Part Number | TIM7785-4UL |
|
Manufacturer | Toshiba Semiconductor | |
Short Description | MICROWAVE POWER GaAs FET | |
Long Description | FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN G1dB= 8.5dB a |
Datasheet : TIM7785-4UL |
This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010 :: HOME :: Privacy Policy + Contact |