UT108N03 Datasheet PDF - Unisonic Technologies

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UT108N03
Unisonic Technologies

Part Number UT108N03
Description N-CHANNEL POWER MOSFET
Page 4 Pages


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UNISONIC TECHNOLOGIES CO., LTD
UT108N03
30V, 108A N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
As advanced N-channel level power MOSFET, the UT108N03 is
produced using UTC’s advanced trench technology, which has been
specially tailored to minimize the on-resistance and maintain low
gate charge for superior switching performance.
FEATURES
* RDS(ON) < 5.3m@VGS = 10 V, ID = 25 A
* Low Capacitance
* Optimized Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
SYMBOL
2.Drain
1
TO-220
1
TO-252
1
TO-251
1
TO-252D
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT108N03L-TA3-T
UT108N03G-TA3-T
UT108N03L-TM3-T
UT108N03G-TM3-T
UT108N03L-TN3-R
UT108N03G-TN3-R
UT108N03L-TND-R
UT108N03G-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-251
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
Tape Reel
UT108N03L-TA3-T
(1)Packing Type
(1) R: Tape Reel, T: Tube
(2) TA3: TO-220, TM3: TO-251, TN3: TO-252
(2)Package Type
TND: TO-252D
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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UT108N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy (Note 3)
TO-220
VDSS
VGSS
ID
IDM
EAS
30 V
±20 V
108 A
432 A
580 mJ
107
Power Dissipation
TO-251/TO-252
TO-252D
PD
60 W
Junction Temperature
TJ
+150
°C
Strong Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. tP10μs, pulsed, TA=25°C
3. VGS=10V, TJ=25°C, ID=35A, VS25V, tP=0.25ms, RGS=50
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-251/TO-252
TO-252D
TO-220
Junction to Case
TO-251/TO-252
TO-252D
SYMBOL
θJA
θJC
RATINGS
62.5
100
1.4
2.5
UNIT
°C /W
°C /W
°C /W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT108N03
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=30V, VGS=0V
VDS=0V, VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=1mA
VGS=10V, ID=25A
VGS=5V, ID=25A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=15V, RG=10, VGS=5V,
RD=0.6, ID =1A
VDD =15V, VGS =5V, ID =40A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=108A, VGS=0 V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM (Note)
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr IS=20A, dIS/dt=-100A/μs,
QRR VGS=0V
Note: tP10μs, pulsed
MIN
30
1
TYP
0.05
0.02
4.2
2900
500
350
60
100
650
300
310
50
90
34
27
MAX UNIT
V
1 µA
100 nA
3V
5.3 m
6.6 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.25 V
432 A
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT108N03
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
0
0 10 20 30 40 50
Drain-Source Breakdown Voltage, BVDSS(V)
Power MOSFET
Drain Current vs. Gate Threshold Voltage
1200
1000
800
600
400
200
0
0 0.5 1 1.5 2 2.5
Gate Threshold Voltage, VTH (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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