UT3006 Datasheet PDF - Unisonic Technologies

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UT3006
Unisonic Technologies

Part Number UT3006
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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UNISONIC TECHNOLOGIES CO., LTD
UT3006
55A, 30V N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
DESCRIPTION
The UTC UT3006 is an N-channel enhancement MOSFET
using UTC’s advanced technology to provide the customers with
perfect RDS(ON), cost-effectiveness and high switching speed.
This UTC UT3006 is suitable for DC/DC converters, etc.
FEATURES
* RDS(ON)<9m@ VGS=10V, ID=30A
* High Switching Speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
Pin Assignment
12345678
Packing
UT3006L-TN3-R
UT3006G-TN3-R
TO-252 G D S - - - - - Tape Reel
- UT3006G-K08-5060-R DFN-8(5×6) S S S G D D D D Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING
TO-252
DFN-8(5×6)
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UT3006
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 30 V
Gate-Source Voltage
VGSS ±20 V
Drain Current
Continuous
VGS@10V
TC=25°C
TC=100°C
ID
55 A
39 A
Pulsed (Note 2)
IDM
160 A
Power Dissipation (TC=25°C)
TO-252
DFN-8(5×6)
PD
41 W
21
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse test.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
TO-252
DFN-8(5×6)
TO-252
DFN-8(5×6)
SYMBOL
θJA
θJC
RATINGS
110
46
3
6
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VDS=0V, VGS=+20V
VDS=0V, VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note)
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=30A
VGS=4.5V, ID=20A
VDS=10V, ID=30A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note)
Gate to Source Charge
Gate to Drain Charge
Gate Resistance
Turn-ON Delay Time (Note)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
RG
tD(ON)
tR
tD(OFF)
tF
VGS=4.5V, VDS=24V, ID=30A
f=1.0MHz
VDS=15V, ID=30A, RG=3.3,
VGS=10V, RD=0.5
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD IS=30A, VGS=0V
Body Diode Reverse Recovery Time (Note)
Body Diode Reverse Recovery Charge
trr IS=10A, VGS=0V,
QRR dI/dt=100A/µs
Note: Pulse test.
MIN TYP MAX UNIT
30 V
10 µA
+100 nA
-100 nA
1 3V
9 m
16 m
42 S
700 1120 pF
215 pF
155 pF
13 21
2.5
9.5
1.9
8
85
20.5
10
nC
nC
nC
ns
ns
ns
ns
1.2 V
23 ns
14 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT3006
TEST CIRCUITS AND WAVEFORMS
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Switching Time Waveform
Power MOSFET
VG
4.5V
QGS
QG
QGD
Charge
Gate Charge Waveform
Q
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT3006
TYPICAL CHARACTERISTICS
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT3006 pdf

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