UF830Z Datasheet PDF - UTC

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UF830Z
UTC

Part Number UF830Z
Description N-CHANNEL POWER MOSFET
Page 8 Pages


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UNISONIC TECHNOLOGIES CO., LTD
UF830Z
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET
Power MOSFET
„ DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is
designed for high voltage, high speed power switching applications, such as
switching regulators, switching converters, solenoid, motor drivers and
related drivers.
„ FEATURES
* VDS = 500V
* ID = 4.5A
* RDS(ON)=1.5
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* ESD Protected
„ SYMBOL
2.Drain
http://www.DataSheet4U.net/
1
TO-220F
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF830ZL-TF3-T
UF830ZG-TF3-T
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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UF830Z
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ=25°C ~125°C)
VDS
500 V
Drain to Gate Voltage (RGS=20k, TJ=25°C ~125°C)
Gate to Source Voltage
VDGR
VGS
500 V
±30 V
Drain Current
Continuous
Pulsed
ID
IDM
4.5 A
18 A
Power Dissipation (TC = 25°C)
Single Pulse Avalanche Energy Rating (Note 2)
PD
EAS
38 W
300 mJ
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, starting TJ =25°C, L=25mH, RG=25, peak IAS=4.5A
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJc
RATINGS
62.5
3.31
UNIT
°C/W
°C/W
„ ELECTRICAL SPECIFICATIONS (Ta =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain-Source Breakdown Voltage
BVDSS
ID=250μA, VGS=0V
500
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250μA
2.0
On-State Drain Current (Note 1)
ID(ON)
VDS>ID(ON)×RDS(ON)MAX, VGS=10V 4.5
Drain-Source Leakage Current
IDSS
VDS= Rated BVDSS, VGS=0V
VDS=0.8×Rated BVDSShttp://www.DataSheet4U.net/
VGS=0V, TJ= 125°C
Gate-Source Leakage Current
IGSS VGS=±30V
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
ID=2.5A, VGS=10V
Forward Transconductance (Note 1)
gFS VDS10V, ID=2.7A
2.5
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=250V, ID4.5A
RGS=12, RL =54(Note 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VGS=10V, ID=4.5A
VDS=0.8×Rated BVDSS
IG(REF)=1.5mA (Note 3)
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
Note: 1. Pulse Test: Pulse width300μs, Duty Cycle2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP MAX UNIT
V
4.0 V
A
25 μA
250 μA
±800 nA
1.3 1.5
4.2 S
10 17 ns
15 23 ns
33 53 ns
16 23 ns
22 32 nC
3.5 nC
11 nC
600 pF
100 pF
20 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF830Z
Power MOSFET
„ INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL MIN TYP MAX UNIT
Internal Drain Inductance
Measured from the contact screw on tab to center of die
Measured from the drain lead(6mm from package) to center of die
LD
3.5 nH
4.5 nH
Internal Source Inductance
Measured from the source lead(6mm from header) to source bond pad
LS
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
7.5
nH
„ SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
(Note 1)
VSD TJ=25°C, ISD=4.5A, VGS=0V
Continuous Source to Drain Current
Pulse Source to Drain Current
ISD
ISDM
Note 2
Reverse Recovery Time
tRR TJ=25°C, ISD=4.5A, dI/dt=100A/μs 180
Reverse Recovery Charge
QRR
TJ=25°C, ISD=4.5A, dI/dt=100A/μs
http://www.DataSheet4U.net/
NOTE : 1. Pulse Test: Pulse width300μs, Duty Cycle2%.
0.96
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP
350
2.2
MAX UNIT
1.6 V
5.5 A
18 A
760 ns
4.3 μC
D
G
S
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF830Z
„ TEST CIRCUITS AND WAVEFORMS
VARY tp TO OBTAIN
REQUIRED PEAK IAS
VGS
0V tp
RG
Power MOSFET
VDS
L
DUT
+
VDD
-
IAS
0.01
FIG 1. Unclamped Energy Test Circuit
http://www.DataSheet4U.net/
FIG 2. Unclamped Energy Waveforms
RL
RG
DUT
+
VDD
-
VGS
FIG 3. Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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