UT6898 Datasheet PDF - Unisonic Technologies

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UT6898
Unisonic Technologies

Part Number UT6898
Description N-CHANNEL ENHANCEMENT Power MOSFET
Page 5 Pages


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UNISONIC TECHNOLOGIES CO., LTD
UT6898
N-CHANNEL ENHANCEMENT
DESCRIPTION
The UT6898 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON)<18 m@ VGS=4.5V, ID=9.4A
* RDS(ON)<14 m@ VGS=2.5V, ID=8.3A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
(7) (8)
D1
(5) (6)
D2
(2) (4)
G1 G2
Power MOSFET
S1 S2
(1) (3)
ORDERING INFORMATION
Ordering Number
UT6898G-S08-R
Note: Pin Assignment: G: Gate
D: Drain
Package
SOP-8
S: Source
Pin Assignment
12345678
Packing
S G S G D D D D Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UT6898
MARKING
PIN CONFIGURATION
Power MOSFET
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www.unisonic.com.tw
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UT6898
Power MOSFET
SOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current
ID 9.4 A
Pulsed Drain Current
IDM 38 A
Maximum Power Dissipation
PD 2 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Case
SYMBOL
θJC
MIN
TYP
40
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
MAX
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
On State Drain Current
Drain-Source On-State Resistance
BVDSS
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
VGS=0V, ID=250µA
VGS=0V, VDS=16V
VGS=±12V, VDS=0V,
VDS=VGS, ID=250µA
VGS=4.5 V, VDS=5V,
VGS=4.5V, ID=9.4A
VGS=2.5V, ID=8.3A
20 V
1 µA
±100 nA
0.5 1 1.5 V
19 A
10
13
14
18
m
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 1)
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS=0V, VDS=10V, f=1MHz
VGS=4.5V,VDS=10V,ID=1A
RGEN=6
VGS=4.5V, VDS=10V,
ID=9.4A
1821
440
208
pF
pF
pF
10 20 ns
15 27 ns
34 55 ns
16 29 ns
16 23 nC
3 nC
4 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS=1.3A (Note 1)
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.3
0.7 1.2
V
A
Notes: 1. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
2. The diode connected between the gate and source serves only as protection against ESD. No gate
overvoltage rating is implied
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT6898
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
1400
1200
1000
800
600
400
200
0 0 200 400
600 800
Source to Drain Voltage,VSD (mV)
Power MOSFET
Switching Time Waveforms
VDS 90%
10%
VGS
tD(ON)
tTHL
tD(OFF)
tTLH
Drain-Source
On-State Resistance Characteristics
12
10 4.5V
8
VGS=2.5V
6
4
2
0
0 50 100 150 200
Drain to Source Voltage, VDS (mV)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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