TPC8132 Datasheet PDF - Toshiba Semiconductor


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TPC8132
Toshiba Semiconductor

Part Number TPC8132
Description MOSFETs
Page 9 Pages

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MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8132
1. Applications
• Lithium-Ion Secondary Batteries
• Power Management Switches
2. Features
(1) Small footprint due to small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 20 m(typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA)
3. Packaging and Internal Circuit
TPC8132
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP-8
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -40 V
Gate-source voltage
VGSS
-25/+20
Drain current (DC)
(Note 1)
ID
-7 A
Drain current (pulsed)
(Note 1)
IDP
-28
Power dissipation
(t = 10 s)
(Note 2)
PD
1.9 W
Power dissipation
(t = 10 s)
(Note 3)
PD
1.0 W
Single-pulse avalanche energy
(Note 4)
EAS
22 mJ
Avalanche current
IAR -7 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-12-04
Rev.1.0



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5. Thermal Characteristics
Characteristics
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
(t = 10 s)
(t = 10 s)
(Note 2)
(Note 3)
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: VDD = -24 V, Tch = 25(initial), L = 0.5 mH, RG = 25 , IAR = -7 A
TPC8132
Symbol
Rth(ch-a)
Rth(ch-a)
Max Unit
65.7 /W
125 /W
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2010-12-04
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TPC8132
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Drain cut-off current
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
VDS = -40 V, VGS = 0 V
  ±0.1 µA
  -10
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
(Note 5)
V(BR)DSS
V(BR)DSX
Vth
RDS(ON)
ID = -10 mA, VGS = 0 V
ID = -10 mA, VGS = 10 V
VDS = -10 V, ID = -0.2 mA
VGS = -4.5 V, ID = -3.5 A
-40   V
-30
-0.8 -2.0
25 33 m
VGS = -10 V, ID = -3.5 A
20 25
Note 5: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
tr
ton
tf
toff
Test Condition
VDS = -10 V, VGS = 0 V, f = 1 MHz
See Figure 6.2.1.
Min Typ. Max Unit
1580
190
230
8
16
46
180
pF
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Test Condition
VDD -32 V, VGS = -10 V, ID = -7 A
Qgs1
Qgd
Min Typ. Max Unit
34 nC
3.2
8.8
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed)
(Note 6)
IDRP
Diode forward voltage
VDSF IDR = -7 A, VGS = 0 V
Note 6: Ensure that the channel temperature does not exceed 150.
Min Typ. Max Unit
  -28 A
  1.2 V
3 2010-12-04
Rev.1.0



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7. Marking (Note)
TPC8132
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
4 2010-12-04
Rev.1.0




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