TK9J90E Datasheet PDF - Toshiba


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TK9J90E
Toshiba

Part Number TK9J90E
Description MOSFETs Silicon N-Channel MOS
Page 9 Pages

TK9J90E datasheet pdf
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MOSFETs Silicon N-Channel MOS (π-MOS)
TK9J90E
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 1.0 (typ.)
(2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V)
(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)
3. Packaging and Internal Circuit
TK9J90E
1: Gate
2: Drain (Heatsink)
3: Source
TO-3P(N)
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4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
TOR
900
±30
9
27
250
454
9
9
27
150
-55 to 150
0.8
V
A
W
mJ
A
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2013-06-21
Rev.2.0



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5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25(initial), L = 10.3 mH, RG = 25 , IAR = 9 A
TK9J90E
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
0.5 /W
50
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
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TK9J90E
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
VGS = ±30 V, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 0.9 mA
VGS = 10 V, ID = 4.5 A
Min Typ. Max Unit
  ±1 µA
  10
900   V
2.5 4.0
1.0 1.3
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
Ciss
Crss
Coss
rg
tr
ton
tf
toff
dv/dt
Test Condition
VDS = 25 V, VGS = 0 V, f = 1 MHz
VDS = OPEN, f = 1 MHz
See Fig. 6.2.1.
VDD = 0 to 400 V, ID = 9 A
Min Typ. Max Unit
2000
pF
15
150
3.5
40 ns
80
35
140
20   V/ns
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Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Test Condition
VDD 400 V, VGS = 10 V, ID = 9 A
Qgs1
Qgd
Min Typ.
46
13
18
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Max
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Symbol
VDSF
trr
Qrr
Irr
Test Condition
IDR = 9 A, VGS = 0 V
IDR = 9 A, VGS = 0 V
-dIDR/dt = 100 A/µs
Min Typ. Max
  -1.7
1200
12
24
Unit
nC
Unit
V
ns
µC
A
3 2013-06-21
Rev.2.0



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7. Marking (Note)
TK9J90E
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
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4 2013-06-21
Rev.2.0




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