WFF740 Datasheet PDF - Wisdom technologies

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WFF740
Wisdom technologies

Part Number WFF740
Description N-Channel MOSFET
Page 7 Pages


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Wisdom Semiconductor
WFF740
N-Channel MOSFET
Features
RDS(on) (Max 0.55 )@VGS=10V
Gate Charge (Typical 38nC)
Improved dv/dt Capability, High Ruggedness
www.DataSheet4U.com100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Symbol
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
TO-220F
123
Absolute Maximum Ratings *( Drain current limited by junction temperature)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
400
10*
6.3*
40*
±25
450
13.4
5.5
44
0.35
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
2.86
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W



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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
400 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.50
IDSS Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125°C
-- --
-- --
IGSSF
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Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- --
-- --
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
VGS = 10 V, ID = 5.0 A
-- 0.44 0.55
VDS = 40 V, ID = 5.0 A
(Note 4)
--
9.0
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1570 2040
-- 150 195
-- 15 20
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 200V, ID = 10.0 A,
RG = 25
(Note 4, 5)
VDS = 320 V, ID = 10.0A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
25 60
75 160
115 240
70 150
38 50
8 --
13 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 10
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 40
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.0 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 10.0 A,
-- 225
dIF / dt = 100 A/µs
(Note 4) -- 1.59
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.9mH, IAS = 10.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 10.0A, di/dt 300µA/s, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC



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Typical Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
101 6.5 V
6.0 V
5.5 V
Bottom: 5.0 V
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100
10-1
10-1
Notes :
1. 250µs Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
2.4
2.0
VGS = 10V
1.6
VGS = 20V
1.2
0.8
0.4
Note : TJ = 25
0.0
0 5 10 15 20 25 30 35
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
100 25oC
10-1
2
-55oC
Notes :
1.
2.
2V5DS0µ=s40PVulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1.
2.
2V5GS0µ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 80V
VDS = 200V
8 VDS = 320V
6
4
2
Note : ID = 10 A
0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics



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Typical Characteristics (Continued)
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1.2
1.1
1.0
0.9 Notes:
1.
2.
IVDG=S
=0V
250µ
A
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102
101
100
10-1
100
Operation in This Area
is Limited by RDS(on)
10 µs
100 µs
1 ms
10 ms
DC
Notes :
1. TC = 25 oC
2.
3.
STJin=gl1e5P0uoClse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1.
2.
IVDG=S
= 10 V
5.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
100
D =0.5
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sing le pu lse
N otes :
1.
2.
3.
ZDθu JtCy(
TJM -
t) = 0.93 /W M
Fa
TC
ct
=
o r,
PD
MD*=Zt 1θ/
t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u are W a ve P u lse D ura tio n [se c]
101
Figure 11. Transient Thermal Response Curve



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