UT50N03 Datasheet PDF - Unisonic Technologies


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UT50N03
Unisonic Technologies

Part Number UT50N03
Description N-CHANNEL POWER MOSFET
Page 6 Pages

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UNISONIC TECHNOLOGIES CO., LTD
UT50N03
50A, 30V N-CHANNEL
POWER MOSFET
FEATURES
* RDS(ON) < 14 m@ VGS = 10 V, ID = 30 A
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT50N03L-TM3-T
UT50N03G-TM3-T
UT50N03L-TN3-R
UT50N03G-TN3-R
UT50N03L-TND-R
UT50N03G-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tape Reel
Tape Reel
MARKING
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UT50N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID 50 A
Pulsed Drain Current (Note 2)
IDM 180 A
Single Pulsed Avalanche Energy (Note 3)
EAS
45 mJ
Power Dissipation
PD 50 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 0.1mH, IAS = 30A, VDD = 50V, RG = 25 , Starting TJ = 25°C.
THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient (Note 3)
θJA
Junction to Case
θJC
Note: Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu
RATINGS
71.4
3.0
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
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UT50N03
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0V, ID =250 µA
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS VDS=20V, VGS =0V
IGSS VDS =0V, VGS = ±20V
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH) VDS =VGS, ID =250 µA
Drain-Source On-State Resistance
RDS(ON)
VGS = 11.5V
VGS = 10 V
VGS = 4.5V
ID = 30 A
ID = 15 A
ID = 30 A
ID = 30 A
ID = 15 A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=12V, VGS =0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(ON)
tR
tD(OFF)
tF
VGS = 4.5 V, VDS =15 V,
ID = 30 A, RG = 3.0
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(ON)
tR
tD(OFF)
tF
VGS = 11.5 V, VDS =15 V,
ID = 30 A, RG = 3.0
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
QG
QGS
QGD
QG
QGS
QGD
VDS =15V,VGS =4.5V,
ID =30 A
VDS =15V,VGS =11.5V,
ID =30 A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=30 A, VGS =0V
Maximum Continuous Drain-Source Diode
Forward Current
IS
Reverse Recovery Time
trr IS = 30 A, VGS = 0 V,
Reverse Recovery Charge
QRR dI /dt = 100 A/μs
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse Test: Pulse Width300µs, Duty Cycle2%
30
1.0
TYP MAX UNIT
1.5
±100
V
µA
nA
1.7 2.0
12
11.7
12.5 14
21
19 23
V
m
m
m
m
m
610 750
300
125
pF
pF
pF
8.2
9.6
11.2
6.8
5.0
84
15
4.0
6.0 10
1.9
3.7
15
1.9
3.9
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
nC
nC
0.85 1.1
45
24
14
V
A
ns
nC
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www.unisonic.com.tw
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UT50N03
TYPICAL CHARACTERISTICS
Power MOSFET
0.065
0.055
0.045
On-Resistance versus Gate-to-
Source Voltage
ID=15A
TJ=25
0.035
0.025
0.015
0.005
2
3 4 5 6 7 8 9 10
Gate-to-Source Voltage,VGS (V)
0.030
0.025
0.020
On-Resistance versus Drain Current
and Gate Voltage
TJ=25
VGS=4.5V
0.015
0.010
VGS=10V
0.005
0
10
20 30 40
Drain Current,ID (A)
50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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