TC55257BPL Datasheet PDF - Toshiba Semiconductor

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TC55257BPL
Toshiba Semiconductor

Part Number TC55257BPL
Description SILICON GATE CMOS STATIC RAM
Page 7 Pages


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TOSHIBA
TC55257BPL/BFL/BSPL/BFIL/BIRL-85/10
SILICON GATE CMOS
32,768 WORD x 8 BIT STATIC RAM
Description
The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a
single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of
5mNMHz fup.) and a minimum cycle time of 85ns.
When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 10Q.lA. The
TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output
enable input (OE) provides fast memory access. The TC55257BPL is suitable for use in microprocessor systems where high
speed, low power, and battery backup are required.
The TC55257BPL is offered in a standard dual-in-line 28-pin plastic package (0.6/0.3 inch width), a small outline plastic pack-
age, and a thin small outline plastic package (forward type, reverse type).
Features
• Low power dissipation:
• Standby current:
• Single 5V power supply
• Access time (max.)
Access Time
Chip Enable
Access Time
Output Enable Time
27.5mW/MHz (typ.)
100fJA (max.)
TC55257BPL/BFl/BSPL/BFTl/BTRl
-85 ·10
85ns
100ns
85ns
100ns
45ns
50ns
• Power down feature:
CE
• Data retention supply voltage:
2.0 - 5.5V
• Inputs and outputs TIL compatible
• Package
TC55257BPL: DIP28-P-600
Pin Names
TC55257BFL
TC55257BSPL
TC55257BFTL
TC55257BTRL
: SOP28-P-450
: DIP28-P-300B
: TSOP28-P
: TSOP28-P-A
Pin Connection (Top View)
o 28 PIN DIP & SOP 0 28 PIN TSOP
A14
A12
A2
Al
AO
1/01
1/02
1/03
GNO
10
11
12
13
14
Voo
PJW
All
AS
A9
~1
OE
21 ~O
20 CE
19 1108
18 1107
17 1106
16 1/05
15 1/04
(forward type)
28
(reverse type)
1~
28 l'
AO - A14
RIW
OE
CE
1/01 - 1/08
Voo
GND
Address Inputs
ReadlWrite Control Input
Output Enable Input
Chip Enable Input
Data Input/Output
Power (+5V)
Ground
PIN NO.
1 2 3 4 5 6 7 8 9 10 11 12 13 14
PIN NAME OE A11 Ag As A13 RIW Voo A14 A12 A7 A6 A5 A4 A3
PIN NO.
15 16 17 18 19 20 21 22 23 24 25 26 27 28
PIN NAME
A2
A1
Ao 1/01 1/02 1/03 GND 1/04 1/05 1/06 1/07 1/08 CE AlO
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
A-1



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TC55257BPLlBFLlBSPLlBFTLlBTRL-85/10
Static RAM
Block Diagram
~ --L~.··I .AS
AS
O._....o------+-~-:+:~~-~tC.:C:O2\I:t ::
~---------------------~
'"
:: III: .....,...
A7
~ III: I- III: \AI
I
MEMORY CELL
= 8AA89.._...
A11_
0 \It
:i:
0-
4("
=- 2AAA11l4l2..o.-..--+-ClI-C:_::2_:~t
\AI
III:
_
00 NI
_I
ARRAY
4( V 1ftI
St2x32 x 16
I
-:t
__
\0AI
__
_I
'
_~~
(262144)
___~__
_
~
_~~l.··
~ 1: 3l ,1
II 01 ~"-~o-_..-.----~-~O
Oo-1.....~r-----t ;
_ ~A
o
SENSE AMP.
COLUMN ADDRESS
DECODER
I-
J ~.
-o-~~~_~v
o-:++++......-~ :!
o-++++-fo-t......~ 4(
~III:
),C II:
~-r-I--------r-I-
t--COLUMN ADDRESS
REGISTER
~
1/08.....
~- ~H #~h~~~ r0 v IoU
I I 1 1 'I 1 1 1
J J ~ J J J CE
AO A 1. A2 A3 A4A 10
~Voo
~GND
--R/W
___Qio--~=-3~'~--1-'-"----------------------------------------------~
~--o---~----~ ~----- CE
Operating Mode
~MODE
' CE OE R/W 1/01 -1/08 POWER
Read
Write
Output Deselect
Standby
L
L
H
DOUT
1000
L * L DIN 1000
L
H
H
High-Z
1000
H*
*
High-Z
loos
* H orL
Maximum Ratings
SYMBOL
ITEM
RATING
Voo Power Supply Voltage
VIN .Input Voltage
VI/O Input and Output Voltage
Po Power Dissipation
TSOLOER Soldering Temperature· Time
TSTRG Storage Temperature
TOPR Operating Temperature
-0.3 - 7.0
-0.3* - 7.0
-0.5* - Voo + 0.5
1.0/0.8/0.6**
260·10
-55 - 150
0-70
• -3.0V with a pulse width of 50ns
** Package dependent: 0.6 inch 1,OW, 0,3 inch 0.8W, 0.45 inch 0.6W
UNIT
V
V
V
W
°C· sec
°C
°C
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Static RAM
TC55257BPLlBFLlBSPLlBFTLlBTRL..85/10
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Voo Power Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
VOH Data Retention Supply Voltage
- -3.0V with a pulse width of 50ns
MIN. TYP. MAX. UNIT
4.5 5.0
5.5
2.2 - Voo + 0.3
-0.3* - 0.8 V
2.0 -
5.5
DC Characteristics (Ta = 0 - 70"C, Voo = 5V±10%)
SYMBOL
PARAMETER
III Input Leakage Current
ILO Output Leakage Current
IOH Output High Current
IOL Output Low Current
10001
Operating Current
10002
100S1
100S2
Standby Current
TEST CONDITION
MIN. TYP. MAX. UNIT
VIN = 0 - Voo
CE = VIH or RIW = VIL or DE = VIH
VOUT= 0 - Voo
VOH = 2.4V
- - ±1.0 ~
- - ±1.0 ~
-1.0 -
- rnA
VOL = O.4V
4.0 -
- rnA
CE = VIL
R1W=VIH
Other Input = VIHNIL
lOUT = OrnA
!cycle = 1j.1S
tcycle = Min. cycle
-
-
10 -
- 70
CE=0.2V
RIW = Voo - 0.2V
tcycle = 1j.1S
- 5 - rnA
Other Input
= VOO - 0.2V/0.2V tcycle = Min. cycle
-
-
60
lOUT = OrnA
cr = VIH
- - 3 rnA
CE = Voo - 0.2V
Voo = 2.0V - 5.5V
Ta = 0 - 70°C
Ta = 25°C
- - 100
- 2 -~
Capacitance* (Ta = 25°C, f = 1MHz)
SYMBOL
PARAMETER
TEST CONDITION
CIN Input Capacitance
COUT Output Capacitance
VIN =GND
VOUT= GND
-This parameter is periodically sampled and is not 100% tested.
MAX.
10
10
UNIT
pF
TOSHIBA AMERICA ELECTRONIC COMPDNENTS, INC.
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TC55257BPLlBFL/BSPL/BFTLlBTRL-85/10
Static RAM
AC Characteristics (Ta = 0 .... 70°C, Voo = 5V±10% )
Read Cycle
SYMBOL
PARAMETER
tRC
tACC
tco
tOE
tCOE
tOEE
too
tooo
tOH
Read Cycle Time
Address Access Time
CE Access Time
Output Enable to Output in Valid
Chip Enable (CE) to Output in Low-Z
Output Enable to Output in Low-Z
Chip Enable (CE) to Output in High-Z
Output Enable to Output in High-Z
Output Data Hold Time
TC55257BPL/BFL/BSPL/BFTL/BTRL
-85 -10
MIN. MAX. MIN. MAX.
85 - 100 -
- 85 - 100
- 85 - 100
- 45 - 50
10 -
10 -
5-
5-
- 30 - 50
-- 30
40
10 -
10 -
UNIT
ns
Write Cycle
SYMBOL
PARAMETER
twc
twp
tcw
tAS
tWR
toow
tOEW
tos
tOH
Write Cycle Time
Write Pulse Width
Chip Selection to End of Write
Address Setup Time
Write Recovery Time
R/W to Output in High-Z
RIW to Output in Low-Z
Data Setup Time
Data Hold Time
AC Test Conditions
Input Pulse Levels
Input Pulse Rise and Fall Time
Input liming Measurement Reference Levels
Output Timing Measurement Reference Levels
Output Load
TC55257BPL/BFL/BSPL/BFTL/BTRL
-85 -10
MIN. MAX. MIN. MAX.
85 - 100 -
60 -
70 -
65 - 90 -
0-
0-
5-
5-
- 30 - 50
5-
5-
40 -
40 -
0-
0-
UNIT
ns
2.4V/O.6V
5ns
2.2V/O.8V
2.2V/O.8V
1 TTL Gate and CL = 100pF
A-4
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.



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