TC518512FTL-70 Datasheet PDF - Toshiba

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TC518512FTL-70
Toshiba

Part Number TC518512FTL-70
Description SILICON GATE CMOS PSEUDO STATIC RAM
Page 8 Pages


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TOSHIBA
TC518512PL/FL/FIL/TRL-70/00/10
SILICON GATE CMOS
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes
a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!:!!gh speed and low power storage. The
TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two
types of refreshing - auto refresh and self refresh. The TC518512PL features a static RAM-like interface with a write cycle in which
the input data is written into the memory cell at the rising edge of RIVI/ thus simplifying the microprocessor interface.
The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline
package (forward type, reverse type).
Features
• Organization: 524,288 words x 8 bits
• Single 5V power supply
• Fast access time
TC518512PL Family
tCEA IT Access Time
tOEA O'E' Access Time
tRC Cycle Time
Power Dissipation
Self Refresh Current
-70
70ns
30ns
115ns
385mW
-80
80ns
30ns
130ns
330mW
200fJA
-10
100ns
40ns
160ns
275mW
• Auto refresh is supported by an internal refresh address
counter
• Self refresh is supported by an internal timer
• Inputs and outputs TIL compatible
• Refresh: 2048 refresh cycles/32ms
• Package
- TC518512PL: DIP32-P-600
- TC518512FL: SOP32-P-525
- TC518512FTL: TSOP32-P-400
- TC518512TRL: TSOP32-P-400A
Pin Names
AO - A18
RIW
O'E'iliFSH
CE
1/01 - 1/08
Voo
GND
Address Inputs
ReadlWrite Control Input
Output Enable Input
Refresh Input
Chip Enable Input
Data Inputs/Outputs
Power
Ground
AI8
AI6
A14
Al2
A7
A6
AS
A4
A3
A2
Al
AO
1/01
1/02
1/03
GND
Voo
AIS
Al7
R/W
Al3
A8
A9
All
mimH
AaIO
1/08
V07
1/06
1/05
1/04
Al8
A16
Al4
Al2
A,7
A6
AS
A4
A3
A2
Al
AO
1/01
1/02
1/03
GNO
TOSHIBA AMERICA ELECTRONIC CDMPDNENTS, INC.
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TC518512PL/FL/FTLlTRL-70/80/10
Block Diagram
Voo
Static RAM
MEMORY
ARRAY
2048 x 256 x8
cc
o
"
o
"
RNV O---<l~
Operating Mode
"":":""
;~NMODE
Read
Write
IT only Refresh
_.",
Auto/Self Refresh
Standby
CE
L
L
L
H
H
OEI
RFSH
L
*
H
L
H
R/W AD -A18 1/01 - 8
H V* OUT
L V* IN
H V* HZ
* * HZ
* * HZ
H = High level input (VIH)
I Low level input (VIU
VII~ orV1L
V' ,At the falling edge of CE, all address inputs are latched. At all other times, the address inputs are "*".
HZ -" High impedance
Maximum Ratings
SYMBOL
ITEM
VIN Input Voltage
VOUT Output Voltage
Voo Power Supply Voltage
TOPR Operating Temperature
TSTRG Storage Temperature
I-
TSOLOER Soldering Temperature· Time
P-- ... D
lOUT
Power Dissipation
Short Circuit Output Current
RATING
-1.0 -7.0
-1.0-7.0
-1.0-7.0
0-70
-55 - 150
260·10
600
50
UNIT
V
V
V
°C
°C
°C· sec
mW
rnA
NOTES
1
0-160
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Static RAM
TC518512PL.lFLlFTLITRL-70/80/10
DC Recommended Operating Conditions
SYMBOL
PARAMETER
VDO Power Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
MIN. TYP. MAX. UNIT NOTES
4.5 5.0
5.5
V
2.4 - VDD + 1.0 V
-1.0 - O.B V
2
DC Characteristics (Ta = 0 - 70°C, Voo = 5V±10%)
SYMBOL
PARAMETER
1000
IODS1
IODS2
IODF1
IODF2
IODF3
IODF4
II(L)
IO(L)
VOH
VOL
Operating Current (Average)
cr, Address cycling: tRC = tRC min.
70ns version
BOns version
1OOns version
Standby Current
cr = VIH , OE/R1~'SR = VIH
Standby Current
cr = Voo - 0.2V, OEil1FSR = VDO - 0.2V
Self Refresh Current (Average)
cr = VIH, OE/'I1F'SR = VIL
Self Refresh Current (Average)
cr = Voo - 0.2V, 'OE/RF'SR = 0.2V
Auto Refresh Current (Average)
O'E/iiJ='SR cycling: tFC = tFC min.
70ns version
BOns version
1OOns version
cronly Refresh Current (Average)
cr, Address cycling: tRC = tRC min.
70ns version
BOns version
1OOns version
Input Leakage Current
OV ::; VIN ::; VDO, All other Inputs not under test = OV
Output Leakage Current
Output Disabled (cr = VIH or OE/'I1F'SR = VIH or RIW = Vld
OV::; VOUT ::; Voo
Output High Level
10H = -1.0mA
Output Low Level
10L= 2.1mA
MIN. TYP. MAX. UNIT NOTES
- 50 70
- 45 60 mA 3,4
- 35 50
- - 1 mA
- - 200 ~
- - 1 mA
- - 200 ~
- - 70
- - 60 mA 3
- - 50
- - 70
- - 60 mA 3
- - 50
- - ±10 ~
- - ±10 ~
2.4 - - V
- - 0.4 V
Capacitance* (Voo = 5V, Ta = 25°C, f = 1MHz)
SYMBOL
PARAMETER
CI1 Input Capacitance (AO - A1B)
CI2 Input Capacitance (cr, OE';'I1F'SR, R/W)
CIO Input/Output Capacitance
MIN.
-
-
-
-This parameter is periodically sampled and is not 100% tested.
MAX.
5
7
7
UNIT
pF
TDSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
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TC518512PLlFL/FTLlTRL-70/80/10
Static RAM
AC Characteristics (Ta = 0 - 700C, Voo = 5V±10%) (Notes: 5, 6,7,8)
SYMBOL
PARAMETER
-70
MIN. MAX.
-80
MIN. MAX.
tRC
tRMW
tCE
tp
tCEA
tOEA
tCLl
tOll
tWLl
tCHZ
tOHZ
tWHZ
losc
tOHC
tRCS
tRCH
twp
tWCH
tCWL
tosw
tosc
tOHW
tOHC
tASC
tAHC
tFC
tRFD
tFAP
tFP
tFAS
tFRS
tREF
tT
Random Read, Write Cycle Time
Read Modify Write Cycle Time
cr Pulse Width
cr Precharge Time
cr Access Time
~ Access Time
cr to Output in Low -Z
~ to Output in Low -Z
Output Active from End of Write
Chip Disable to Output in High-Z
~ Disable to Output in High-Z
Write Enable to Output in High-Z
cr~ Setup Time Referenced to
crOE Hold Time Referenced to
Read Command Setup Time
Read Command Hold Time
Write Pulse Width
Write Command Hold Time
crWrite Command to Lead Time
Data Setup Time from RIW
crData Setup Time from
Data Hold Time from RIW
crData Hold Time from
Address Setup Time
Address Hold Time
Auto Refresh Cycle Time
'RJ!SH Delay Time from cr
'RJ!SH Pulse Width (Auto Refresh)
'RJ!SH Precharge Time
'RJ!SH Pulse Width (Self Refresh)
cr Delay Time from "RJ=SR (Self Refresh)
Refresh Period (2048 cycles, AO - A10)
Transition Time (Rise and Fall)
115
165
70
35
-
-
20
0
0
0
0
0
10
0
0
0
25
40
25
20
20
0
0
0
15
130
40
30
30
8,000
160
-
3
-
-
10,000
-
70
30
-
-
-
20
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8,000
-
-
-
32
50
130
180
80
40
-
-
20
0
0
0
0
0
10
0
0
0
25
40
25
20
20
0
0
0
20
130
40
30
30
8,000
160
-
3
-
-
10,000
-
80
30
-
-
-
20
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8,000
-
-
-
32
50
-10
MIN.
160
220
100
50
-
-
20
0
0
0
0
0
10
0
0
0
30
50
30
25
25
0
0
0
25
160
50
30
30
8,000
190
-
3
MAX.
-
-
10,000
-
100
40
-
-
-
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8,000
-
-
-
32
50
UNIT NOTES
~
~
f-----
f-----
~
f-----
~
~
~
9
f-----
9
~
9
~
9
f-----
9
~
~
ns
-
-
-
~
10
-
10
-
10
-
10
-
- 11
- 11
-
-
- 12
- 12
12
-
12
ms
ns
D-162
TOSHIBA AMERICA ELECTRDNIC COMPONENTS, INC.



TC518512FTL-70 datasheet pdf
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