www.Datasheet-PDF.com


Part Number

TIM0910-4

Manufacturer Toshiba
Short Description MICROWAVE POWER GaAs FET
Long Description FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 9.5GHz to 10.5GHz ・HIGH GAIN G1dB= 7.5dB

Datasheet : TIM0910-4



This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.

Since 2010   ::   HOME   ::   Privacy Policy + Contact