VIT3045C-M3 Datasheet PDF - Vishay

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VIT3045C-M3
Vishay

Part Number VIT3045C-M3
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Page 5 Pages


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VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3
www.vishay.com
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.30 V at IF = 5.0 A
TO-220AB
TMBS ®
TO-262AA
K
VT3045C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VIT3045C
3
2
1
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A
TJ max.
Package
2 x 15 A
45 V
200 A
0.39 V
150 °C
TO-220AB, TO-262AA
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Operating junction and storage temperature range
TJ, TSTG
VT3045C
VIT3045C
45
30
15
200
-40 to +150
UNIT
V
A
A
°C
Revision: 21-Nov-13
1 Document Number: 89350
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
IF = 5.0 A
IF = 7.5 A
IF = 15 A
IF = 5.0 A
IF = 7.5 A
IF = 15 A
Reverse current per diode
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.42
0.44
0.49
0.30
0.33
0.39
-
17
MAX.
-
-
0.57
-
-
0.48
2000
50
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RJC
VT3045C
VIT3045C
1.6
0.85
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
VT3045C-M3/4W
1.89
TO-262AA
TO-220AB
TO-262AA
VIT3045C-M3/4W
VT3045CHM3/4W (1)
VIT3045CHM3/4W (1)
1.46
1.89
1.46
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
0
100
110 120 130 140
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
9
8 D = 0.5 D = 0.8
D = 0.3
7
6 D = 0.2
5
4 D = 0.1
3
D = 1.0
T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 21-Nov-13
2 Document Number: 89350
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3
www.vishay.com
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6
Instantaneous Forward Voltage (V)
0.7
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100 000
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 21-Nov-13
3 Document Number: 89350
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
PIN
123
0.635 (16.13)
0.625 (15.87)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.411 (10.45) MAX.
TO-262AA
30° (TYP.)
(REF.)
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
123
0.510 (12.95)
0.470 (11.94)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
Revision: 21-Nov-13
4 Document Number: 89350
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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Vishay
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