TT2190 Datasheet PDF - BLUE ROCKET ELECTRONICS


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TT2190
BLUE ROCKET ELECTRONICS

Part Number TT2190
Description Silicon NPN transistor
Page 6 Pages

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TT2190
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package.

特征 / Features
开关速度快、高击穿电压(VCBO=1500V)、可靠性高、采用 MBIT 技术、内置阻尼二极管。
High Speed, high breakdown voltage(VCBO=1500V),high reliability(Adoption of HVP process.),
Adoption of MBIT process. On-chip damper diode.
用途 / Applications
彩色电视机行输出放大。
Color TV Horizontal Deflection Output Applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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TT2190
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current – Continuous(Pulse)
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO(sus)
VCEO
VEBO
IC
ICP
PC
PC (Tc=25)
Tj
Tstg
DATA SHEET
数值
Rating
1500
800
6.0
8.0
20
2.0
35
150
-55150
单位
Unit
V
V
V
A
A
W
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector Sustain Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Diode Forward Voltage
Fall Time
符号
Symbol
VCEO(sus)
Ices
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VF
tf
测试条件
Test Conditions
IC=100mA IB=0
VCB=1500V RBE=0
VCB=800V IE=0
VEB=4.0V IC=0
VCE=5.0V IC=5.0A
VCE=5.0V IC=1.0A
IC=4.5A
IB=0.9A
IC=4.5A
IEC =7.0A
IC=3.0A
IB2=1.2A
IB=0.9A
IB1=0.6A
最小值 典型值 最大值 单位
Min Typ Max Unit
800 V
1.0 mA
10 μA
40 130 mA
58
10
3.0 V
1.5 V
2.0 V
0.3 μS
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TT2190
Rev.F Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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TT2190
Rev.F Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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