TN1625 Datasheet PDF - STMicroelectronics


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TN1625
STMicroelectronics

Part Number TN1625
Description 16A standard SCRs
Page 9 Pages

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Features
IT(RMS) =16 A
VDRM/VRRM = 600 to 1000 V
IGT = 25 mA
Description
The standard TN16 / TYNx16 16 A SCRs series
is suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current
capabilities.
TN1625
TYN616, TYN816
16 A standard SCRs
A
G
K
A
A
KA
G
D2PAK
(TN1625-x00G)
K
A
G
TO-220AB
(TYNx16RG)
Table 1. Device summary
Parameter
TN1625-600G
TYN616RG
VDRM/VRRM
Sensitivity
600
25
TYN816RG
800
25
TN1625-1000G
1000
25
Unit
V
mA
November 2007
Rev 6
1/9
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Characteristics
1 Characteristics
TN1625, TYN616, TYN816
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
RMS on-state current (180 °Conduction angle)
Average on-state current (180 °Conduction angle)
Non repetitive surge peak on-state current
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Tc = 110 °C
Tc = 110 °C
Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Value
16
10
200
190
180
50
4
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A
A2S
A/µs
A
W
°C
V
Table 3.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test Conditions
Value
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
IT = 500 mA Gate open
IG = 1.2 x IGT
VD = 67 % VDRM Gate open
ITM = 32 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
2
25
1.3
0.2
40
60
500
1.6
0.77
23
5
2
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Table 4. Thermal resistance
Symbol
Rth(j-c) Junction to case (DC)
Rth(j-a) Junction to ambient (DC)
Parameter
S = 01 cm2
D2PAK
TO-220AB
Value
1.1
45
60
Unit
°C/W
°C/W
S = copper surface under tab
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TN1625, TYN616, TYN816
Characteristics
Figure 1.
Maximum average power
Figure 2.
dissipation versus average on-state
current
Average and D.C. on-state current
versus case temperature
P(W)
16
α = 180°
14
12
10
8
6
4
2
0
02
IT(AV)(A)
46
8
360°
α
10
IT(AV)(A)
18
16
14
12
10
8
6
4
2
0
12 0
25
D.C.
α = 180°
Tcase(°C)
50 75 100 125
Figure 3.
Average and D.C. on-state current Figure 4.
versus ambient temperature
(copper surface under tab: S=1cm2)
(D2PAK)
Relative variation of thermal
impedance versus pulse duration
IT(AV)(A)
4.0
3.5
3.0
2.5
D.C.
K=[Zth/Rth]
1.00
Zth(j-c)
2.0 α = 180°
1.5
0.10
Zth(j-a)
1.0
0.5
Tamb(°C)
0.0
tp(s)
0.01
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Figure 5.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature
Figure 6. Surge peak on-state current versus
number of cycles
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2.0
1.5
IGT
1.0 IH & IL
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60
ITSM(A)
200
180
160
140
120
100
80
60
Repetitive
TC=110°C
Non repetitive
Tj initial=25°C
40
80 100 120 140
20
0
1
Number of cycles
10 100
tp=10ms
One cycle
1000
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Characteristics
TN1625, TYN616, TYN816
Figure 7.
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and
corresponding values of I2t
Figure 8.
On-state characteristics (maximum
values)
ITSM(A), I2t (A2s)
2000
1000
Tj initial = 25°C
ITSM
ITM(A)
200
100
Tj max.:
Vt0=0.77V
Rd=23mΩ
100
dI/dt limitation
I2t Tj=max
10 Tj=25°C
10
0.01
tp(ms)
0.10
1.00
10.00
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Figure 9.
Thermal resistance junction to
ambient versus copper surface
under tab
(epoxy printed circuit board FR4,
copper thickness: 35 µm) (D2PAK)
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
S(cm²)
0
0 4 8 12 16 20 24 28 32 36 40
4/9




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