TSI4N60M Datasheet PDF - Truesemi


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TSI4N60M
Truesemi

Part Number TSI4N60M
Description N-Channel MOSFET
Page 7 Pages

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TSB4N60M / TSI4N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 4.0A, 600V, RDS(on) = 2.6@VGS = 10 V
• Low gate charge ( typical 16nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D
D2-PAK
GS
GDS
I2-PAK
G
S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
TSB4N60M
TSI4N60M
600
4.0 4.0*
2.4 2.4 *
16 16 *
30
160
10
4.5
100 33
0.8 0.26
-55 to +150
300
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TSB4N60M
1.25
0.5
62.5
TSI4N60M
3.79
--
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W



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TSB4N60M / TSI4N60M
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 A
ID = 250 A, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.6
--
--
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
YFS Forward Transconductance
VDS = VGS, ID = 250 A
VGS = 10 V, ID = 2.0 A
VDS = 20V, ID = 2.0 A
2.0 --
-- 2.0
- 4.5
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 560
-- 55
-- 7
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 4.0 A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 4.0 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
10
40
40
50
16
2.5
6.5
Max Units
--
--
1
10
100
-100
V
V/°C
A
A
nA
nA
4.5 V
2.6
-S
-- pF
-- pF
-- pF
-- ns
-- ns
-- ns
-- ns
- nC
-- nC
-- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 4.0
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 16
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.0 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 4.0 A,
dIF / dt = 100 A/s
(Note 4)
--
--
280
1.8
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 20mH, IAS = 4.0 A, VDD = 50V, RG = 25 Starting TJ = 25°C
3. ISD 4.0 A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
C



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Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics



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Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-1. Maximum Safe Operating Area
for TSB4N60M
5
4
3
2
1
025 50 75 100 125 150
T , Case Temperature [? ]
C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9-2. Maximum Safe Operating Area
for TSI4N60M




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