UPD5759T6J Datasheet PDF - Renesas

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UPD5759T6J
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Part Number UPD5759T6J
Description Low Noise and High Gain Amplifier IC
Page 7 Pages


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μPD5759T6J
Low Noise and High Gain Amplifier IC
for Impedance Converter of Microphone
Preliminary Data Sheet
R09DS0018EJ0100
Rev.1.00
Apr 18, 2011
DESCRIPTION
The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret
condenser microphone. This device exhibits low noise and high voltage gain characteristics.
The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.
FEATURES
Low noise
: NV = 98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ
: NV = 99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ
High gain
: GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ
: GV = +11.0 dB TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ
Low input capacitance
: Cinput = 2.0 pF TYP. @VDD = 2.0 V, RL = 2.2 kΩ
Low consumption current
: IDD = 310 μA TYP. @VDD = 2.0 V, RL = 2.2 kΩ
High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)
Built-in the capacitor for RF noise immunity
High ESD voltage
APPLICATIONS
Microphone, Sensor etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
μPD5759T6J-E4 μPD5759T6J-E4-A 3-pin thin-type
6Z
lead-less minimold
(Pb-Free)
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5759T6J
Supplying Form
Embossed tape 8 mm wide
Pin 3 face the perforation side of the tape
Qty 10 kpcs/reel
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0018EJ0100 Rev.1.00
Apr 18, 2011
Page 1 of 5
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UPD5759T6J datasheet pdf
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