WFF640 Datasheet PDF - Wisdom technologies

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WFF640
Wisdom technologies

Part Number WFF640
Description N-Channel MOSFET
Page 7 Pages


WFF640 datasheet pdf
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Wisdom Semiconductor
WFF640
N-Channel MOSFET
Features
RDS(on) (Max 0.18 )@VGS=10V
Gate Charge (Typical 45nC)
Improved dv/dt Capability, High Ruggedness
www.DataSheet4U.com100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
Symbol
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
TO-220F
123
Absolute Maximum Ratings *( Drain current limited by junction temperature)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
200
18*
11.4*
72*
±25
250
13.9
5.5
43
0.35
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
2.89
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W



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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
200 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.20
IDSS Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
-- --
-- --
IGSSF
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Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- --
-- --
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 9.0 A
VDS = 40 V, ID = 9.0 A
(Note 4)
2.0 --
-- 0.155
-- 13
4.0
0.18
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1130 1470
-- 225 290
-- 80 105
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 100 V, ID = 18 A,
RG = 25
-- 21 55
-- 180 370
-- 110 230
(Note 4, 5)
--
100
210
VDS = 160 V, ID = 18A,
-- 45 58
VGS = 10 V
-- 8
--
(Note 4, 5) --
22
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 18
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 72
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 18 A,
dIF / dt = 100 A/µs
-- 160
(Note 4) -- 0.79
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.16mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 18A, di/dt 300µA/s, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC



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Typical Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
101
6.0 V
5.5 V
Bottom: 5.0 V
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100
10-1
10-1
Notes :
1. 250µs Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.0
0.8 VGS = 10V
0.6 VGS = 20V
0.4
0.2
Note : TJ = 25
0.0
0
10 20 30 40 50 60
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2500
2000
1500
1000
500
0
10-1
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
100 25oC
10-1
2
-55oC
Notes :
1.
2.
2V5DS0µ=s40PVulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1.
2.
2V5G0Sµ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 40V
10 VDS = 100V
8 VDS = 160V
6
4
2
Note : ID = 18 A
0
0 5 10 15 20 25 30 35 40 45 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics



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Typical Characteristics (Continued)
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1.2
1.1
1.0
0.9 Notes:
1.
2.
IVDG=S =2500Vµ
A
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by RDS(on)
102
100 µs
1 ms
101 10 ms
DC
100
10-1
100
Notes :
1. TC = 25 oC
2.
3.
STJin=gl1e5P0uoClse
101 102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1.
2.
IVDG=S
= 10 V
9.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
20
16
12
8
4
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
100
D =0.5
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sing le pu lse
N otes :
1.
2.
3.
Z
D
T
θu JtCy(
JM -
t) = 0.9
F a c to r,
TC = PD
/W
MD*=Zt 1θ/
M ax
t2
JC
(
t
)
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u are W a ve P u lse D ura tio n [se c]
Figure 11. Transient Thermal Response Curve
101



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