UPD5750T7D Datasheet PDF - Renesas

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UPD5750T7D
Renesas

Part Number UPD5750T7D
Description SiGe BiCMOS Integrated Circuit
Page 16 Pages


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μPD5750T7D
SiGe BiCMOS Integrated Circuit
Wide Band LNA IC with Through Function
Data Sheet
R09DS0009EJ0100
Rev.1.00
Feb 24, 2011
DESCRIPTION
The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application. This
IC exhibits low noise figure and high power gain characteristics. The μPD5750T7D has an LNA pass-through function
(bypass function) to prevent the degradation of the received signal quality at the strong electric field, and achieve the
high reception sensitivity and low power consumption.
The package is a 6-pin WLBGA (Wafer Level Ball Grid Array) (T7D) suitable for surface mount.
This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.
FEATURES
Low voltage operation
: VCC = 1.8 V TYP.
Low mode control voltage
: Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.4 V
Low current consumption
: ICC = 3.1 mA TYP. @VCC = 1.8 V (LNA-mode)
: ICC = 1 μA MAX. @VCC = 1.8 V (Bypass-mode)
Low noise
: NF = 1.5 dB TYP. @VCC = 1.8 V, f = 470 MHz
(LNA-mode)
: NF = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz
High gain
: GP = 13.5 dB TYP. @VCC = 1.8 V, f = 470 MHz
(LNA-mode)
: GP = 12.5 dB TYP. @VCC = 1.8 V, f = 770 MHz
Low insertion loss
: Lins = 1.2 dB TYP. @VCC = 1.8 V, f = 470 MHz
(Bypass-mode)
: Lins = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz
High-density surface mounting : 6-pin WLBGA (0.73 × 0.48 × 0.26 mm)
Included protection circuit for ESD
APPLICATIONS
Low noise amplifier for the portable and mobile digital TV system, etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
μPD5750T7D-E4A μPD5750T7D-E4A-A 6-pin WLBGA
(T7D)
(Pb-Free)
A Embossed tape 8 mm wide
Pin A3, B3 face the perforation side of the tape
Qty 10 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5750T7D
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 1 of 14
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μPD5750T7D
PIN CONNECTIONS AND MARKING
(Top View)
(Bottom View)
A3 B3 B3 A3
A2 B2 B2 A2
A1 B1 B1 A1
INTERNAL BLOCK DIAGRAM
A1 A2 A3
Pin No
A1
A2
A3
B1
B2
B3
Pin Name
INPUT
GND1
OUTPUT
Vcont
GND2
VCC
Controller
B1 B2 B3
TRUTH TABLE
Vcont
Gain
H High
L Low
Remark “H” = Vcont (H), “L” = Vcont (L)
Mode
LNA-mode
Bypass-mode
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Supply Voltage
Mode Control Voltage
Operating Ambient Temperature
Storage Temperature
Input Power
VCC
Vcont
TA
Tstg
Pin
3.6
3.6
40 to +85
55 to +150
+30
V
V
°C
°C
dBm
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol MIN. TYP. MAX. Unit
Supply Voltage
Mode Control Voltage (H)
Mode Control Voltage (L)
Operating Frequency
Operating Ambient Temperature
Input Power (LNA-mode)
Input Power (Bypass-mode)
VCC
Vcont (H)
Vcont (L)
f
TA
Pin
Pin
1.6
1.0
0
50
40
1.8 2.0
V
VCC
V
0.4 V
1 800 MHz
+85 °C
+7 dBm
+15 dBm
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 2 of 14
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μPD5750T7D
ELECTRICAL CHARACTERISTICS 1 (DC Characteristics)
(TA = +25°C, VCC = 1.8 V, unless otherwise specified)
Parameter
Circuit Current 1
Circuit Current 2
Mode Control Current 1
Mode Control Current 2
Symbol
ICC1
ICC2
Icont1
Icont2
Test Conditions
Vcont = 1.8 V, No Signal (LNA-mode)
Vcont = 0 V, No Signal (Bypass-mode)
Vcont = 1.8 V, No Signal (LNA-mode)
Vcont = 0 V, No Signal (Bypass-mode)
MIN.
1.6
TYP.
3.1
20
MAX.
4.5
1
30
1
Unit
mA
μA
μA
μA
ELECTRICAL CHARACTERISTICS 2 (LNA-mode)
(TA = +25°C, VCC = Vcont = 1.8 V, ZS = ZL = 50 , unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN. TYP.
Power Gain 1
Power Gain 2
Noise Figure 1
Noise Figure 2
GP1 f = 470 MHz, Pin = –30 dBm, excluded 10.5 13.5
PCB and connector losses Note 1
GP2 f = 770 MHz, Pin = –30 dBm, excluded 9.5
PCB and connector losses Note 1
12.5
NF1 f = 470 MHz, excluded PCB and
connector losses
Note 2
1.5
NF2 f = 770 MHz, excluded PCB and
connector losses
Note 2
1.4
Output Return Loss 1
RLout1 f = 470 MHz, Pin = –30 dBm
6.5 8.5
Output Return Loss 2
Input 3rd Order Intercept Point 1
Input 3rd Order Intercept Point 2
RLout2
IIP31
IIP32
f = 770 MHz, Pin = –30 dBm
f1 = 470 MHz, f2 = 471 MHz,
Pin = –30 dBm
f1 = 770 MHz, f2 = 771 MHz,
Pin = –30 dBm
6.0 8.0
–15 –11
–12 –8
Notes: 1. Input-output PCB and connector losses : 0.20 dB (at 470 MHz), 0.27 dB (at 770 MHz)
2. Input PCB and connector losses : 0.10 dB (at 470 MHz), 0.14 dB (at 770 MHz)
MAX.
16.5
15.5
2.0
2.0
Unit
dB
dB
dB
dB
dB
dB
dBm
dBm
ELECTRICAL CHARACTERISTICS 3 (Bypass-mode)
(TA = +25°C, VCC = 1.8 V, Vcont = 0 V, ZS = ZL = 50 , unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
Insertion Loss 1
Insertion Loss 2
Lins1
Lins2
f = 470 MHz, Pin = –10 dBm, excluded
PCB and connector losses
Note
f = 770 MHz, Pin = –10 dBm, excluded
PCB and connector losses
Note
Input Return Loss 1
RLin1 f = 470 MHz, Pin = –10 dBm
10
Input Return Loss 2
RLin2 f = 770 MHz, Pin = –10 dBm
10
Output Return Loss 1
RLout1 f = 470 MHz, Pin = –10 dBm
10
Output Return Loss 2
RLout2 f = 770 MHz, Pin = –10 dBm
10
Input 3rd Order Intercept Point
IIP3 f1 = 770 MHz, f2 = 771 MHz,
Pin = –2.5 dBm
+25
Note: Input-output PCB and connector losses : 0.20 dB (at 470 MHz), 0.27 dB (at 770 MHz)
TYP.
1.2
1.4
17
14
17
14
+32
MAX.
2.0
2.0
Unit
dB
dB
dB
dB
dB
dB
dBm
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 3 of 14
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μPD5750T7D
STANDARD CHARACTERISTICS FOR REFERENCE 1 (LNA-mode)
(TA = +25°C, VCC = Vcont = 1.8 V, ZS = ZL = 50 Ω, unless otherwise specified)
Parameter
Symbol
Test Conditions
Isolation 1
ISL1 f = 470 MHz, Pin = –30 dBm
Isolation 2
ISL2 f = 770 MHz, Pin = –30 dBm
Input Return Loss 1
RLin1 f = 470 MHz, Pin = –30 dBm
Input Return Loss 2
RLin2 f = 770 MHz, Pin = –30 dBm
Input Impedance 1
Zin1 f = 470 MHz, Pin = –30 dBm
Input Impedance 2
Gain 1 dB Compression Output
Power 1
Gain 1 dB Compression Output
Power 2
Zin2 f = 770 MHz, Pin = –30 dBm
PO (1 dB)1 f = 470 MHz
PO (1 dB)2 f = 770 MHz
Note: Calibration reference plane : Device edge side
Note
Note
Reference Value
–30
–25
1.7
2.5
0.50 – j 2.01
0.36 – j 1.21
–12
–12
Unit
dB
dB
dB
dB
Ω
Ω
dBm
dBm
STANDARD CHARACTERISTICS FOR REFERENCE 2 (Bypass-mode)
(TA = +25°C, VCC = 1.8 V, Vcont = 0 V, ZS = ZL = 50 , unless otherwise specified)
Parameter
Gain 1 dB Compression Output
Power
Symbol
Test Conditions
PO (1 dB) f = 770 MHz
Reference Value
+6
Unit
dBm
TEST CIRCUIT
INPUT
A1 A2 A3
10 000 pF
Vcont
B1 B2 B3
10 000 pF
OUTPUT
VCC
1 000 pF
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 4 of 14
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