TC58NVG0S3HBAI6 Datasheet PDF - Toshiba

www.Datasheet-PDF.com

TC58NVG0S3HBAI6
Toshiba

Part Number TC58NVG0S3HBAI6
Description 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM
Page 30 Pages


TC58NVG0S3HBAI6 datasheet pdf
Download PDF
TC58NVG0S3HBAI6 pdf
View PDF for Mobile

No Preview Available !

TC58NVG0S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1G BIT (128M 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NVG0S3HBAI6is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 1024blocks.
The device has a 2176-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block
unit (128 Kbytes 8 Kbytes: 2176 bytes 64 pages).
The TC58NVG0S3HBAI6is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
Memory cell array
Register
Page size
Block size
x8
2176 64K 8
2176 8
2176 bytes
(128K 8K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
Mode control
Serial input/output
Command control
Number of valid blocks
Min 1004 blocks
Max 1024 blocks
Power supply
VCC 2.7V to 3.6V
Access time
Cell array to register 25 s max
Serial Read Cycle
25 ns min (CL=50pF)
Program/Erase time
Auto Page Program
Auto Block Erase
300 s/page typ.
2.5 ms/block typ.
Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
50 A max
Package
P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
8 bit ECC for each 512Byte is required.
1 2012-08-31C



No Preview Available !

PIN ASSIGNMENT (TOP VIEW)
12345678
A NC NC
NC NC NC
B NC WP ALE VSS CE WE RY/BY NC
C NC NC RE CLE NC NC NC NC
D NC NC NC NC NC NC
E NC NC NC NC NC NC
F NC NC NC NC NC NC
G NC I/O1 NC NC NC VCC
H NC NC I/O2 NC VCC I/O6 I/O8 NC
J NC VSS I/O3 I/O4 I/O5 I/O7 VSS NC
K NC NC NC
NC NC NC
PIN NAMES
I/O1 to I/O8
CE
WE
RE
CLE
ALE
WP
RY/BY
VCC
VSS
NC
I/O port
Chip enable
Write enable
Read enable
Command latch enable
Address latch enable
Write protect
Ready/Busy
Power supply
Ground
No Connection
TC58NVG0S3HBAI6
2 2012-08-31C



No Preview Available !

BLOCK DIAGRAM
I/O1
to
I/O8
CE
CLE
ALE
WE
RE
WP
RY /BY
I/O
Control circuit
Logic control
RY /BY
Status register
Address register
Command register
Control circuit
TC58NVG0S3HBAI6
VCC VSS
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC
VIN
VI/O
Power Supply Voltage
Input Voltage
Input /Output Voltage
PD
TSOLDER
TSTG
TOPR
Power Dissipation
Soldering Temperature (10 s)
Storage Temperature
Operating Temperature
VALUE
0.6 to 4.6
0.6 to 4.6
0.6 to VCC 0.3 (4.6 V)
0.3
260
55 to 125
-40 to 85
CAPACITANCE *(Ta 25°C, f 1 MHz)
SYMB0L
PARAMETER
CONDITION
CIN Input
VIN 0 V
COUT
Output
VOUT 0 V
* This parameter is periodically sampled and is not tested for every device.
MIN

MAX
10
10
UNIT
V
V
V
W
°C
°C
°C
UNIT
pF
pF
3 2012-08-31C



No Preview Available !

TC58NVG0S3HBAI6
VALID BLOCKS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB Number of Valid Blocks
1004
1024
Blocks
NOTE:
The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
The first block (Block 0) is guaranteed to be a valid block at the time of shipment.
The specification for the minimum number of valid blocks is applicable over lifetime
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VCC
Power Supply Voltage
2.7 3.6 V
VIH High Level input Voltage
Vcc x 0.8
VCC 0.3
V
VIL Low Level Input Voltage
0.3*
Vcc x 0.2
* 2 V (pulse width lower than 20 ns)
DC CHARACTERISTICS (Ta -40 to 85, VCC 2.7 to 3.6V)
SYMBOL
PARAMETER
IIL
ILO
ICCO1
ICCO2
ICCO3
ICCS
Input Leakage Current
Output Leakage Current
Serial Read Current
Programming Current
Erasing Current
Standby Current
CONDITION
VIN 0 V to VCC
VOUT 0 V to VCC
CE VIL, IOUT 0 mA, tcycle 25 ns
CE VCC 0.2 V, WP 0 V/VCC
MIN

TYP.

MAX
10
10
30
30
30
50
V
UNIT
A
A
mA
mA
mA
A
VOH
High Level Output Voltage IOH  0.1 mA
Vcc – 0.2
V
VOL Low Level Output Voltage IOL 0.1 mA
IOL
( RY /BY )
Output current of RY /BY
pin
VOL 0.2 V
  0.2 V
4 mA
4 2012-08-31C



TC58NVG0S3HBAI6 datasheet pdf
Download PDF
TC58NVG0S3HBAI6 pdf
View PDF for Mobile


Related : Start with TC58NVG0S3HBAI Part Numbers by
TC58NVG0S3HBAI4 1G BIT (128M x 8-BIT) CMOS NAND E2PROM TC58NVG0S3HBAI4
Toshiba
TC58NVG0S3HBAI4 pdf
TC58NVG0S3HBAI6 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM TC58NVG0S3HBAI6
Toshiba
TC58NVG0S3HBAI6 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact