
SO-8
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 79.1 mg (Approximate)
Top View
IN1
D1 D2
IN2
S1
Device Symbol
S2
S1
IN1
S2
IN2
Top View
Pin-Out
D1
D1
D2
D2
Ordering Information (Note 4)
Product
ZXMS6004DN8-13
Marking
6004DN8
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500 units
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Logo
Part No.
Pin 1.
6004DN8
YY WW
6004DN8 = Product name
YY: Year
WW: Week: 01~52;
52 represents 52 and 53 week
Top View
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
1 of 9
www.diodes.com
August 2015
© Diodes Incorporated



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Functional Block Diagram
ZXMS6004DN8
Application Information
Two completely isolated independent channels
Especially suited for loads with a high in-rush current such as lamps and motors
All types of resistive, inductive and capacitive loads in switching applications
μC compatible power switch for 12V and 24V DC applications
Replaces electromechanical relays and discrete circuits
Linear Mode Capability the current-limiting protection circuitry is designed to deactivate at low VDS to minimize on-state power dissipation
The maximum DC operating current is therefore determined by the thermal capability of the package or board combination, rather than by the
protection circuitry. This does not compromise the product’s ability to self-protect at low VDS
Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)
Characteristic
Continuous Drain-Source Voltage
Drain-Source Voltage For Short Circuit Protection
Continuous Input Voltage
Continuous Input Current @ -0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
Pulsed Drain Current @VIN = 3.3V
Pulsed Drain Current @VIN = 5V
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
Electrostatic Discharge (Human Body Model)
Charged Device Model
Symbol
VDS
VDS(SC)
VIN
IIN
IDM
IDM
IS
ISM
EAS
VHBM
VCDM
Value
60
36
-0.5 to +6
No limit
IIN ≤2
2
2.5
1
5
120
4,000
1,000
Units
V
V
V
mA
A
A
A
A
mJ
V
V
ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
2 of 9
www.diodes.com
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ZXMS6004DN8
Thermal Characteristics
Characteristic
Symbol
Power Dissipation at Tamb = +25°C (Note 5)
Linear Derating Factor
PD
Power Dissipation at Tamb = +25°C (Note 6)
Linear Derating Factor
PD
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
Thermal Resistance, Junction to Case (Note 7)
RθJC
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
Value
1.21
9.7
1.56
12.5
103
81
13.5
-40 to +150
-55 to +150
Units
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
°C
Recommended Operating Conditions
The ZXMS6004DN8 is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic
Input Voltage Range
Ambient Temperature Range
High Level Input Voltage for MOSFET to be On
Low Level Input Voltage for MOSFET to be Off
Peripheral Supply Voltage (voltage to which load is referred)
Symbol
VIN
TA
VIH
VIL
VP
Min
Max
Unit
0 5.5 V
-40 +125 °C
3 5.5 V
0 0.7 V
0 36 V
ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
3 of 9
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August 2015
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Thermal Characteristics (Continued)
10
Rds(on)
1 Limited
0.1
Id(A) @
DC
Id(A)
@Pw=10s
Id(A)
@Pw=1s
Id(A)
@Pw=100
ms
Id(A)
@Pw=10
ms
Id(A)
@Pw=1ms
Id(A)
@Pw=100
us
0.01
0.1
1 10
Vds, Drain-Source Voltage (V)
SOA, Safe Operation Area
Tj,(Max)=150
Ta=25,
Vgs=5V
Single Pulse
100
ZXMS6004DN8
2.50
2.00
1.50
IF(A)-MRP(1)
IF(A)-1 inch(2)
1.00
0.50
0.00
0
25 50 75 100 125 150
TA, Ambient Temperature ()
Figure. DC Forward Current Derating
1
0.1
0.01
r(t) @ D=0.9
r(t) @ D=0.7
r(t) @ D=0.5
r(t) @ D=0.3
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.02
r(t) @ D=0.01
r(t) @ D=0.005
r(t) @ D=Single Pulse
Rthja(t)=r(t) * Rthja
Rthja=108C/W
Duty Cycle, D=t1 / t2
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1, Pulse Duration Time (sec)
Figure: Transient Thermal Resistance
1000
800
Single Pulse
700 Rthja=108C/W
Rthja(t)=Rthja * r(t)
Tj-Ta=P * Rthja (t)
600
500
400
300
200
100
0
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1, Pulse Duration Time (sec)
Figure 1: Pulse Power Dissipation
1000
ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
4 of 9
www.diodes.com
August 2015
© Diodes Incorporated



ZXMS6004DN8 datasheet pdf
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