UF601 Datasheet PDF - Unisonic Technologies

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UF601
Unisonic Technologies

Part Number UF601
Description 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
Page 3 Pages


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UNISONIC TECHNOLOGIES CO., LTD
UF601
0.185A, 600V N-CHANNEL
DEPLETION-MODE POWER
MOSFET
DESCRIPTION
The UTC UF601 is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed.
FEATURES
* RDS(ON) < 120@ VGS=0V, ID=3mA
* High Switching Speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
UF601G-AA3-R
UF601G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-223
SOT-23
Pin Assignment
123
SGD
SGD
Packing
Tape Reel
Tape Reel
MARKING
SOT-223
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
SOT-23
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UF601
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 2)
VDSS
600
V
Drain-Gate Voltage (Note 2)
VDGX 600 V
Gate-Source Voltage
Drain Current
Power Dissipation
Continuous
Pulsed
SOT-223
SOT-23
VGSS
ID
IDM
PD
±20
0.185
0.740
0.8
0.5
V
A
A
W
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ=+25°C~+150°C
THERMAL DATA
PARAMETER
Junction to Ambient
SOT-223
SOT-23
SYMBOL
θJA
RATINGS
150
250
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
ID(OFF)
IGSS
ID=250µA, VGS=-5V
VDS=600V, VGS=-5V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate to Source Cut Off Voltage
Drain-Source Leakage Current
Static Drain-Source On-State Resistance
VGS(OFF)
IDSS
RDS(ON)
VDS=3V, ID=8µA
VDS=25V, VGS=0V
VGS=0V, ID=3mA
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V,
f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=-5~5V, VDS=30V,
ID=5mA
VGS=-5~5V, VDD=30V,
ID=5mA, RG=20
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD ISD=3.0mA, VGS=-10V
Note: 1. Repetitive rating, pulse width limited by maximum junction temperature
2. Pulse width380μs; duty cycle2%
MIN TYP MAX UNIT
600 V
0.1 μA
+100 nA
-100 nA
-2.7 -1.5 V
7.0 mA
60 120
53
3000
2.6
pF
pF
pF
7.6 nC
4 nC
0.4 nC
42 ns
20 ns
80 ns
300 ns
1.4 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF601
TYPICAL CHARACTERISTICS
TR
VDD=30V ,ID=5mA, RG=20
10V
/5V
0
-10V
/-5V
0
200
Time (40ns/div)
400
Power MOSFET
TF
VDD=30V ,ID=5mA, RG=20
10V
/5V
0
-10V
/-5V
0
1000
Time (200ns/div)
2000
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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