Z00607DA Datasheet PDF - STMicroelectronics

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Z00607DA
STMicroelectronics

Part Number Z00607DA
Description SENSITIVE GATE TRIACS
Page 4 Pages


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Z00607MA
® Z00607DA
SENSITIVE GATE TRIACS
FEATURES
IT(RMS) = 0.8A
VDRM = 400V and 600V
IGT = 5mA
A2 A1
G
DESCRIPTION
The Z006607xA triacs are intended for general
applications where high gate sensitivity is
required.
A1
G A2
TO92
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
Tstg
Tj
Tl
Parameter
RMS on-state current
(360° conduction angle)
Tl= 50 °C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 8.3 ms
tp = 10 ms
Non repetitive surge peak on-state current
(Tj initial = 110°C, full cycle)
I2t Value for fusing
F = 60Hz
tp = 10 ms
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s
Value
0.8
10.5
10
8
0.5
- 40, + 150
- 40, + 110
260
Unit
A
A
A2s
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 110°C
May 1999 - Ed: 1
Z00607xA
DM
400 600
Unit
V
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Z00607DA / Z00607MA
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-l)
Junction to ambient
Junction to lead
Parameter
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.1 W PGM = 2 W (tp = 20 µs) IGM = 1 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT VD=12V (DC) RL=140Tj= 25°C I-II-III MAX
IV MAX
VGT VD=12V (DC) RL=140Tj= 25°C I-II-III-IV MAX
VGD VD=VDRM RL=3.3k
Tj= 110°C I-II-III-IV MIN
tgt VD=VDRM IG = 25mA
IT = 1.0A
dIG/dt = 0.25A/µs
Tj= 25°C I-II-III-IV TYP
IH * IT= 200 mA Gate open Tj= 25°C
MAX
IL IG= 1.2 IGT
Tj= 25°C I-III-IV MAX
II MAX
VTM *
IDRM
IRRM
ITM= 1.1A tp= 380µs
VD = VDRM
VR = VRRM
Tj= 25°C
Tj= 25°C
Tj= 110°C
MAX
MAX
MAX
dV/dt * VD=67%VDRM
Gate open
Tj= 110°C
MIN
(dV/dt)c * (dI/dt)c = 0.35 A/ms
Tj= 110°C
MIN
* For either polarity of electrode A2 voltage with reference to electrode A1
Value
150
60
Sensitivity
07
5
7
1.5
0.2
2
5
10
20
1.5
10
0.1
10
1.5
Unit
°C/W
°C/W
Unit
mA
V
V
µs
mA
mA
V
µA
mA
V/µs
V/µs
Fig 1: Maximum power dissipation versus RMS
on-state current.
Fig 2: Correlation between maximum power dissi-
pation and maximum allowable temperatures
(Tamb and Tlead).
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2 α=30°
0.1
0.0
0.0 0.1
α=180°
α=90°
α=120°
α=60°
IT(RMS)(A)
0.2 0.3 0.4 0.5
180°
α
α
0.6 0.7 0.8
P(W)
1.0
0.9
0.8
Rth(j-l)
Tlead (°C)
50
0.7
0.6 70
0.5
Rth(j-a)
0.4
0.3 90
0.2
0.1 α=180°
Tamb(°C)
0.0 110
0 10 20 30 40 50 60 70 80 90 100 110
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Z00607DA / Z00607MA
Fig 3: RMS on-state current versus ambient tem- Fig 4: Relative variation of thermal impedance
perature.
junction to ambient versus pulse duration.
IT(RMS)(A)
1.0
0.9
0.8
Rth(j-a)=Rth(j-l)
α=180°
0.7
0.6
0.5
0.4
Rth(j-a)=150°C/W
0.3
0.2
0.1 Tamb(°C)
0.0
0 10 20 30 40 50 60 70 80 90 100 110
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature (typi-
cal values).
Fig 6: Non repetitive surge peak on-state current
versus number of cycles.
IGT,IH[Tj] / IGT,IH[Tj=25°C]
2.5
2.0 IGT
1.5
IH
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120
ITSM(A)
9
8
7
6
5
4
3
2
1
0
1
Tj initial=25°C
F=50Hz
Number of cycles
10 100
1000
Fig 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I2t.
ITSM(A),I²t(A²s)
50.0
10.0
ITSM
Tj initial=25°C
1.0
0.1
1
I²t
tp(ms)
25
10
Fig 8: On-state characteristics (maximum values).
ITM(A)
10.0
Tj max.:
Vto= 0.95 V
Rd= 420 m
1.0
Tj=Tj max.
Tj=25°C
VTM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
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Z00607DA / Z00607MA
PACKAGE MECHANICAL DATA
TO92 (Plastic)
A
BC
F
D
E
DIMENSIONS
REF. Millimeters
Inches
Typ. Min. Max. Typ. Min. Max.
a A 1.35
0.053
B 4.70 0.185
C 2.54
0.100
D 4.40
0.173
E 12.70
0.500
F 3.70 0.146
a 0.45 0.017
Ordering type
Z00607DA 1BA2
Z00607MA 1BA2
Marking
Z0607DA
Z0607MA
Package
TO92
TO92
Weight
0.2g.
0.2g.
Base qty
2500
2500
Delivery mode
Bulk
Bulk
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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