TC58DVM92A5TA00 Datasheet PDF - Toshiba

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TC58DVM92A5TA00
Toshiba

Part Number TC58DVM92A5TA00
Description 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM
Page 30 Pages


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TC58DVM92A5TA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M × 8 BITS) CMOS NAND E2PROM
DESCRIPTION
The device is a single 3.3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only
Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static
register which allows program and read data to be transferred between the register and the memory cell array in
528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes ×
32 pages).
The device is a serial-type memory device which utilizes the I/O pins for both address and data input/output as
well as for command inputs. The Erase and Program operations are automatically executed making the device most
suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and
other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
Memory cell allay 528 × 128K × 8
Register
528 × 8
Page size
528 bytes
Block size
(16K + 512) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read
Mode control
Serial input/output
Command control
Power supply
VCC = 2.7 V to 3.6 V
Access time
Cell array to register 25 μs max
Serial Read Cycle 40 ns min
Program/Erase time
Auto Page Program 300 μs/page typ.
Auto Block Erase 2.5 ms/block typ.
Operating current
Read (40 ns cycle)
Program (avg.)
Erase (avg.)
Standby
20 mA max.
20 mA max.
20 mA max.
50 μA max
Package
TSOPI48-P-1220-0.50 (Weight: 0.53g typ.)
1 2010-07-13



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PIN ASSIGNMENT (TOP VIEW)
NC
NC
NC
NC
NC
NC
RY / BY
RE
CE
NC
NC
VCC
VSS
NC
NC
CLE
ALE
WE
WP
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 NC
47 NC
46 NC
45 NC
44 I/O8
43 I/O7
42 I/O6
41 I/O5
40 NC
39 NC
38 NC
37 VCC
36 VSS
35 NC
34 NC
33 NC
32 I/O4
31 I/O3
30 I/O2
29 I/O1
28 NC
27 NC
26 NC
25 NC
PIN NAMES
I/O1 to I/O8
CE
WE
RE
CLE
ALE
WP
RY/BY
VCC
VSS
NC
I/O port
Chip enable
Write enable
Read enable
Command latch enable
Address latch enable
Write protect
Ready/Busy
Power supply
Ground
No connection
TC58DVM92A5TA00
2 2010-07-13



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BLOCK DIAGRAM
I/O1
to
I/O8
CE
CLE
ALE
WE
RE
WP
RY/BY
I/O Control circuit
Logic control
RY/BY
Status register
Address register
Command register
Control
TC58DVM92A5TA00
VCC VSS
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC
VIN
VI/O
PD
Tsolder
Tstg
Topr
Power Supply Voltage
Input Voltage
Input/Output Voltage
Power Dissipation
Soldering Temperature (10s)
Storage Temperature
Operating Temperature
VALUE
0.6 to 4.6
0.6 to 4.6
0.6 V to VCC + 0.3 V (4.6 V)
0.3
260
55 to 125
0 to 70
CAPACITANCE *(Ta = 25°C, f = 1 MHz)
SYMB0L
PARAMETER
CONDITION
CIN Input
VIN = 0 V
COUT
Output
VOUT = 0 V
* This parameter is periodically sampled and is not tested for every device.
MIN
MAX
10
10
UNIT
V
V
V
W
°C
°C
°C
UNIT
pF
pF
3 2010-07-13



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VALID BLOCKS (1)
TC58DVM92A5TA00
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB Number of Valid Blocks
4016
4096
Blocks
(1) The device occasionally contains unusable blocks. Refer to Application Note (14) toward the end of this document.
(2) The first block (block address #00) is guaranteed to be a valid block at the time of shipment.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC Power Supply Voltage
VIH High Level input Voltage
VIL Low Level Input Voltage
* 2 V (pulse width lower than 20 ns)
MIN
2.7
VCC × 0.78
0.3*
TYP.
MAX
3.6
VCC + 0.3
VCC × 0.22
UNIT
V
V
V
DC CHARACTERISTICS (Ta = 0° to 70°C, VCC = 2.7 V to 3.6 V)
SYMBOL
PARAMETER
CONDITION
IIL
Input Leakage Current
VIN = 0 V to VCC
ILO
ICCO1
Output Leakage Current
VOUT = 0 V to VCC
Operating Current (Serial Read) CE = VIL, IOUT = 0 mA, tcycle = 40 ns
ICCO3
Operating Current
(Command Input)
tcycle = 40 ns
ICCO4
Operating Current (Data Input) tcycle = 40 ns
ICCO5
Operating Current
(Address Input)
tcycle = 40 ns
ICCO7
Programming Current
ICCO8
ICCS
Erasing Current
Standby Current
CE = VCC 0.2 V, WP = 0 V/VCC
VOH
High Level Output Voltage
IOH = −400 μA
VOL Low Level Output Voltage
IOL ( RY/BY ) Output Current of RY/BY pin
IOL = 2.1 mA
VOL = 0.4 V
MIN
2.4
TYP.
8
MAX
±10
±10
20
20
20
20
20
20
50
0.4
UNIT
μA
μA
mA
mA
mA
mA
mA
mA
μA
V
V
mA
4 2010-07-13



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Toshiba
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