UPD5756T6N Datasheet PDF - Renesas

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UPD5756T6N
Renesas

Part Number UPD5756T6N
Description SiGe BiCMOS Integrated Circuit
Page 17 Pages


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μPD5756T6N
SiGe BiCMOS Integrated Circuit
Wide Band LNA IC with Through Function
Data Sheet
R09DS0026EJ0100
Rev.1.00
Oct 04, 2011
DESCRIPTION
The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV
application. This IC exhibits low noise figure and low distortion characteristics.
This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.
FEATURES
Low voltage operation
: VCC = 3.1 to 3.5 V (3.3 V TYP.)
Low current consumption
: ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode)
: ICC2 = 1 μA MAX. @VCC = 3.3 V (Bypass-mode)
Operation frequency
: f = 40 to 1 000 MHz
Low noise
: NF = 3.2 dB TYP. @f = 1 000 MHz (LNA-mode)
Low distortion
: IIP3 = +9 dBm TYP. @f1 = 500 MHz, f2 = 505 MHz (LNA-mode)
Low insertion loss
: Lins = 1.7 dB TYP. @f = 1 000 MHz (Bypass-mode)
High-density surface mounting : 6-pin plastic TSON (T6N) package (1.5 × 1.5 × 0.37 mm)
APPLICATIONS
Low noise amplifier for the digital TV system, etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
μPD5756T6N-E2
μPD5756T6N-E2-A
6-pin plastic
TSON (T6N)
(Pb-Free)
C4C
Embossed tape 8 mm wide
Pin 1, 6 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5756T6N
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 1 of 15
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μPD5756T6N
PIN CONNECTIONS, MARKING AND INTERNAL BLOCK DIAGRAM
(Top View)
(Top View)
(Bottom View)
1
61
Bias
Control
66
1
2
52
55
2
3
43
44
3
Pin No
1
2
3
4
5
6
Pin Name
Vcont
GND
INPUT
OUTPUT
Load
VCC
Remark Exposed pad : GND
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Supply Voltage
VCC TA = +25°C
4.0
Mode Control Voltage
Vcont TA = +25°C
4.0
Total Power Dissipation
Ptot TA = +85°C
Note
300
Operating Ambient Temperature
TA
40 to +85
Storage Temperature
Tstg
55 to +150
Input Power
Pin TA = +25°C,
+15
ZS = ZL = 75 Ω
Note: Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
Unit
V
V
mW
°C
°C
dBm
RECOMMENDED OPERATING RANGE
Parameter
Symbol
Supply Voltage
VCC
Mode Control Voltage (H)
Vcont (H)
Mode Control Voltage (L)
Vcont (L)
Operating Frequency
f
Operating Ambient Temperature
TA
Input Power (LNA-mode) Note
Pin
Input Power (Bypass-mode) Note
Pin
Note: TA = +25°C, ZS = ZL = 75 Ω
MIN.
3.1
1.0
0.1
40
40
TYP.
3.3
+25
MAX.
3.5
VCC
0.4
1 000
+85
0
+10
Unit
V
V
V
MHz
°C
dBm
dBm
ELECTRICAL CHARACTERISTICS 1 (DC Characteristics)
(TA = +25°C, VCC = 3.3 V, unless otherwise specified)
Parameter
Circuit Current 1
Circuit Current 2
Mode Control Current 1
Mode Control Current 2
Symbol
ICC1
ICC2
Icont1
Icont2
Test Conditions
Vcont = 3.3 V, No Signal (LNA-mode)
Vcont = 0 V, No Signal (Bypass-mode)
Vcont = 3.3 V, No Signal (LNA-mode)
Vcont = 0 V, No Signal (Bypass-mode)
MIN.
16
TYP.
25
0.01
50
0.01
MAX.
34
1
100
1
Unit
mA
μA
μA
μA
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 2 of 15
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μPD5756T6N
ELECTRICAL CHARACTERISTICS 2 (LNA-mode)
(TA = +25°C, VCC = Vcont = 3.3 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
Power Gain 1
GP1 f = 40 MHz, Pin = –20 dBm
10.5
Power Gain 2
GP2 f = 1 000 MHz, Pin = –20 dBm
10.5
Noise Figure 1
NF1 f = 40 MHz, ZS = ZL = 50 Ω, excluded
PCB and connector losses
Note
Noise Figure 2
NF2 f = 1 000 MHz, ZS = ZL = 50 Ω,
excluded PCB and connector losses
Note
Input Return Loss 1
RLin1 f = 40 MHz, Pin = –20 dBm
7
Input Return Loss 2
RLin2 f = 1 000 MHz, Pin = –20 dBm
7
Output Return Loss 1
RLout1 f = 40 MHz, Pin = –20 dBm
7
Output Return Loss 2
RLout2 f = 1 000 MHz, Pin = –20 dBm
7
Input 3rd Order Intercept Point
IIP3 f1 = 500 MHz, f2 = 505 MHz,
Pin = –20 dBm
+5
Note: Input PCB and connector losses : 0.03 dB (at 40 MHz), 0.10 dB (at 1 000 MHz)
TYP.
13
13
3.2
3.2
9
10
10
12
+9
MAX.
15.5
15.5
4.2
4.2
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dBm
ELECTRICAL CHARACTERISTICS 3 (Bypass-mode)
(TA = +25°C, VCC = 3.3 V, Vcont = 0 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
Insertion Loss 1
Lins1
f = 40 MHz, Pin = –10 dBm, excluded
PCB and connector losses
Note
Insertion Loss 2
Lins2
f = 1 000 MHz, Pin = –10 dBm,
excluded PCB and connector losses
Note
Input Return Loss 1
RLin1 f = 40 MHz, Pin = –10 dBm
10
Input Return Loss 2
RLin2 f = 1 000 MHz, Pin = –10 dBm
7
Output Return Loss 1
RLout1 f = 40 MHz, Pin = –10 dBm
10
Output Return Loss 2
RLout2 f = 1 000 MHz, Pin = –10 dBm
7
Input 3rd Order Intercept Point
IIP3 f1 = 500 MHz, f2 = 505 MHz,
Pin = –5 dBm
+20
Note: Input-output PCB and connector losses : 0.06 dB (at 40 MHz), 0.20 dB (at 1 000 MHz)
TYP.
0.5
1.7
26
8
25
8
+29
MAX.
1.5
2.5
Unit
dB
dB
dB
dB
dB
dB
dBm
STANDARD CHARACTERISTICS FOR REFERENCE 1 (LNA-mode)
(TA = +25°C, VCC = Vcont = 3.3 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Isolation 1
Isolation 2
Gain 1 dB Compression Output
Power
Symbol
ISL1
ISL2
PO (1 dB)
Test Conditions
f = 40 MHz, Pin = –20 dBm
f = 1 000 MHz, Pin = –20 dBm
f = 500 MHz
Reference Value
20
20
+10
Unit
dB
dB
dBm
STANDARD CHARACTERISTICS FOR REFERENCE 2 (Bypass-mode)
(TA = +25°C, VCC = 3.3 V, Vcont = 0 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Symbol
Test Conditions
Reference Value
Gain 1 dB Compression Output
Power
PO (1 dB) f = 500 MHz
Note
Note: The input-output power characteristic is not saturated up to +15 dBm of input power.
Unit
dBm
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 3 of 15
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μPD5756T6N
TEST CIRCUIT
Vcont
INPUT
10 000 pF
1
2
10 000 pF
3
6 VCC
270 nH
0.1μF
5
4
10 000 pF
OUTPUT
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 4 of 15
Free Datasheet http://www.datasheet4u.com/



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