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Part Number

TIM8596-2

Manufacturer Toshiba
Short Description MICROWAVE POWER GaAs FET
Long Description FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 33.5dBm at 8.5GHz to 9.6GHz ・HIGH GAIN G1dB= 7.5dB a

Datasheet : TIM8596-2



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