UTD36N03 Datasheet PDF - Unisonic Technologies

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UTD36N03
Unisonic Technologies

Part Number UTD36N03
Description N-CHANNEL ENHANCEMENT MODE Power MOSFET
Page 5 Pages


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UNISONIC TECHNOLOGIES CO., LTD
UTD36N03
N-CHANNEL
ENHANCEMENT MODE
FEATURES
* RDS(ON) < 17m@VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTD36N03L-TA3-T
UTD36N03G-TA3-T
UTD36N03L-TN3-T
UTD36N03G-TN3-T
UTD36N03L-TN3-R
UTD36N03G-TN3-R
Package
TO-220
TO-252
TO-252
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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UTD36N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
30 V
±20 V
Continuous Drain Current
Pulsed Drain Current (Note 1)
ID 43.4 A
IDM
173.6
A
Power Dissipation
TO-220
TO-252
PD
1.9 W
1.6 W
Junction Temperature
Storage Temperature
TJ
TSTG
+175
-55 ~ +175
°С
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
TO-220
TO-252
SYMBOL
θJA
RATINGS
62.5
75
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS =0V, ID =250 µA
VDS =24V, VGS =0V
VGS = ±20V, VGS =0V
ON CHARACTERISTICS
Gate-Threshold Voltage
Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250 µA
VGS =4.5V, ID =12A
VGS=10 V, ID =25 A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25 V, VGS =0V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS =15 V, VGS =10V,
RG =10, RL =0.6
VDS =15V,VGS =10V,ID =36 A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=25A, VGS=0V
Maximum Continuous Drain-Source
Diode Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width 300us, duty cycle 2%.
VR=15V,IF=IS, dIF/dt=100A/μs
MIN TYP MAX UNIT
30 V
0.05 1 µA
10 100 nA
1 1.5 2
V
18
14
22
17
m
690
160 pF
110
6
10
33
ns
19
18.5
4.2 nC
2.9
0.97 1.2 V
43.4
173.6
A
15 18 ns
2 3 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTD36N03
TYPICAL CHARACTERISTICS
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTD36N03
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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