TPC8051-H Datasheet PDF - Toshiba Semiconductor


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TPC8051-H
Toshiba Semiconductor

Part Number TPC8051-H
Description MOSFETs
Page 7 Pages

TPC8051-H datasheet pdf
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TPC8051-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)
TPC8051-H
Switching Regulator Applications
Motor Drive Applications
DC-DC Converter Applications
Unit: mm
Small footprint due to a small and thin package
High-speed switching
Small gate charge: QSW = 16 nC (typ.)
Low drain-source ON-resistance:
RDS (ON) = 6.3 mΩ (typ.)
High forward transfer admittance: |Yfs| = 45 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 80 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
80
80
±20
13
52
1.9
1.0
110
13
0.06
150
55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-6J1B
Weight: 0.085g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
1234
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-06-19



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Thermal Characteristics
Characteristic
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
Rth (ch-a)
Rth (ch-a)
Max
65.8
125
Unit
°C/W
°C/W
TPC8051-H
Marking (Note 5)
TPC8051
H
Part No.
(or abbreviation code)
Lot No.
Note
Note : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a) (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1 mH, RG = 25 Ω, IAR = 13 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: * Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
2 2009-06-19



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Electrical Characteristics (Ta = 25°C)
TPC8051-H
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
rg
VGS = ±20 V, VDS = 0 V
VDS = 80 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = −20 V
VDS = 10 V, ID = 1.0 mA
VGS = 4.5 V, ID = 6.5 A
VGS = 10 V, ID = 6.5 A
VDS = 10 V, ID = 6.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
VGS 10 V
ton 0 V
ID = 6.5 A
VOUT
tf
toff
Qg
Qgs1
Qgd
QSW
VDD 40 V
Duty 1%, tw = 10 μs
VDD 64 V, VGS = 10 V, ID = 13 A
VDD 64 V, VGS = 5 V, ID = 13 A
VDD 64 V, VGS = 10 V, ID = 13 A
Min
80
60
1.3
22.5
Typ. Max
6.7
6.3
45
5800
150
520
1.0
±100
10
2.3
10.1
9.7
7540
210
1.5
3.4
14
6.7
67
85
43
14
10
16
Unit
nA
μA
V
V
mΩ
S
pF
Ω
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Peak forward current Pulse (Note 1)
Forward voltage (diode)
Symbol
IFP
VDSF
Test Condition
IDR = 13 A, VGS = 0 V
Min Typ. Max Unit
⎯ ⎯ 52 A
⎯ ⎯ −1.2 V
3 2009-06-19



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4.5 3.2 3
ID – VDS
20
10 2.8 2.7
16 2.9
12
Common source
Ta = 25°C
Pulse test
2.6
8
2.5
4
VGS = 2.4 V
0
0 0.2 0.4 0.6 0.8
Drain-source voltage VDS (V)
1
TPC8051-H
4.5 3.4 3.1
40
10
2.9
ID – VDS
3
30
20
2.8
Common source
Ta = 25°C
Pulse test
2.7
2.6
10
VGS = 2.5 V
0
0
0.4 0.8 1.2 1.6
2
Drain-source voltage VDS (V)
30
Common source
VDS = 10 V
25 Pulse test
ID – VGS
20
15
Ta = −55°C
10 100
25
5
0
0 1234
Gate-source voltage VGS (V)
5
VDS – VGS
0.2
Common source
Ta = 25
0.16
Pulse test
0.12
0.08
0.04
0
0
ID = 13 A
6.5
3.3
246 8
Gate-source voltage VGS (V)
10
1000
Common source
VDS = 10 V
Pulse test
100
Ta = −55°C
10 100
25
1
0.1
0.1 1 10
Drain current ID (A)
100
RDS (ON) – ID
100
Common source
Ta = 25
Pulse test
10
4.5
VGS = 10 V
1
0.1 1
10 100
Drain current ID (A)
4 2009-06-19




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