TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1G BIT (128M 8 BIT) CMOS NAND E2PROM
The TC58NVG0S3HBAI6is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 1024blocks.
The device has a 2176-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block
unit (128 Kbytes 8 Kbytes: 2176 bytes 64 pages).
The TC58NVG0S3HBAI6is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
Memory cell array
2176 64K 8
(128K 8K) bytes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
Number of valid blocks
Min 1004 blocks
Max 1024 blocks
VCC 2.7V to 3.6V
Cell array to register 25 s max
Serial Read Cycle
25 ns min (CL=50pF)
Auto Page Program
Auto Block Erase
300 s/page typ.
2.5 ms/block typ.
Read (25 ns cycle)
30 mA max.
30 mA max
30 mA max
50 A max
P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
8 bit ECC for each 512Byte is required.