UT60T03 Datasheet PDF - Unisonic Technologies


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UT60T03
Unisonic Technologies

Part Number UT60T03
Description 45A N-CHANNEL ENHANCEMENT MODE Power MOSFET
Page 7 Pages

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UNISONIC TECHNOLOGIES CO., LTD
UT60T03
30V, 45A N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UT60T03 can provide excellent RDS(ON) and low gate
charge by using UTC’s advanced trench technology.
FEATURES
* Very simple drive requirement
* Very low gate charge
* Fast switching
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
Pin Assignment
12345678
Packing
UT60T03L-TF3-T
UT60T03G-TF3-T
TO-220F G D S - - - - -
Tube
UT60T03L-TF3-R
UT60T03G-TF3-R
TO-220F G D S - - - - - Tape Reel
UT60T03L-TN3-R
UT60T03G-TN3-R
TO-252 G D S - - - - - Tape Reel
UT60T03L-TQ2-R
UT60T03G-TQ2-R
TO-263 G D S - - - - - Tape Reel
UT60T03L-TQ2-T
UT60T03G-TQ2-T
TO-263 G D S - - - - -
Tube
- UT60T03G-K08-5060-R DFN-8(5×6) S S S G D D D D Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UT60T03
MARKING
TO-220F / TO-252 / TO-262
Power MOSFET
DFN-8(5×6)
PIN CONFIGURATION
Source 1
Source 2
Source 3
Gate 4
Top View
8 Drain
7 Drain
6 Drain
5 Drain
Gate
Source
Source
Source
4
3
2
1
DFN-8(5×6)
Bottom
View
5 Drain
6 Drain
7 Drain
8 Drain
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT60T03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 30 V
Gate-Source Voltage
VGSS ±20 V
Continuous Drain Current
ID 45 A
Pulsed Drain Current (Note 2)
IDM 120 A
TO-220F
56
Power Dissipation (TC=25°C)
TO-252
TO-263
PD
44
54
W
DFN-8(5×6)
21
Junction Temperature
TJ
+150
°C
Strong Temperature
TSTG
-55 ~ +175
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2 .Pulse width limited by safe operating area.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F
TO-252
TO-263
DFN-8(5×6)
TO-220F
TO-252
TO-263
DFN-8(5×6)
SYMBOL
θJA
θJC
RATINGS
62.5
110
62
46
2.66
3.4
1.24
6
UNIT
°C/W
°C/W
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www.unisonic.com.tw
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UT60T03
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0 V, ID=250µA
30
V
Drain-Source Leakage Current
IDSS VDS=30V, VGS=0V
1 µA
Gate-Body Leakage Current
IGSS
VGS=±20 V
±100 nA
Breakdown Voltage Temperature Coefficient BVDSS/TJ Reference to 25°C, ID=1mA
0.026
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
1
3V
Static Drain-Source On-Resistance(Note 1)
RDS(ON)
VGS=10V, ID=20A
VGS=4.5V, ID=15A
12
25
m
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V,
f=1.0MHz
1135
200
135
pF
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=20V, VGS=4.5V,
ID=20A (Note 1)
VGS=10V, VDS=15V,
RD=0.75, ID=20A,
RG=3.3(Note 1)
11.6
3.9 nC
7
8.8
57.5
18.5
ns
6.4
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage (Note 1)
VSD IS=45A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
tRR IS=20A, VGS=0V,
QRR dI/dt=100A/μs
Note: 1.Pulse width 300us , duty cycle 2%.
2. Essentially independent of operating temperature
1.3
23.3
16
V
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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