UPC3245TB Datasheet PDF - Renesas

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UPC3245TB
Renesas

Part Number UPC3245TB
Description SiGe BiCMOS Integrated Circuit
Page 24 Pages


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PreliminaryData Sheet
μPC3245TB
SiGe BiCMOS Integrated Circuit
Wideband Amplifier IC with 3-Step Gain Selection Function
R09DS0027EJ0100
Rev.1.00
Sep 26, 2011
DESCRIPTION
The μPC3245TB is a wideband amplifier IC mainly designed for SW Box and IF amplifier in DBS LNB application.
This IC has 3-step gain selection function.
This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.
FEATURES
Low voltage operation
Power gain
(High-gain mode)
(Middle-gain mode)
(Low-gain mode)
High linearity
(High-gain mode)
(Middle-gain mode)
(Low-gain mode)
: VCC = 3.0 to 3.6 V (3.3 V TYP.)
: GP = 20.5 dB TYP. @ f = 1.0 GHz
: GP = 22 dB TYP. @ f = 2.2 GHz
: GP = 14.5 dB TYP. @ f = 1.0 GHz
: GP = 15.5 dB TYP. @ f = 2.2 GHz
: GP = 8.5 dB TYP. @ f = 1.0 GHz
: GP = 9.5 dB TYP. @ f = 2.2 GHz
: PO (1 dB) = +10.5 dBm TYP. @ f = 1.0 GHz
: PO (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz
: PO (1 dB) = +11 dBm TYP. @ f = 1.0 GHz
: PO (1 dB) = +9.5 dBm TYP. @ f = 2.2 GHz
: PO (1 dB) = +10.5 dBm TYP. @ f = 1.0 GHz
: PO (1 dB) = +9.5 dBm TYP. @ f = 2.2 GHz
APPLICATIONS
SW Box, IF amplifier in DBS LNB, other L-band Amplifier etc.
ORDERING INFORMATION
Part Number Order Number
Package
Marking
Supplying Form
μPC3245TB-E3 μPC3245TB-E3-A 6-pin super minimold C4E
(Pb-Free)
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPC3245TB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0027EJ0100 Rev.1.00
Sep 26, 2011
Page 1 of 22
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μPC3245TB
PIN CONNECTIONS, MARKING AND INTERNAL BLOCK DIAGRAM
(Top View)
(Top View)
(Bottom View)
3 43 44 3
2 52 55 2
1
61
Controller
66
1
Pin No.
1
2
3
4
5
6
Pin Name
INPUT
GND
GND
OUTPUT
VCC
Gselect
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Supply Voltage
VCC TA = +25°C
4.0
Circuit Current
ICC TA = +25°C
60
Gain Selection Voltage
Power Dissipation
VGselect
PD
TA = +25°C
TA = +85°C
Note
4.0
166
Operating Ambient Temperature
TA
40 to +85
Storage Temperature
Tstg
55 to +150
Input Power
Pin TA = +25°C
+10
Note: Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
Unit
V
mA
V
mW
°C
°C
dBm
RECOMMENDED OPERATING RANGE
Parameter
Symbol
Supply Voltage
VCC
Gain Selection Voltage 1
(High-Gain Mode)
VGselect1
Gain Selection Voltage 2
VGselect2
(Low-Gain Mode)
Note
Operating Frequency
f
Operating Ambient Temperature
TA
Note: VCC 0.2 V VGselect2 VCC + 0.2 V
MIN.
3.0
0.2
3.0
0.25
40
TYP.
3.3
0
3.3
+25
MAX.
3.6
0.2
3.6
3
+85
Unit
V
V
V
GHz
°C
ELECTRICAL CHARACTERISTICS 1 (HIGH-GAIN MODE)
(TA = +25°C, VCC = 3.3 V, Gselect = GND, ZS = ZL = 50 Ω, unless otherwise specified)
Parameter
Circuit Current
Power Gain 1
Power Gain 2
Gain 1 dB Compression
Output Power 1
Gain 1 dB Compression
Output Power 2
Input Return Loss 1
Input Return Loss 2
Output Return Loss 1
Output Return Loss 2
Symbol
ICC
GP1
GP2
PO (1 dB) 1
Test Conditions
No input signal
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
f = 1.0 GHz
PO (1 dB) 2 f = 2.2 GHz
RLin1
RLin2
RLout1
RLout2
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
MIN.
22
18
19
+7.5
TYP.
27.5
20.5
22
+10.5
MAX.
33.5
23
25
Unit
mA
dB
dB
dBm
+5.5 +8.5
dBm
7 10.5 dB
10 17
dB
10 32
dB
7 11.5 dB
R09DS0027EJ0100 Rev.1.00
Sep 26, 2011
Page 2 of 22
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μPC3245TB
ELECTRICAL CHARACTERISTICS 2 (MIDDLE-GAIN MODE)
(TA = +25°C, VCC = 3.3 V, Gselect = Open, ZS = ZL = 50 Ω, unless otherwise specified)
Parameter
Circuit Current
Power Gain 1
Power Gain 2
Gain 1 dB Compression
Output Power 1
Gain 1 dB Compression
Output Power 2
Input Return Loss 1
Input Return Loss 2
Output Return Loss 1
Output Return Loss 2
Symbol
ICC
GP1
GP2
PO (1 dB) 1
Test Conditions
No input signal
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
f = 1.0 GHz
PO (1 dB) 2 f = 2.2 GHz
RLin1
RLin2
RLout1
RLout2
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
MIN.
22
12.5
13
+8
TYP.
27.5
14.5
15.5
+11
MAX.
33.5
16.5
18
Unit
mA
dB
dB
dBm
+6.5 +9.5
dBm
10 16.5 dB
7 12
dB
10 18.5 dB
7 15.5 dB
ELECTRICAL CHARACTERISTICS 3 (LOW-GAIN MODE)
(TA = +25°C, VCC = 3.3 V, Gselect = VCC, ZS = ZL = 50 Ω, unless otherwise specified)
Parameter
Circuit Current
Power Gain 1
Power Gain 2
Gain 1 dB Compression
Output Power 1
Gain 1 dB Compression
Output Power 2
Input Return Loss 1
Input Return Loss 2
Output Return Loss 1
Output Return Loss 2
Symbol
ICC
GP1
GP2
PO (1 dB) 1
Test Conditions
No input signal
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
f = 1.0 GHz
PO (1 dB) 2 f = 2.2 GHz
RLin1
RLin2
RLout1
RLout2
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
MIN.
24
6.5
7
+7.5
TYP.
29
8.5
9.5
+10.5
MAX.
35
10.5
12
Unit
mA
dB
dB
dBm
+6.5 +9.5
dBm
10 19
dB
7 15.5 dB
10 24
dB
10 18
dB
STANDARD CHARACTERISTICS FOR REFERENCE 1 (HIGH-GAIN MODE)
(TA = +25°C, VCC = 3.3 V, Gselect = GND, ZS = ZL = 50 Ω, unless otherwise specified)
Parameter
Power Gain 3
Power Gain 4
Power Gain 5
Gain Flatness
Isolation 1
Isolation 2
Noise Figure 1
Noise Figure 2
Output 3rd Order
Intercept Point 1
Output 3rd Order
Intercept Point 2
2nd Order Intermodulation
Distortion
2nd Harmonic
Symbol
GP3
GP4
GP5
ΔGP
ISL1
ISL2
NF1
NF2
OIP3 1
OIP3 2
IM2
2f0
Test Conditions
f = 0.25 GHz, Pin = 30 dBm
f = 2.6 GHz, Pin = 30 dBm
f = 3.0 GHz, Pin = 30 dBm
f = 1.0 GHz to 2.2 GHz,
Pin = 30 dBm
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
f = 1.0 GHz
f = 2.2 GHz
f1 = 1 000 MHz,
f2 = 1 001 MHz
f1 = 2 200 MHz,
f2 = 2 201 MHz
f1 = 1 000 MHz, f2 = 1 001 MHz,
Pout = 5 dBm/tone
f0 = 1.0 GHz, Pout = 15 dBm
Reference Value
18
20.5
18
1.5
31
30
4.0
4.0
+22
+20
42
53
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBc
dBc
R09DS0027EJ0100 Rev.1.00
Sep 26, 2011
Page 3 of 22
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μPC3245TB
STANDARD CHARACTERISTICS FOR REFERENCE 2 (MIDDLE-GAIN MODE)
(TA = +25°C, VCC = 3.3 V, Gselect = Open, ZS = ZL = 50 Ω, unless otherwise specified)
Parameter
Power Gain 3
Power Gain 4
Power Gain 5
Gain Flatness
Isolation 1
Isolation 2
Noise Figure 1
Noise Figure 2
Output 3rd Order
Intercept Point 1
Output 3rd Order
Intercept Point 2
2nd Order Intermodulation
Distortion
2nd Harmonic
Symbol
GP3
GP4
GP5
ΔGP
ISL1
ISL2
NF1
NF2
OIP3 1
OIP3 2
IM2
2f0
Test Conditions
f = 0.25 GHz, Pin = 30 dBm
f = 2.6 GHz, Pin = 30 dBm
f = 3.0 GHz, Pin = 30 dBm
f = 1.0 GHz to 2.2 GHz,
Pin = 30 dBm
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
f = 1.0 GHz
f = 2.2 GHz
f1 = 1 000 MHz,
f2 = 1 001 MHz
f1 = 2 200 MHz,
f2 = 2 201 MHz
f1 = 1 000 MHz, f2 = 1 001 MHz,
Pout = 5 dBm/tone
f0 = 1.0 GHz, Pout = 15 dBm
Reference Value
14.5
15.5
14.5
1.0
24.5
24.5
6.0
6.5
+24
+21
49
62
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBc
dBc
STANDARD CHARACTERISTICS FOR REFERENCE 3 (LOW-GAIN MODE)
(TA = +25°C, VCC = 3.3 V, Gselect = VCC, ZS = ZL = 50 Ω, unless otherwise specified)
Parameter
Power Gain 3
Power Gain 4
Power Gain 5
Gain Flatness
Isolation 1
Isolation 2
Noise Figure 1
Noise Figure 2
Output 3rd Order
Intercept Point 1
Output 3rd Order
Intercept Point 2
2nd Order Intermodulation
Distortion
2nd Harmonic
Symbol
GP3
GP4
GP5
ΔGP
ISL1
ISL2
NF1
NF2
OIP3 1
OIP3 2
IM2
2f0
Test Conditions
f = 0.25 GHz, Pin = 30 dBm
f = 2.6 GHz, Pin = 30 dBm
f = 3.0 GHz, Pin = 30 dBm
f = 1.0 GHz to 2.2 GHz,
Pin = 30 dBm
f = 1.0 GHz, Pin = 30 dBm
f = 2.2 GHz, Pin = 30 dBm
f = 1.0 GHz
f = 2.2 GHz
f1 = 1 000 MHz,
f2 = 1 001 MHz
f1 = 2 200 MHz,
f2 = 2 201 MHz
f1 = 1 000 MHz, f2 = 1 001 MHz,
Pout = 5 dBm/tone
f0 = 1.0 GHz, Pout = 15 dBm
Reference Value
8
10
10
1.0
21
24
9.0
9.0
+23
+21
50
64
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBc
dBc
R09DS0027EJ0100 Rev.1.00
Sep 26, 2011
Page 4 of 22
Free Datasheet http://www.datasheet4u.com/



UPC3245TB datasheet pdf
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UPC3245TB SiGe BiCMOS Integrated Circuit UPC3245TB
Renesas
UPC3245TB pdf

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