TSHA6500 Datasheet PDF - Vishay

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TSHA6500
Vishay

Part Number TSHA6500
Description Infrared Emitting Diode
Page 5 Pages


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TSHA6500
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
94 8389
DESCRIPTION
The TSHA6500 is an infrared, 875 nm emitting diode in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 200/95/EC and
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
in
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
TSHA6500
Ie (mW/sr)
30
Note
• Test conditions see table “Basic Characteristics”
(deg)
± 24
P (nm)
875
tr (ns)
600
ORDERING INFORMATION
ORDERING CODE
TSHA6500
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
VR
Forward current
IF
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
Surge forward current
tp = 100 μs
IFSM
Power dissipation
PV
Junction temperature
Tj
Operating temperature range
Tamb
Storage temperature range
Soldering temperature
t 5 s, 2 mm from case
Tstg
Tsd
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
RthJA
VALUE
5
100
200
2.5
180
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 2.1, 24-Aug-11
1 Document Number: 81022
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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TSHA6500
Vishay Semiconductors
200
180
160
140
120 RthJA = 230 K/W
100
80
60
40
20
0
0
21142
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
RthJA = 230 K/W
60
40
20
0
0
21143
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
Temperature coefficient of VF
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA
VF
VF
TKVF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of e
Angle of half intensity
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
IF = 20 mA
IR
Cj
Ie
Ie
e
TKe
16
128
Peak wavelength
Spectral bandwidth
Temperature coefficient of p
Rise time
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1 A
p

TKp
tr
tr
Fall time
Virtual source diameter
IF = 100 mA
IF = 1 A
tf
tf
d
TYP.
1.5
2.8
- 1.6
20
30
240
24
- 0.7
± 24
875
80
0.2
600
300
600
300
2.2
MAX.
1.8
3.5
100
48
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Rev. 2.1, 24-Aug-11
2 Document Number: 81022
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TSHA6500
Vishay Semiconductors
101
IFSM = 2.5 A (single pause)
t p/T= 0.01
100 0.05
0.1
0.2
0.5
10-1
10-2
94 8003
10-1
100 101
t p - Pulse Duration (ms)
102
Fig. 2 - Pulse Forward Current vs. Pulse Duration
104
tp = 100 µs
103 tp/T= 0.001
102
101
01 2 3 4
94 8005
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
0.9
0.8
0.7
0
94 7990
20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
1000
100
10
TSHA 6500
1
100
948746-1
101 102 103
IF - Forward Current (mA)
104
Fig. 5 - Radiant Intensity vs. Forward Current
1000
100
10
1
0.1
100
94 8015 e
101 102 103
IF - Forward Current (mA)
104
Fig. 6 - Radiant Power vs. Forward Current
1.6
1.2
IF = 20 mA
0.8
0.4
0
- 10 0 10
50
100
94 8020
Tamb - Ambient Temperature (°C)
140
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Rev. 2.1, 24-Aug-11
3 Document Number: 81022
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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1.25
1.0
0.75
0.5
0.25
0
780
94 8000
IF = 100 mA
Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p )
880
λ - Wavelenght (nm)
980
Fig. 8 - Relative Radiant Power vs. Wavelength
PACKAGE DIMENSIONS in millimeters
AC
TSHA6500
Vishay Semiconductors
0° 10° 20°
30°
40°
1.0
0.9 50°
0.8 60°
0.7 70°
80°
0.6 0.4 0.2 0 0.2 0.4 0.6
94 8016 e
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
R2.49 (sphere)
0.6
+ 0.2
- 0.1
0.5
+ 0.15
- 0.05
6.544-5259.08-4
Issue: 3; 19.05.09
14436
2.54 nom.
Area not plane
Ø 5 ± 0.15
0.5
+ 0.15
- 0.05
technical drawings
according to DIN
specifications
Rev. 2.1, 24-Aug-11
4 Document Number: 81022
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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