TC51V8512AF-12 Datasheet PDF - Toshiba

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TC51V8512AF-12
Toshiba

Part Number TC51V8512AF-12
Description SILICON GATE CMOS PSEUDO STATIC RAM
Page 9 Pages


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rOSHIBA
SILICON GATE CMOS
TC51V8512AF/ AFT/ A1R-12/15
PRELIMINARY
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF
utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power
storage. The TC51 V8512AF operates from a single 3.0V power supply. Refreshing is supported by a refresh (OEIRFSH) input which
enables two types of refreshing - auto refresh and self refresh. The TC51V8512AF features a static RAM-like interface with a write
cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface.
The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type,
reverse type).
Features
• Organization: 524,288 words x 8 bits
• Low voltage function: 3.0V±10%
• Data retention supply voltage: 2.0V - 3.3V
• Fast access time
TC51V8512AF Family
tCEA CE Access Time
tOEA OE Access Time
tRC Cycle Time
Power Dissipation
Self Refresh Current
1 3.0V
-12 -15
120ns
150ns
60ns
80ns
190ns
230ns
99mW
66mW
40llA
• Auto refresh is supported by an internal refresh address
counter
• Self refresh is supported by an internal timer
• Inputs and outputs TIL compatible
• Refresh: 2048 refresh cycles/32ms
• Package
- TC51V8512AF: SOP32-P-525
- TC51V8512AFT: TSOP32-P-400
- TC518V512ATR: TSOP32-P-400A
AIS
Al6
A14
Al2
A7
A6
AS
A4
A3
A2
Al
AO
1/01
1/02
1/03
GND
Vao
AI5
AI7
Rf'N
Al3
AS
A9
All
()tJmH
AtO
ct
1108
1/07
1106
1/05
1/04
AIS
Al6
AI4
Al2
A7
A6
AS
A4
A3
A2
Al
AO
1/01
1102
1103
GND
Pin Names
AO - A18
RIW
OE/RFSH
CE
1101 - 1/08
Voo
GND
Address Inputs
Read/Write Control Input
Output Enable Input
Refresh Input
Chip Enable Input
Data InputslOutputs
Power
Ground
TDSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
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TC51 V8512AFIAFTIATR-12/15
Static RAM
Block Diagram
voo GND
8 COLUMN
DECODER
MEMORY
ARRAY
2048 x 256 x8
,cc
0
0
"-
R/Wo---<r
Operating Mode
MODE
Read
Write
cr only Refresh
Auto/Self Refresh
Standby
CE
DEI
RFSH
R/W AD NA18 1/01- 8
.L L H
V' OUT
L L V' IN
L H H V' HZ
.. ..H L
HZ
HH
HZ
H = High level input (VIH)
L =Low level input (VIU
• = VIH orVIL
= At the falling edge of CE, all address inputs are latched. At all other times, the address inputs are "'''.
HZ =High impedance
Maximum Ratings
SYMBOL
ITEM
VIN Input Voltage
VOUT Output Voltage
Voo Power Supply Voltage
TOPR Operating Temperature
TSTRG Storage Temperature
TSOLDER Soldering Temperature· Time
Po Power Dissipation
lOUT Short Circuit Output Current
RATING
-1.0 -7.0
-1.0 -7.0
-1.0 -7.0
0-70
-55 - 150
260·10
600
50
UNIT NOTES
V
V
V
°C
°C
°C· sec
mW
rnA
1
0-206
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
PRELIMINARY



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Static RAM
TC51 V8512AF/AFT/ATR·12/15
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Voo Power Supply Voltage
V1H Input High Voltage
Vil Input Low Voltage
MIN. TYP. MAX. UNIT NOTES
2.7 3.0
3.3
V
2.1 - Voo + 0.5 V
-0.5 - 0.7 V
2
DC Characteristics (Ta = 0 - 700C, Voo = 3V±10%)
SYMBOL
PARAMETER
1000
100S1
100S2
100F1
100F2
100F3
IOOF4
II(l)
10(l)
VOH
VOL
Operating Current (Average)
eE, Address cycling: tRC = tRC min.
120ns version
150ns version
Standby Current
eE = VIH, QE/RFSH = VIH
Standby Current
eE = Voo - 0.2V, QE/RFSH = Voo - 0.2V
Self Refresh Current (Average)
eE = VIH, QE/RFSH = Vil
Self Refresh Current (Average)
eE = Voo - 0.2V, QE/RFSR = 0.2V
Auto Refresh Current (Average)
OE/RFSH cycling: tFC = tFC min.
120ns version
150ns version
eE only Refresh Current (Average)
eE, Address cycling: tRC = tRC min.
120ns version
150ns version
Input Leakage Current
OV:5,; VIN :5,; Voo, All other Inputs not under test = OV
Output Leakage Current
Output Disabled (eE = VIH or OE/RFSH = VIH or RIW = VILl,
OV:5,; Vour :5,; Voo
Output High Level
10H = -100~
Output Low Level
10l= 100~
MIN. TYP. MAX. UNIT NOTES
- 20 30
-
mA 3,4
15 20
- - 0.5 mA
- - 40 ~
- - 0.5 mA
- - 40 ~
- 20 30
-
mA 3
15 20
- 20 30
-
mA 3
15 20
- - ±10 ~
- - ±10 ~
Voo - 0.2 - - V
- - 0.2 V
Capacitance* (Voo = 3V, Ta = 25°C, f = 1MHz)
SYMBOL
PARAMETER
MIN.
CI1 Input Capacitance (AD - A18)
CI2 Input Capacitance (eE, QE/RFSH, RIW)
CIO Input/Output Capacitance
-
-
-
*This parameter is periodically sampled and is not 100% tested.
MAX.
5
7
7
UNIT
pF
PRELIMINARY
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
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TC51V8512AF/AFT/ATR·12/15
Static RAM
AC Characteristics (Ta = 0 - 70°C, VDD = 3V±10%) (Notes: 5, 6,7)
SYMBOL
PARAMETER
-120
MIN. MAX.
-150
MIN. MAX.
tRC
tRMW
tCE
tp
tl""'''
tOEA
tClZ
tOlZ
tWlZ
tCHZ
tOHZ
tWHZ
tosc
tOHC
tRCS
tRCH
twp
tWCH
tCWl
tosw
tosc
tOHW
tOHc
tAsc
tAHC
tFC
tRFO
tFAP
tFP
tFAS
t FRS
tREF
tT
Random Read, Write Cycle Time
Read Modify Write Cycle Time
CE Pulse Width
CE Precharge Time
r.F A~~A~~ Time
~
OE Access Time
CE to Output in Low -Z
OE to Output in Low -Z
Output Active from End of Write
Chip Disable to Output in High-Z
OE Disable to Output in High-Z
Write Enable to Output in High-Z
OE Setup Time Referenced to CE
OE Hold Time Referenced to CE
Read Command Setup Time
Read Command Hold Time
Write Pulse Width
Write Command Hold Time
Write Command to CE Lead Time
Data Setup Time from RIW
Data Setup Time from CE
Data Hold Time from RIW
Data Hold Time from CE
Address Setup Time
Address Hold Time
Auto Refresh Cycle Time
RFSH Delay Time from CE
RFSH Pulse Width (Auto Refresh)
RFSH Precharge Time
RFSH Pulse Width (Self Refresh)
CE Delay Time from RFSH (Self Refresh)
Refresh Period (2048 cycles, AO - A10)
Transition Time (Rise and Fall)
190 -
230
250 \" -
290
120 10,Qoa 150
70 - ", 80
120
- "'_60 f
20 -
0-
5-
0 30
-
20
a
5
a
0 30 0
0 30 a
0- a
15 -
15
0- a
0- a
35 -
35
70 -
35 -
70
35
30 -
30
30 -
30
0-a
0- a
0- a
25 -
190 -
25
230
70 - 80
80 8,000 80
40 -
40
8,000 - 8,000
250 -
300
- 32 -
3 50 3
-
-
10,000
-
150
80
-
-
-
30
30
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8,000
-
-
-
32
50
UNIT NOTES
~
~
r---
r---
~
r---
r---
~
r---
8
r---
8
~
8
r---
8
r---
8
~
r---
ns
r---
~
~
r---
9
~
9
~
9
-
9
~
10
-
10
r---
-
'---
11
~
11
'---
- 11
11
ms
ns
D,.208
TOSHIBA AMERICA ELECTRDNICCDMPDNENTS, INC.
PRELIMINARY



TC51V8512AF-12 datasheet pdf
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