TPC8028 Datasheet PDF - Toshiba Semiconductor

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TPC8028
Toshiba Semiconductor

Part Number TPC8028
Description Field Effect Transistor
Page 7 Pages


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TPC8028
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8028
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
Small footprint due to small and thin package
Low drain-source ON resistance: RDS (ON) = 3.5 m(typ.)
High forward transfer admittance: |Yfs| = 40 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
18
72
1.9
1.0
84
18
0.066
150
55 to 150
Note 1, Note 2, Note 3 and Note 4: See the next page.
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-6J1B
Weight: 0.08 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2007-04-23



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Thermal Characteristics
Characteristics
Symbol
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
Max
65.8
125
Unit
°C/W
°C/W
Marking (Note 5)
TPC8028
TPC8028
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a) (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.2 mH, IAR = 18 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: on lower left of the marking indicates Pin 1.
Weekly code: (Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
2 2007-04-23



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Electrical Characteristics (Ta = 25°C)
TPC8028
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±20 V, VDS = 0 V
VDS = 30 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = −20 V
VDS = 10 V, ID = 1 mA
VGS = 4.5 V, ID = 9 A
VGS = 10 V, ID = 9 A
VDS = 10 V, ID = 9 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±100 nA
⎯ ⎯ 10 μA
30 ⎯ ⎯
V
10 ⎯ ⎯
1.3 2.5 V
5.6 8.0
mΩ
3.5 4.3
20 40 S
1800
370 pF
570
tr
ton
VGS
10 V
0V
tf
14
ID = 9 A
VOUT
26
ns
19
VDD ∼− 15 V
toff Duty <= 1%, tw = 10 μs
54
Qg 45
Qgs1
VDD ∼− 24 V, VGS = 10 V, ID = 18 A
8
nC
Qgd 15
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
IDRP
VDSF
Test Condition
IDR = 18 A, VGS = 0 V
Min Typ. Max Unit
⎯ ⎯ 72 A
⎯ ⎯ −1.2 V
3 2007-04-23



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8,10
20
16
12
3.6
3.8
4
4.5
6
ID – VDS
3.4
Common source
Ta = 25°C
Pulse test
3.3
8 3.2
3.1
4
VGS = 3 V
0
0 0.4 0.8 1.2 1.6 2
Drainsource voltage VDS (V)
TPC8028
50 10 6
4
4.5
40 8
ID – VDS
30
3.8
Common source
Ta = 25°C
Pulse test
3.6
20 3.4
3.3
10 3.2
3.1
0 VGS = 3 V
0 0.4 0.8 1.2 1.6 2
Drain-source voltage VDS (V)
50
Common source
VDS = 10 V
Pulse test
40
ID – VGS
30
20
100 Ta = −55°C
10
25
0
0 1234 56
Gatesource voltage VGS (V)
VDS – VGS
0.20
Common source
Ta = 25°C
0.16
Pulse test
0.12
0.08
0.04
0
0
ID = 18 A
9
4.5
2468
Gatesource voltage VGS (V)
10
1000
100
10
1
0.1
0.1
|Yfs| – ID
Ta = −55°C
100
25
Common source
VDS = 10 V
Pulse test
1 10
Drain current ID (A)
100
100 Common source
Ta = 25°C
Pulse test
RDS (ON) – ID
10
4.5
VGS = 10 V
1
0.1 1 10 100
Drain current ID (A)
4 2007-04-23



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