UT5003Z Datasheet PDF - Unisonic Technologies


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UT5003Z
Unisonic Technologies

Part Number UT5003Z
Description DUAL ENHANCEMENT MODE
Page 7 Pages

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UNISONIC TECHNOLOGIES CO., LTD
UT5003Z
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UT5003Z can provide excellent RDS (ON) and low gate charge
by using UTC’s advanced trench technology. This device is suitable
for use as a load switch or in PWM applications.
FEATURES
* N-Channel: 30V, 7A
RDS(ON) < 27.5m@ VGS=10V, ID=7A
RDS(ON) < 40m@ VGS=4.5V, ID=6A
* P-Channel: -30V, -5A
RDS(ON) < 45m@ VGS=-10V, ID=-5A
RDS(ON) < 80m@ VGS=-4.5V, ID=-4A
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
UT5003ZG-S08-R
Note: Pin Assignment: G: Gate
D: Drain
Package
SOP-8
S: Source
Pin Assignment
12345678
S1 G1 S2 G2 D2 D2 D1 D1
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UT5003Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
N-Channel:
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note3)
Pulsed Drain Current (Note3)
Power Dissipation
Junction Temperature
Storage Temperature
TC=25°C
TC=25°C
SYMBOL
VDSS
VGSS
ID
IDM
PD
TJ
TSTG
RATINGS
30
±20
7
20
2
+150
-55 ~ +150
UNIT
V
V
A
A
W
°C
°C
P-Channel:
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS -30 V
Gate-Source Voltage
VGSS ±20 V
Continuous Drain Current (Note3)
TC=25°C
ID
-5 A
Pulsed Drain Current (Note3)
TC=25°C
IDM
-20 A
Power Dissipation
PD 2 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note3)
SYMBOL
θJA
RATINGS
62.5
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
UNIT
°C/W
N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250uA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
30 V
1 uA
±5 uA
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
VGS(TH)
RDS(ON)
VDS=VGS, ID=250uA
VGS=10V, ID=7A
VGS=4.5V, ID=6A
1 1.5 2.5 V
20.5 27.5 m
30 40 m
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=15V, f=1MHz
680
105
75
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note2)
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS=10V, VGS=10V, ID1A,
RG=3
VDS=0.5*BVDSS, VGS=10V,
ID=7A
4.6 7 ns
4 6 ns
20 30 ns
5 8 ns
14 nC
1.9 nC
3.3 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2) VSD IS=1A, VGS=0V
Diode Continuous Forward Current
IS
1V
1.3 A
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UT5003Z
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
P-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS VGS=0V, ID=-250uA
-30
V
IDSS VDS=-24V, VGS=0V
-1 uA
IGSS VDS=0V, VGS=±20V
±5 uA
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
-1 -1.5 -2.5 V
37.5 45 m
62 80 m
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=-15V, f=1MHz
780
145
79
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note2)
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS=-10V, VGS=-10V,
ID1A, RG=3
VDS=0.5×BVDSS, VGS=-10V,
ID=-5A
7.7 11.5
5.7 8.5
20 30
9.5 14
15.1
2.1
4.0
ns
ns
ns
ns
nC
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2) VSD IS=-1A, VGS=0V
Diode Continuous Forward Current
IS
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width 300us, duty cycle 2%.
3. Surface Mounted on 1in 2 pad area, t 10sec.
-1 V
-1.3 A
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www.unisonic.com.tw
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UT5003Z
TYPICAL CHARACTERISTICS
N-CHANNEL:
On-Region Characteristics
30
10V 6.0V
25 5.0V
4.5V
4V
20
15
3.5V
10
5 VGS=3V
0
01 2 34 5
Drain Source Voltage,VDS (V)
Power MOSFET
On-Resistance Variation with Drain
2.4 Current and Gate Voltage
VGS=3.5V
2.2
2.0
4V
1.8
1.6 4.5V
1.4 5.0V
1.2 6.0V
1.0 7.0V 10V
0.8
0
6 12 18 24
Drain Current,ID (A)
30
Transfer Characteristics
30
VDS=10V
25
25
TA=-55
20
15
125
10
5
0
1 1.5 2.0 2.5 3.0 3.5
Gate-to-Source Voltage,VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Body Diode Forward Voltage Variation with
100 Source Current and Temperature
VGS=0V
10 TA=125
1
0.1
0.01
25
-55
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Body Diode Forward Voltage,VSD (V)
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