TC74HC11AF Datasheet PDF - Toshiba


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TC74HC11AF
Toshiba

Part Number TC74HC11AF
Description Triple 3-Input AND Gate
Page 8 Pages

TC74HC11AF datasheet pdf
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TC74HC11AP/AF/AFN
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC11AP,TC74HC11AF,TC74HC11AFN
Triple 3-Input AND Gate
The TC74HC11A is a high speed CMOS 3-INPUT AND GATE
fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 4 stages including a buffer
output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
High speed: tpd = 7 ns (typ.) at VCC = 5 V
Low power dissipation: ICC = 1 μA (max) at Ta = 25°C
High noise immunity: VNIH = VNIL = 28% VCC (min)
Output drive capability: 10 LSTTL loads
Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
Balanced propagation delays: tpLH ∼− tpHL
Wide operating voltage range: VCC (opr) = 2 to 6 V
Pin and function compatible with 74LS11
Pin Assignment
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74HC11AP
TC74HC11AF
TC74HC11AFN
IEC Logic Symbol
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
SOL14-P-150-1.27
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.12 g (typ.)
1 2007-10-01



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Truth Table
TC74HC11AP/AF/AFN
ABC
LXX
XLX
XXL
HHH
X: Don’t care
Y
L
L
L
H
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
0.5 to 7
0.5 to VCC + 0.5
0.5 to VCC + 0.5
±20
±20
±25
±50
500 (DIP) (Note 2)/180 (SOP)
65 to 150
V
V
V
mA
mA
mA
mA
mW
°C
Note 1:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of 10 mW/°C shall be
applied until 300 mW.
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
VCC
VIN
VOUT
Topr
tr, tf
2 to 6
0 to VCC
0 to VCC
40 to 85
0 to 1000 (VCC = 2.0 V)
0 to 500 (VCC = 4.5 V)
0 to 400 (VCC = 6.0 V)
V
V
V
°C
ns
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
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TC74HC11AP/AF/AFN
Electrical Characteristics
DC Characteristics
Characteristics
High-level input
voltage
Low-level input
voltage
High-level output
voltage
Low-level output
voltage
Input leakage
current
Quiescent supply
current
Symbol
VIH
VIL
VOH
VOL
IIN
Test Condition
Ta = 25°C
VIN
= VIH or VIL
IOH = −20 μA
IOH = −4 mA
IOH = −5.2 mA
VIN
= VIH or VIL
IOL = 20 μA
IOL = 4 mA
IOL = 5.2 mA
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.18
5.68
Typ.
2.0
4.5
6.0
4.31
5.80
0.0
0.0
0.0
0.17
0.18
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.26
0.26
VIN = VCC or GND
6.0 ⎯ ⎯ ±0.1
ICC VIN = VCC or GND
6.0 ⎯ ⎯ 1.0
Ta =
40 to 85°C
Min Max
1.50
3.15
4.20
0.50
1.35
1.80
1.9
4.4
5.9
4.13
5.63
0.1
0.1
0.1
0.33
0.33
⎯ ±1.0
10.0
Unit
V
V
V
V
μA
μA
AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Output transition time
Propagation delay time
tTLH
tTHL
tpLH
tpHL
4
8 ns
⎯ ⎯ 7 14 ns
3 2007-10-01



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TC74HC11AP/AF/AFN
AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Characteristics
Symbol
Output transition time
Propagation delay
time
Input capacitance
Power dissipation
capacitance
tTLH
tTHL
tpLH
tpHL
CIN
CPD
(Note)
Test Condition
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
Ta = 25°C
Min Typ. Max
25 75
7 15
6 13
30 85
10 17
9 14
5 10
⎯ ⎯ 32
Ta =
40 to 85°C
Min Max
95
19
16
105
21
18
10
⎯⎯
Unit
ns
ns
pF
pF
Note:
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPDVCCfIN + ICC/3 (per gate)
4 2007-10-01




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