TSHA6501 Datasheet PDF - Vishay

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TSHA6501
Vishay

Part Number TSHA6501
Description Infrared Emitting Diode
Page 6 Pages

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TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
94 8389
DESCRIPTION
The TSHA650. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
TSHA6500
Ie (mW/sr)
20
TSHA6501
25
TSHA6502
30
TSHA6503
35
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 24
± 24
± 24
± 24
λP (nm)
875
875
875
875
ORDERING INFORMATION
ORDERING CODE
TSHA6500
TSHA6501
TSHA6502
TSHA6503
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
TEST CONDITION
tp/T = 0.5, tp = 100 µs
tp = 100 µs
SYMBOL
VR
IF
IFM
IFSM
PV
tr (ns)
600
600
600
600
PACKAGE FORM
T-1¾
T-1¾
T-1¾
T-1¾
VALUE
5
100
200
2.5
180
UNIT
V
mA
mA
A
mW
www.vishay.com
166
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81022
Rev. 1.7, 05-Sep-08

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TSHA6502 Infrared Emitting Diode TSHA6502
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TSHA6503 Infrared Emitting Diode TSHA6503
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