WFF2N60 Datasheet PDF - Wisdom technologies

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WFF2N60
Wisdom technologies

Part Number WFF2N60
Description N-Channel MOSFET
Page 7 Pages


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Wisdom Semiconductor
WFF2N60
N-Channel MOSFET
Features
RDS(on) (Max 5.0 )@VGS=10V
Gate Charge (Typical 9.5nC)
www.DataSheet4U.com Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
TO-220F
123
Absolute Maximum Ratings *( Drain current limited by junction temperature)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
2.0*
1.3*
6.0*
±30
120
5.4
4.5
23
0.18
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
5.5
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.



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WFF2N60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
www.DataSheet4U.com Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 1.0A
VGS =0 V, VDS =25V, f = 1MHz
VDD =300V, ID =2.0A, RG =25
(Note 4, 5)
VDS =480V, VGS =10V, ID =2.0A
(Note 4, 5)
Min
600
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
--V
0.6 - V/°C
- 10 uA
- 100 uA
- 100 nA
-
-100
nA
- 4.0
4.0 5.0
V
320 420
35 46
4.5 6.0
pF
8 30
23 60
25 60
28 70
9.5 13
1.6 -
4.0 -
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =2.0A, VGS =0V
IS=2.0A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 55mH, IAS =2.0A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 2.0A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
230
1.0
Max.
2.0
6.0
1.4
-
-
Unit.
A
V
ns
uC
Copyright@Wisdom Semiconductor Inc., All rights reserved.



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Typical Characteristics
www.DataSheet4U.com
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
100
6.0 V
5.5 V
Bottom: 5.0 V
10-1
10-2
10-1
Notes :
1. 250µs Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
18
15
VGS = 10V
12
VGS = 20V
9
6
3
Note : TJ = 25
0
0123456
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
600
400
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
200
0
10-1
Coss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100 150oC
10-1
2
25oC
-55oC
Notes :
1.
2.
V25DS0µ=s40PVulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
100
10-1
0.2
150
25
Notes :
1.
2.
2V5GS0µ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
Note : ID = 2.0 A
0
0 2 4 6 8 10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics



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Typical Characteristics (Continued)
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1.2
1.1
1.0
0.9 Notes:
1.
2.
IVDG=S =2500VµA
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
101 is Limited by RDS(on)
100 µs
1 ms
100 10 ms
DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2.
3.
STJin=gl1e5P0uolCse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1.
2.
IVDG=S
=10 V
1.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
2.0
1.6
1.2
0.8
0.4
0.0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
100 D =0.5
0 .2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
sin g le p ulse
N otes :
1.
2.
3.
Z
D
T
θu JtCy(
JM -
t) = 2.32 /W M
Fa
TC
ct
=
or,
PD
MD*=Zt 1θ/
t2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
Figure 11. Transient Thermal Response Curve



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