VTI640 Datasheet PDF - BLUE ROCKET ELECTRONICS

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VTI640
BLUE ROCKET ELECTRONICS

Part Number VTI640
Description N-CHANNEL MOSFET
Page 6 Pages


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VTI640
Rev.D Mar.-2016
DATA SHEET
描述 / Descriptions
TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features
RDS(on)的典型值是 0.15Ω,低电容,开关速度快。
Typical RDS(on)=0.15,low intrinsic capacitance Ciss, fast switching.
用途 / Applications
显示器监控,不间断电源,DC-DC 转换。
Monitor displays, UPS,DC-DC converters.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12 3
PIN1G
PIN 2D
PIN 3S
放大及印章代码 / hFE Classifications & Marking
见印章说明。 See Marking Instructions.
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VTI640
Rev.D Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Drain- gate Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
Total Power Dissipation
Insulation Withstand Voltage
Junction Temperature Range
Storage Temperature Range
符号
Symbol
VDS
VDGR
VGS
ID(Tc=25)
IDM
PTOT
VISO
Tj
Tstg
DATA SHEET
数值
Rating
200
200
±30
20
72
125
2500
150
-55150
单位
Unit
V
V
V
A
A
W
V
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Forward On Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
符号
Symbol
V(BR)DSS
VGS(th)
RDS(on)
IDSS
IGSS
VSD
Ciss
Coss
Crss
测试条件
Test Conditions
VGS=0V
ID=250μA
VDS=VGS
ID=250μA
VGS=10V ID=12A
VDS=200V
VGS=30V
VGS=-30V
VGS=0V
Tj=25
VGS=0V
VDS=0V
VDS=0V
ISD=12A
VGS=0V
f=1.0MHz
VDS=20V
最小值 典型值 最大值 单位
Min Typ Max Unit
200 V
2.0 3.0 4.0 V
0.15 0.18
10
100
-100
μA
nA
1.3 V
900
180 pF
70
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VTI640
Rev.D Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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VTI640
Rev.D Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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VTI640 datasheet pdf
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VTI640 pdf
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