UF520 Datasheet PDF - Unisonic Technologies

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UF520
Unisonic Technologies

Part Number UF520
Description 100V N-CHANNEL POWER MOSFET
Page 6 Pages


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UNISONIC TECHNOLOGIES CO., LTD
UF520
Preliminary
9.2A, 100V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC UF520 is an N-channel enhancement power MOSFET
using UTC’s advanced technology to provide the customers with
high Input Impedance and high switching speed.
This UTC UF520 is suitable for motor drivers, switching
convertors, switching regulators, relay drivers and drivers for high
power bipolar switching transistors.
„ FEATURES
* RDS(ON)=0.25@ VGS=10V,ID=5.6A
* High Input Impedance
* High Switching Speed
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF520L-TA3-T
UF520G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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UF520
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
100 V
±20 V
Drain Current
Continuous
TC=25°C
TC=100°C
Pulsed (Note 2)
ID
IDM
9.2 A
6.5 A
37 A
Single Pulsed Avalanche Energy (Note 3)
EAS
36 mJ
Power Dissipation
Junction Temperature
PD 50 W
TJ
+150
°C
Storage Temperature
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve
3. VDD=25V, starting TJ=25°C, L=640mH, RG=25, peak IAS=9.2A
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
80
2.5
UNIT
°C/W
°C/W
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UF520
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=95V, VGS=0V
VGS=±20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
On State Drain Current (Note 1)
VGS(TH)
RDS(ON)
ID(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=5.6A (Note 1)
VGS=10V, VDS>ID(ON)×RDS(ON)MAX
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=10V, ID=9.2A, VDS=0.8*Rated
BVDSS, IG(REF)=1.5mA (Note 2)
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=50V, ID9.2A, RG=18,
RL=5.5 (Note 3)
Fall-Time
tF
Notes: 1. Pulse test: pulse width300µs, duty cycle2%
2. Gate Charge is Essentially Independent of Operating Temperature
3. MOSFET Switching Times are Essentially Independent of Operating Temperature
MIN TYP MAX UNIT
100 V
250 µA
±100 nA
2.0 4.0
0.25 0.27
9.2
V
A
350 pF
130 pF
25 pF
10 30 nC
2.5 nC
2.5 nC
9 13 ns
30 63 ns
18 70 ns
20 59 ns
„ SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source to Drain Diode Voltage
VSD TJ=25°C,ISD=9.2A,VGS=0V (Note 1)
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 2)
ISD
ISDM
Note 3
Note : 1. Pulse Test: Pulse width300μs, Duty Cycle2%.
2.5 V
9.2 A
37 A
2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance
curve
3. Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF520
Preliminary
„ TEST CIRCUITS AND WAVEFORMS
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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