TH58NVG3S0HBAI6 Datasheet PDF - Toshiba

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TH58NVG3S0HBAI6
Toshiba

Part Number TH58NVG3S0HBAI6
Description 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM
Page 30 Pages


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TH58NVG3S0HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes 64 pages 4096blocks.
The device has two 4352-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block
unit (256 Kbytes 16 Kbytes: 4352 bytes 64 pages).
The TH58NVG3S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
Memory cell array
Register
Page size
Block size
x8
4352 128K 8 2
4352 8
4352 bytes
(256K 16K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Mode control
Serial input/output
Command control
Number of valid blocks
Min 4016 blocks
Max 4096 blocks
Power supply
VCC 2.7V to 3.6V
Access time
Cell array to register 25 s max
Serial Read Cycle
25 ns min (CL=50pF)
Program/Erase time
Auto Page Program
Auto Block Erase
300 s/page typ.
2.5 ms/block typ.
Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
100 A max
Package
P-VFBGA67-0608-0.80-001 (Weight: 0.101 g typ.)
8 bit ECC for each 512Byte is required.
1 2013-09-20C



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PIN ASSIGNMENT (TOP VIEW)
12345678
A NC NC
NC NC NC
B NC WP ALE VSS CE WE RY/BY NC
C NC NC RE CLE NC NC NC NC
D NC NC NC NC NC NC
E NC NC NC NC NC NC
F NC NC NC NC NC NC
G NC I/O1 NC NC NC VCC
H NC NC I/O2 NC VCC I/O6 I/O8 NC
J NC VSS I/O3 I/O4 I/O5 I/O7 VSS NC
K NC NC NC
NC NC NC
PIN NAMES
I/O1 to I/O8
CE
WE
RE
CLE
ALE
WP
RY/BY
VCC
VSS
NC
I/O port
Chip enable
Write enable
Read enable
Command latch enable
Address latch enable
Write protect
Ready/Busy
Power supply
Ground
No Connection
TH58NVG3S0HBAI6
2 2013-09-20C



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BLOCK DIAGRAM
I/O1
to
I/O8
CE
CLE
ALE
WE
RE
WP
RY / BY
I/O
Control circuit
Logic control
RY / BY
Status register
Address register
Command register
Control circuit
TH58NVG3S0HBAI6
VCC VSS
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC
VIN
VI/O
Power Supply Voltage
Input Voltage
Input /Output Voltage
PD
TSOLDER
TSTG
TOPR
Power Dissipation
Soldering Temperature (10 s)
Storage Temperature
Operating Temperature
VALUE
0.6 to 4.6
0.6 to 4.6
0.6 to VCC 0.3 (4.6 V)
0.3
260
55 to 125
-40 to 85
CAPACITANCE *(Ta 25°C, f 1 MHz)
SYMB0L
PARAMETER
CONDITION
CIN Input
VIN 0 V
COUT
Output
VOUT 0 V
* This parameter is periodically sampled and is not tested for every device.
MIN

MAX
20
20
UNIT
V
V
V
W
°C
°C
°C
UNIT
pF
pF
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TH58NVG3S0HBAI6
VALID BLOCKS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB Number of Valid Blocks
4016
4096
Blocks
NOTE:
The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
The first block (Block 0) is guaranteed to be a valid block at the time of shipment.
The specification for the minimum number of valid blocks is applicable over lifetime
The number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane
operations.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VCC
Power Supply Voltage
2.7 3.6 V
VIH High Level input Voltage
Vcc x 0.8
VCC 0.3
V
VIL Low Level Input Voltage
0.3*
Vcc x 0.2
* 2 V (pulse width lower than 20 ns)
DC CHARACTERISTICS (Ta -40 to 85, VCC 2.7 to 3.6V)
SYMBOL
PARAMETER
IIL
ILO
ICCO1
ICCO2
ICCO3
ICCS
Input Leakage Current
Output Leakage Current
Serial Read Current
Programming Current
Erasing Current
Standby Current
CONDITION
VIN 0 V to VCC
VOUT 0 V to VCC
CE VIL, IOUT 0 mA, tcycle 25 ns
CE VCC 0.2 V, WP 0 V/VCC
MIN

TYP.

MAX
20
20
30
30
30
100
V
UNIT
A
A
mA
mA
mA
A
VOH
High Level Output Voltage IOH  0.1 mA
Vcc – 0.2
V
VOL Low Level Output Voltage IOL 0.1 mA
IOL
( RY / BY )
Output current of RY / BY
pin
VOL 0.2 V
  0.2 V
4 mA
4 2013-09-20C



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