WPT2N41 Datasheet PDF - Will Semiconductor

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WPT2N41
Will Semiconductor

Part Number WPT2N41
Description PNP Power Transistor
Page 4 Pages


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WPT2N41
Single, PNP, -30V, -3A, Power Transistor
Descriptions
The WPT2N41 is PNP bipolar power transistor
with very low saturation voltage. This device is
suitable for use in charging circuit and other power
management. Standard Product WPT2N41 is
Pb-free.
WPT2N41
Http//:www.willsemi.com
PDFN3x2-8L
Features
Ultra low collector-to-emitter saturation voltage
High DC current gain >100
3A continue collector current
Small package PDFN3x2-8L.
Pin configuration (Top view)
Applications
Charging circuit
Power regulator
Other power management in portable
equipments
2N41 = Device code
YY = Year
WW = Week
Marking
Order information
Device
Package
Shipping
WPT2N41-8/TR PDFN3x2-8L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jul, 2012 - Rev.1.0



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Absolute maximum ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Continues collector current a
Continues collector current b
Pulse collector current c
Power dissipation a
Power dissipation b
Junction Temperature
Lead Temperature
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
ICM
PD
TJ
TL
Tstg
Value
-32
-45
-6
-3
-2
-6
3.0
1.2
150
260
-55~155
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width=300µs, Duty Cycle<2%
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage c
Base-emitter saturation voltage c
DC current gain c
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
Test Conditions
IC=-10mA, IB=0mA
IC=-1mA, IE=0mA
IE=-100uA, IC=0mA
VCB=-40V
VEB=-5V
IC=-2A, IB=-200mA
IC=-2A, IB=-200mA
IC=-1A , VCE=-2V
Min.
-32
-45
-6
100
Typ.
-0.2
-1.0
200
WPT2N41
Unit
V
V
V
A
A
A
W
W
°C
°C
°C
Max.
-100
-100
-0.5
-1.5
320
Unit
V
V
V
nA
nA
V
V
Will Semiconductor Ltd. 2 Jul, 2012 - Rev.1.0



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WPT2N41
Typical Characteristics (Ta=25oC, unless otherwise noted)
5.0
4.5 -50mA
4.0 -40mA
3.5 -30mA
10
VCE=-2V
1
Ta=85OC
3.0
2.5
-20mA
0.1
Ta=25OC
2.0
1.5 -10mA
1.0
0.01
Ta=-45OC
-5mA
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE-Collector to Emitter Voltage(V)
Output characteristics
5000
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VBE-Base to Emitter Voltage(V)
Transfer characteristics
1000
500 Ta=85OC Ta=25OC
Ta=-45OC
50
Ta=85OC
100
Ta=25OC
Ta=-45OC
10
5
1E-3
0.01
0.1
1
IC-Collector Current(A)
DC current gain
10
100
80
60
40
20
0
0 25 50 75 100 125 150
Ambient Temperature(OC)
Power Derating
2
1
Duty = 0.5
1
1E-3
0.01
0.1
1
10
IC-Collector Current(A)
C-E saturation voltage vs. Collector current
10
100ms
1ms
10ms
1.0
100ms
1s
0.1
DC
SINGLE PULSE Ta = 25°C
0.01
0.1 1.0
10 100
COLLECTOR TO EMITTER VOLTAGE: VCE (V)
Safe operating area
0.2
0.1
0.1
0.05
0.02
0.01
10-4
PCM
t1
t2
1. Duty Cycle, D =
2. RthJA = 42°C/W
t1
t2
3. T JM - TA = PCM x ZthJA x RthJA
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Transient thermal response (Junction-to-Ambient)
100 600
Will Semiconductor Ltd. 3 Jul, 2012 - Rev.1.0



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Package outline dimensions
PDFN3x2-8L
WPT2N41
Symbol
A
b
c
D
D1
E
E1
E2
e
L
L1
L2
θ1
Will Semiconductor Ltd.
Min.
0.70
0.24
0.08
2.90
1.52
1.90
1.60
1.07
0.20
0.00
0o
Dimensions in Millimeters
Typ.
0.80
0.30
0.15
3.00
1.62
2.00
1.70
1.17
0.65 BSC
0.30
0.184MAX
5o
Max.
0.90
0.35
0.20
3.05
1.72
2.10
1.75
1.27
0.40
0.10
8o
4 Jul, 2012 - Rev.1.0



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