Part Number | TIM0910-4 |
|
Manufacturer | Toshiba | |
Short Description | MICROWAVE POWER GaAs FET | |
Long Description | FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 9.5GHz to 10.5GHz ・HIGH GAIN G1dB= 7.5dB |
Datasheet : TIM0910-4 |
This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010 :: HOME :: Privacy Policy + Contact |