UT60N03 Datasheet PDF - Unisonic Technologies

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UT60N03
Unisonic Technologies

Part Number UT60N03
Description N-CHANNEL LOGIC LEVEL MOSFET
Page 6 Pages


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UNISONIC TECHNOLOGIES CO., LTD
UT60N03
30V, 60A N-CHANNEL LOGIC
LEVEL MOSFET
Power MOSFET
DESCRIPTION
This device employs advanced MOSFET technology and features
low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the
overall efficiency of DC/DC converters and allows operation to higher
switching frequencies.
FEATURES
* RDS(ON) < 23m@ VGS=10V, ID=30A
* RDS(ON) < 30m@ VGS=4.5V, ID=19A
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
11
TO-220
1
TO-252
TO-251
1
TO-252D
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT60N03L-TA3-T
UT60N03G-TA3-T
UT60N03L-TM3-T
UT60N03G-TM3-T
UT60N03L-TN3-R
UT60N03G-TN3-R
UT60N03L-TND-R
UT60N03G-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-251
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UT60N03
MARKING
Power MOSFET
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UT60N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30 V
Gate-Source Voltage
Continuous Drain Current (VGS=10V)
VGSS
ID
±20 V
60 A
Power Dissipation
Derate above 25°C
TO-220
TO-251/TO-252
TO-220
TO-251/TO-252
PD
60
45
W
0.4
0.37
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
TO-220
TO-251/TO-252
Junction to Case
TO-220
TO-251/TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
100
2.5
2.73
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT60N03
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
30 V
Drain-Source Leakage Current
IDSS VDS=25V, VGS=0V
1 µA
Gate-Source Leakage Current
IGSS VDS=0V, VGS=±20V
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
1 3V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=30A
VGS=4.5V, ID=19A
14
24
23
30
m
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=15V, VGS=0V, f=1MHz
900 pF
210 pF
Reverse Transfer Capacitance
CRSS
90 pF
SWITCHING PARAMETERS
Turn-ON Time
t(ON)
90 ns
Turn-ON Delay Time
tD(ON)
11 ns
Turn-ON Rise Time
Turn-OFF Time
tR
t(OFF)
VDD=15V, ID=7.9A, RL=18, VGS=4.5V
49 ns
83 ns
Turn-OFF Delay Time
tD(OFF)
27 ns
Turn-OFF Fall-Time
tF
28 ns
Turn-ON Time
t(ON)
48 ns
Turn-ON Delay Time
tD(ON)
6 ns
Turn-ON Rise Time
Turn-OFF Time
tR
t(OFF)
VDD=15V, ID=7.9A, RL=18, VGS=10V
26 ns
120 ns
Turn-OFF Delay Time
tD(OFF)
52 ns
Turn-OFF Fall-Time
tF
28 ns
Total Gate Charge
5V
10V
QG
VGS=0V~5V,VDD=15V,ID=19A IG=1.0mA
VGS=0V~10V,VDD=15V,ID=19A,IG=1.0mA
18
9.6
28
14
nC
Threshold Gate Charge
QG(TH) VGS=0V~1V,VDD=15V,ID=19A IG=1.0mA
1.0 1.5 nC
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
VDD=15V, ID=19A IG=1.0mA
3.4 nC
3.4 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=19A
ISD=10A
1.25
1.0
V
Reverse Recovery Time
Reverse Recovery Charge
trr
QRR
ISD=9A, dIS/dt =100A/s,
58 ns
70 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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