UT100N03 Datasheet PDF - Unisonic Technologies


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UT100N03
Unisonic Technologies

Part Number UT100N03
Description N-CHANNEL POWER MOSFET
Page 8 Pages

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UNISONIC TECHNOLOGIES CO., LTD
UT100N03
100A, 30V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UT100N03 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation with
low gate voltages. This device is suitable for use as a load
switch or in PWM applications.
FEATURES
* RDS(ON) < 5.3m@VGS=10 V, ID =50 A
* RDS(ON) < 8.0m@VGS=4.5 V, ID =40 A
SYMBOL
Drain
1
TO-220
1
TO-251
1
TO-263
Power MOSFET
1
TO-220F
1
TO-252
1
DFN-8(5x6)
Gate
Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
Pin Assignment
12345678
UT100N03L-TA3-T
UT100N03G-TA3-T
TO-220 G D S - - - - -
UT100N03L-TF3-T
UT100N03G-TF3-T
TO-220F G D S - - - - -
UT100N03L-TM3-T
UT100N03G-TM3-T
TO-251 G D S - - - - -
UT100N03L-TN3-R
UT100N03G-TN3-R
TO-252 G D S - - - - -
UT100N03L-TND-R
UT100N03G-TND-R
TO-252D G D S - - - - -
UT100N03L-TQ2-T
UT100N03G-TQ2-T
TO-263 G D S - - - - -
UT100N03L-TQ2-R
UT100N03G-TQ2-R
TO-263 G D S - - - - -
- UT100N03G-K08-5060-R DFN-8(5×6) S S S G D D D D
Note: Pin Assignment: G: Gate D: Drain S: Source
Packing
Tube
Tube
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Tape Reel
Tape Reel
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Tape Reel
Tape Reel
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UT100N03
MARKING
TO-251 / TO-252 / TO-252D / TO-263
Power MOSFET
DFN-8(5×6)
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www.unisonic.com.tw
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UT100N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulsed Avalanche Current (Note 3)
Single Pulsed Avalanche Energy (Note 3)
TO-220/TO-263
VDSS
VGSS
ID
IDM
IAS
EAS
30 V
±20 V
100 A
400 A
35 A
875 mJ
100
TO-220F
36
Power Dissipation
TO-251/TO-252
TO-252D
PD
50 W
DFN-8(5×6)
21
Junction Temperature
TJ
+175
°С
Strong Temperature
TSTG
-55 ~ +175
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature
3. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25, Starting TJ = 25°С.
THERMAL DATA
PARAMETER
SYMBOL
TO-220/TO-220F
TO-263
Junction to Ambient
TO-251/TO-252
TO-252D
θJA
DFN-8(5×6)
TO-220/TO-263
TO-220F
Junction to Case
TO-251/TO-252
θJC
TO-252D
DFN-8(5×6)
Notes: 1. Maximum under Steady State conditions is 90 °C/W.
2. Surface Mounted on 1" x 1" FR4 board.
RATINGS
62.5
110
40.3 (Note 1, 2)
1.5
3.47
3
6 (Note 1, 2)
UNIT
°С/W
°С/W
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www.unisonic.com.tw
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UT100N03
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
Drain-Source Leakage Current
IDSS VDS=30 V,VGS =0 V
Gate-Source Leakage Current
IGSS VDS =0 V, VGS = ±20 V
ON CHARACTERISTICS(Note2)
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
Static Drain-Source On-Resistance
RDS(ON)
VGS =10 V, ID =50 A
VGS =4.5 V, ID =40 A
DYNAMIC PARAMETERS(Note3)
Input Capacitance
Output Capacitance
CISS
COSS
VDS =15V, VGS =0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS(Note3)
Total Gate Charge
Gate Source Charge
QG
QGS VDS =15V, VGS =5V, ID =16A
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=15V, ID =1A, RGEN =6
VGS =10 V
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=20 A,VGS=0 V
Drain-Source Diode Forward Current
IS
Notes: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
2. Guaranteed by design, not subject to production testing.
Power MOSFET
MIN TYP MAX UNIT
30 V
1 µA
±100 nA
1 3V
3.05 5.3
4.2 8
m
9500
800
300
pF
50 65
20.8
19
25.7 50
10 20
128 200
34 70
nC
ns
1.5 V
90 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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